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TC59S1608 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TC59S1616AFT Abstract: TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 tc59s1608aft TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT Text: TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits and	Original	TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT	PDF
Untitled Abstract: No abstract text available Text: TC59S1608FT-12 1/2 IL11 * C-MOS 16 M (1,048,576x8x2)-BIT SYNCHRONOUS DYNAMIC RAM - TOP VIEW 17 1 VDD (+3.3 V) GND 44 DQ0 I/O 2 27 GNDQ 42 DQ1 I/O 4 26 25 41 DQ6 I/O VDDQ VDDQ (+3.3 V) (+3.3 V) DQ2 I/O 6 24 40 21 20 39 DQ5 I/O 7 GNDQ 19 GNDQ 38 DQ3 I/O 8	Original	TC59S1608FT-12 576x8x2 2048x512x8	PDF
tc59s1608 Abstract: No abstract text available Text: TOSHIBA TC59S1608FT-10/12 TC59S1604FT-10/12 1,048,576 WORD X 2 BANK X 8 BIT /2,097,152 WORD X 2 BANK X 4 BIT SYNCHRONOUS DRAM Description TC59S1608FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x2-banks x8-bits and TC59S1604FT organized as 2,097,152 words x2-banks x4-bits. Fully synchronous operations are referenced at the positive edges of	Original	TC59S1608FT-10/12 TC59S1604FT-10/12 TC59S1608FT 576-words TC59S1604FT TC59S1608FT, tc59s1608	PDF
toshiba a10 motherboard Abstract: P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies	Original	P54C-100/66 toshiba a10 motherboard P16R8 TC59S1608AFT-10 Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 MOTOROLA LSC	PDF
toshiba a10 motherboard Abstract: MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10 Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies	Original	P54C-100/66 toshiba a10 motherboard MOTOROLA LSC LSC motorola tc59s1608aft Toshiba Motherboard GAL16LV8D GAL16LV8D-3LJ MC952 P16R8 TC59S1608AFT-10	PDF
KM416S4030BT-G10 Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821 Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.	Original	PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821	PDF
Asus PC MOTHERBOARD CIRCUIT MANUAL Abstract: cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5 Text: A Guide to Building a PC with an AMD Athlon Processor TM Publication # 22914 Issue Date: September 1999 Rev: B 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or warranties with	Original	22914B/0--September Asus PC MOTHERBOARD CIRCUIT MANUAL cwt 235 atx FSP250-61gn acer motherboard jumper settings D4516821AG5 fsp300 Atx-1125b ATX 235 KEYTRONIC d4564163g5	PDF
hy57v16801 Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out Text: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.	Original	AN-156 200pin 4Mx72 A0-11 DQ0-72 hy57v16801 KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out	PDF
toshiba a10 motherboard Abstract: TC59S1608AFT-10 P16R8 AN-9001 sdram pentium GAL16LV8D GAL16LV8D-3LJ MC952 tc59s1608aft intel pentium microprocessor Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies	Original	P54C-100/66 P16R8' toshiba a10 motherboard TC59S1608AFT-10 P16R8 AN-9001 sdram pentium GAL16LV8D GAL16LV8D-3LJ MC952 tc59s1608aft intel pentium microprocessor	PDF
IBM025161LG5D60 Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.	Original	MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT	PDF
gm72v661641ct7j Abstract: motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF Text: Microstar MSI Motherboard Memory Recommendations December 15, 1999 Microstar Motherboard Recommended Memory List (Revised 08-06-99) Manufacturer Model Number (IC Part Number) Type Size Fujitsu (BUFFALO) 81F16822D-102LFN (ECC) SDRAM 32MB LGS (Apacer) GM72V661641CTJ7	Original	81F16822D-102LFN GM72V661641CTJ7 MT48LC4M16A2TG-8C D4516821AG5-A10-7JF KM48S2020CT-GH TMS626812BDGE5H-8 TC59S1608AFT-10 HM5264165TTB60 HM5264805TTB60 gm72v661641ct7j motherboard ic list d4564163g5 D4516821AG5 TC59S1608AFT-10 v54c365804vbt8pc GM72v66841ct7j D4564841g5 GM72V66841CT-7J D4564841G5-A10B-9JF	PDF
KM48S8030BT-GL Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5 Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.	Original	PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5	PDF
toshiba a10 motherboard Abstract: TC59S1608AFT-10 GAL16LV8D GAL16LV8D-3LJ MC952 P54C Text: Interfacing SDRAMs to Pentium Processors with 3.3V GAL Devices Introduction Design Implementation The blistering speed of today’s leading-edge microprocessors necessitates the use of new memory and logic technologies. To keep up with the operating frequencies	Original	P54C-100/66 P16R8' toshiba a10 motherboard TC59S1608AFT-10 GAL16LV8D GAL16LV8D-3LJ MC952 P54C	PDF
Untitled Abstract: No abstract text available Text: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt	OCR Scan	Q02SGÃ TC59S1604 TC59S1608 TC59S1604/1608	PDF

