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    BUZ11

    Abstract: TB334
    Text: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching


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    PDF BUZ11 TA9771. BUZ11 TB334

    TA9771

    Abstract: BUZ11 TB334
    Text: BUZ11 Semiconductor Data Sheet 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET October 1998 File Number 2253.1 Features • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.040Ω (BUZ11 field effect transistor designed for applications such as


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    PDF BUZ11 BUZ11 TA9771. TA9771 TB334

    BUZ11_NR4941

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet September 2013 N-Channel Power MOSFET 50V, 30A, 40 mΩ Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF BUZ11 TA9771. BUZ11 BUZ11_NR4941

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


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    PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original
    PDF BUZ11 O220AB

    TA9771

    Abstract: No abstract text available
    Text: BUZ11 Semiconductor Data Sheet June 1999 30A, 50 V, 0.040 Ohm, N-Channel Power MOSFET File Number 2253.2 Features • 30A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF BUZ11 TA9771. BUZ11 TA9771

    TA9771

    Abstract: buz11
    Text: intelai I BUZ11 Data S heet Ju n e 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET F ile N u m b e r 2253.2 Features • 30A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan
    PDF BUZ11 TA9771. BUZ11 TA9771