Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RFL1P10 Search Results

    RFL1P10 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFL1P10 Intersil 1A, -80V and -100V, 3.65 ?, P-Channel Power MOSFETs Original PDF
    RFL1P10 General Electric P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 1A. Scan PDF
    RFL1P10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1P10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFL1P10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFL1P10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RFL1P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    an7254

    Abstract: RFL1P10 RFL1P08
    Text: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original
    PDF RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260. RFL1P10 RFL1P08

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original
    PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    TA9401

    Abstract: 92CS-37586 RFL1P08 36485 3771 RFL1P10 RFP2P08 RFP2P10
    Text: Standard Power M O S F E T s - RFL1P08, RFL1P10, RFP2P08, RFP2P10 F ile N u m b e r 1535 Power MOS Field-Eifect Transistors TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, -80 V and -100 V


    OCR Scan
    PDF RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 92C3-37S9I 92CS-37710 TA9401 92CS-37586 36485 3771

    TA9401

    Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
    Text: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan
    PDF RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 PMP411A. 92CS-37569 TA9401 TA940

    Untitled

    Abstract: No abstract text available
    Text: RFL1P08, RFL1P10 HARRIS S E M I C O N D U C T O R 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan
    PDF RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260.

    rfl1p10

    Abstract: No abstract text available
    Text: m RFL1P08 RFL1P10 HARRIS P-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features • Package T 0 -2 0 5 A F 1 A, - 8 0 V a n d - 1 0 0 V BOTTOM VIEW • r D S O N - 3 . 6 5 Î Î • S O A is P o w e r -D is s ip a tio n L im ite d


    OCR Scan
    PDF RFL1P08 RFL1P10 fL1P08, FL1P10 92CSOT639 rfl1p10

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan
    PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan
    PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    bu245a

    Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
    Text: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00


    OCR Scan
    PDF 0QD5704 O-204 O-205 O-218 O-220 rfm4n40 rfm7n40 rfm12n40 rfh12n40 buz351 bu245a 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan
    PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40