TC59S1604 Abstract: TC59S1608 Text: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t DESCRIPTION The T C 59S 1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E, CS,	OCR Scan	TC59S1604 TC59S1608 TC59S1608 TC59S1604,	PDF
TC59S1608AFT-10 Abstract: TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616 Text: ! TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits	OCR Scan	TC59S1616AFT-10, TC59S1608AFT-10, TC59S1604AFT-10, TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 10OM-words TC59S1608AFT-10 TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616	PDF
TC59S1616 Abstract: TC59S1616AFT TC59S1608AF Text: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM	OCR Scan	TC59S1616AFT-8 TC59S1608AFT-8 TC59S1604AFT-8 288-WORD 16-BIT 576-WORDx2 TC59S1616AFT, TC59S1608AFT TC59S1604AFT TC59S1616 TC59S1616AFT TC59S1608AF	PDF
THMY642051AEG10 Abstract: MY642051 14V aeg aeg t 133 Text: TOSHIBA THMY642051 AEG-10,-12A,-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY642051AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.	OCR Scan	THMY642051 AEG-10 THMY642051AEG TC59S1608AFT 484mW -10/12A) 208mW 80MAX. THMY642051AEG10 MY642051 14V aeg aeg t 133	PDF
THMY6420B1AEG Abstract: aeg tt THMY6420B1AEG10 Text: TOSHIBA TH MY6420B1 AEG-10,-12A,-12 TENTATIVE .TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 2,097,152 W O RD Sx 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6420B1AEG is a 2,097,152 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S1608AFT on the printed circuit board.	OCR Scan	MY6420B1 AEG-10 THMY6420B1AEG TC59S1608AFT 484mW -10/12A) 208mW THMY6420B1AEG-10 THMY6420B1AEG H1111111h1111in aeg tt THMY6420B1AEG10	PDF
THMY644041AEG10 Abstract: 99 0609 00 04 THMY644041AEG THMY644041 aeg t 133 aeg tt Text: TOSHIBA TH M Y644041A EG -10,-12A.-12 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304 W O R D S x 64 BITS SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644041AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled 16 pcs of TC59S1608AFT with Unbuffer on the printed circuit board.	OCR Scan	Y644041A THMY644041AEG TC59S1608AFT 100ns 120ns THMY644041AEG 54MIN. 25MAX. THMY644041AEG10 99 0609 00 04 THMY644041 aeg t 133 aeg tt	PDF
VG264265B Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D	OCR Scan	256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference	PDF
TC59R1809 Abstract: No abstract text available Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK	OCR Scan	18MBit TC59R0409VK TC59R1809VK TC85RT000VK SVP32 SVP42 TC59S1604FT/FTL-10 TC59S1604FT/FTL-12 C59S1608FT/FTL-10 TC59S1608FT/FTL-12 TC59R1809	PDF
Untitled Abstract: No abstract text available Text: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM	OCR Scan	TC59S1616AFT 288-words x16-bits TC59S1608AFT 576-words andTC59S1604FT 100M-words SD16010496 TC59S1616AFT, TC59S1608AFT,	PDF
THMY6440A1AEG10 Abstract: M8A010 D036 Text: T O S H IB A TH M Y 6440A 1A EG -10,-12A,-12 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 4,194,304 W O R D S x 64 BITS SY N CH RO N O U S D R A M M O D U LE DESCRIPTION The THMY6440A1AEG is a 4,194,304 words by 64 bits Synchronous DRAM module which assembled	OCR Scan	THMY6440A1AEG TC59S1608AFT 312mW 257mW 981mW THMY6440A1AEG-10 THMY6440A1AEG 54MIN. THMY6440A1AEG10 M8A010 D036	PDF

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TC59S1608 Search Results

TC59S1608 Price and Stock

Toshiba America Electronic Components TC59S1608AFT-10

TC59S1608 Datasheets Context Search

TC59S1616AFT

Untitled

tc59s1608

toshiba a10 motherboard

toshiba a10 motherboard

KM416S4030BT-G10

Asus PC MOTHERBOARD CIRCUIT MANUAL

hy57v16801

toshiba a10 motherboard

IBM025161LG5D60

gm72v661641ct7j

KM48S8030BT-GL

toshiba a10 motherboard

Untitled

TC59S1604

TC59S1608AFT-10

TC59S1616

THMY642051AEG10

THMY6420B1AEG

THMY644041AEG10

VG264265B

TC59R1809

Untitled

THMY6440A1AEG10