Untitled
Abstract: No abstract text available
Text: GM71V65163C GM71VS65163CL LG Semicon Co.,Ltd. 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP ¥± The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced
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GM71V65163C
GM71VS65163CL
GM71V
65163C/CL
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gm71vs65163al
Abstract: GM71V65163
Text: GM71V65163A GM71VS65163AL LG Semicon Co.,Ltd. 4,196,304 WORDS x 16 BIT CMOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP ¥± The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced
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GM71V65163A
GM71VS65163AL
GM71V
5163A/AL
gm71vs65163al
GM71V65163
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24C02
Abstract: No abstract text available
Text: HB56SW464DB-6BL/7BL 4,194,304-word x 64-bit High Density Dynamic RAM Module ADE-203-651 Z Preliminary Rev. 0.0 Sep. 12, 1996 Description The HB56SW464DB is a 4M × 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1 piece
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HB56SW464DB-6BL/7BL
304-word
64-bit
ADE-203-651
HB56SW464DB
16-Mbit
HM51W16405B)
24C02)
24C02
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Untitled
Abstract: No abstract text available
Text: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP-II The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V65163C
GM71VS65163CL
GM71V
65163C/CL
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Untitled
Abstract: No abstract text available
Text: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP ¥ ± The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V65163C
GM71VS65163CL
GM71V
65163C/CL
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Untitled
Abstract: No abstract text available
Text: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT MOS DYNAMIC RAM Description Pin Configuration 50 SOJ / TSOP-II The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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GM71V65163C
GM71VS65163CL
GM71V
65163C/CL
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65173HG
Abstract: No abstract text available
Text: HY51V S 65173HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref) and power consumption(Normal
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HY51V
65173HG/HGL
16Bit
64Mbit
100us.
400mil
50pin
65173HG
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Untitled
Abstract: No abstract text available
Text: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal
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HY51V
65163HG/HGL
16Bit
64Mbit
100us.
400mil
50pin
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VDR 20-100
Abstract: MWS5114 MWS5114D1 MWS5114D2 MWS5114D3 MWS5114D3X MWS5114E1 MWS5114E2 MWS5114E2X MWS5114E3
Text: MWS5114 TM 1024-Word x 4-Bit LSI Static RAM March 1997 Features as 2V Min • Fully Static Operation • All Inputs and Outputs Directly TTL Compatible • Industry Standard 1024 x 4 Pinout Same as Pinouts for 6514, 2114, 9114, and 4045 Types • Three-State Outputs
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MWS5114
1024-Word
200ns
250ns
300ns
MWS5114E3
MWS5114E2
MWS5114E2X
MWS5114E1
MWS5114D3
VDR 20-100
MWS5114
MWS5114D1
MWS5114D2
MWS5114D3
MWS5114D3X
MWS5114E1
MWS5114E2
MWS5114E2X
MWS5114E3
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Hitachi DSA00164
Abstract: No abstract text available
Text: HM5164165A Series HM5165165A Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh ADE-203-453B (Z) Rev. 2.0 Oct. 15, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word × 16-bit. They employ the most advanced CMOS technology for high performance and
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HM5164165A
HM5165165A
16-bit)
ADE-203-453B
304-word
16-bit.
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: HM5164165A Series HM5165165A Series 64M EDO DRAM 4-Mword x 16-bit 8k refresh/4k refresh ADE-203-453B (Z) Rev. 2.0 Oct. 15, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304word × 16-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM5164165A
HM5165165A
16-bit)
ADE-203-453B
304word
16-bit.
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29c51002
Abstract: V29C51002T V29C51002T-55T 55NS
Text: Approved Manufacturers 651-0048-WEB List for Web Parts REVISION HISTORY Description of Change Rev ECO# A E10849 Internal Release 12/15/99 Date Apvd By KAH B E12099 Release to web store, update datasheet. 10/21/02 KlS Previously sold as 100-0002. Approved Manufacturers:
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651-0048-WEB
E10849
E12099
29c51002
V29C51002T
V29C51002T-55T
55NS
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Untitled
Abstract: No abstract text available
Text: G M 71V 65163A G M 71V S65163A L 4,196,304 WORDS x 16 BIT LG S e m ïc o n Co., Ltd. w w .,f c .i w . CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced
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5163A
S65163A
GM71V
5163A/AL
GM71V65163A
GM71VS65163AL
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d4265165
Abstract: D4265165G 65A50
Text: DATA SHEET jU PD 42S 65165, 4265165 MOS INTEGRATED CIRCUIT 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¿PD42S65165, 4265165 are 4,194,304 w ords by 16 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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16-BIT,
uPD42S65165
uPD4265165
PD42S65165
50-pin
d4265165
D4265165G
65A50
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trw 1014
Abstract: No abstract text available
Text: GM71V65163C GM71VS65163CL 4,196,304 WORDS x 16 BIT LG Sem ïcon Co., Ltd. w w .,f c .i w . MOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced
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GM71V65163C
GM71VS65163CL
GM71V
65163C/CL
trw 1014
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SAS 251
Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Text: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD
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A225D
1310P
1524D
A273D
1818D
A274D
A4100D
A277D
TJAAI80)
A4510D
SAS 251
4580d
tda 2022
Tda 865
TDA 7650
CPA 7660
cmo 765
TAA 2761 A
TCA4510
TAA761A
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Untitled
Abstract: No abstract text available
Text: HY51 V S 65173H G (HG L) 4Mx16, 3.3V, 4KRef, EDO DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera
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65173H
4Mx16,
64Mbit
16bit
10Ous.
400mil
50pin
64M-bit
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Untitled
Abstract: No abstract text available
Text: GM71 V S 65163C(CL) 4Mx1B, 3.3V, 4K Ref, EDO Description Pin Configuration The GM71V(S)65163C/CL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163C/CL utilizes advanced CMOS Silicon Gate Process Technology as well as
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65163C
GM71V
65163C/CL
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uPD4265160
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD4264160
uPD4265160
16-BIT,
/iPD4264160
50-pin
/iPD4264160-A50
PD4265160-A50
/xPD4264160-A60
/jPD4265160-A60
juPD4264160-A70
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TEAC FC-1
Abstract: Dynamic RAM Controller 1M200 NMB Technologies 1MX1
Text: NMB S em iconductor A A A 1 M 2 0 0 Fast P ag e M o d e C M O S 1M X 1 D ynam ic R AM PIN CONFIGURATIONS FEATURES Max. RAS Access Time 60ns 1 o Parameter -06 ->l • 1,048,576 x 1 bit Organization ■ Single 5V ±10% Power Supply ■ Performance Ranges: 70ns
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AAA1M200
100ns
110ns
130ns
150ns
190ns
26pin
CA91311,
TEAC FC-1
Dynamic RAM Controller
1M200
NMB Technologies
1MX1
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K777
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page
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16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
42-pin
//PD42S16165L-A60,
4216165L-A60
PD42S16165L-A70,
4216165L-A70
K777
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 18 16 5 L, 4 2 18 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S18165L, 4218165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.
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16-BIT,
PD42S18165L,
4218165L
PD42S18165L
50-pin
42-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The /iPD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).
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uPD42S17405L
uPD4217405L
PD42S17405L
PD42S17405L,
4217405L
26-pin
/iPD42S17405L-A60,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page
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PD42S16165L,
4216165L
16-BIT,
nPD42S16165L,
16165Lare
juPD42S16165L
4216165L
k42752S
aDS74%
16165L,
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