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    TC531000

    Abstract: 531000CP TC531000C
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC531000CP/CF-12,-15 1M BIT 128K W O R D x 8 BIT C O M S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 0 0 0 C P /C F is a 1, 048, 576 b its re a d only m em ory o rgan ized a s 131, 072 w ords b y 8 b its


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    PDF TC531000CP/CF-12 TC531000CP/CF 150ns A0-A16 A0-A15 TC531000 531000CP TC531000C

    TC531000

    Abstract: tc531000cp DIP23-P-60
    Text: iÂ^ÉftÂâfÂÂ WWWmmW0Wm 1M EIT 128K WORD x 3 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­


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    PDF TC531000CP/TC531000CF TC531000CP/CF 120ns 150ns TC531OOOCP/CF--12/15 DIP23-P-600) TC531000 tc531000cp DIP23-P-60

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC531000CP-12/15 TC531000CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS M ASK ROM Description The T C 5 3 1 0 0 0 C P / C F is a 1,048,576 bit read only m emory organized a s 131,072 w ords by 8 bits. A low bit cost m akes it suitable


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    PDF TC531000CP-12/15 TC531000CF-12/15 TC531OOOCP-12/15,

    ci 4070

    Abstract: Otis technology
    Text: m m m m mmsrnmimsm . 8ÄSI .„¡m R l P  IBi? f f ! ïi ll ll ll ll lÄiliiÄiÄÄliiftÄ m ß WÊS ijj|j| ISS«!11 g ¡Ssii itiWiii j&$RÌl$ÌÌÉ IM EIT (128K WORD x 3 BIT CMOS MA SK ROM S I LICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8


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    PDF TC531000CP/CF TC531000CP/CT' 120ns 150nsOutput TC531OOOCP/CF-12/15 DIP23-P-600) ci 4070 Otis technology

    TC531000cp

    Abstract: TC531000CF a2c8 DOC11
    Text: 1M EIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­ processor, especially character generator.


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    PDF TC531000CP/CF TC531000CP/CP 120ns 150ns TC531OOOCP-- TC531OOOCP TC531000cp TC531000CF a2c8 DOC11

    TC5816FT

    Abstract: TC5332410F TC5316200CP TC531621 TC5310
    Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12


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    PDF TC58F010P-10, 600mil 525mil TC58F010F-10, TC58F010FT10, TC58F010TR-10, TC58F010T-10, TC58F4000P-12, TC58F4000F-12, 450mi! TC5816FT TC5332410F TC5316200CP TC531621 TC5310