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    RFP2P10 Search Results

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    RFP2P10 Price and Stock

    Rochester Electronics LLC RFP2P10

    P-CHANNEL POWER MOSFET
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    DigiKey RFP2P10 Bulk 592
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    • 1000 $0.51
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    Harris Semiconductor RFP2P10

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    Bristol Electronics RFP2P10 1,900
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    RFP2P10 49
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    Quest Components RFP2P10 1,520
    • 1 $1.54
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    • 100 $1.54
    • 1000 $0.616
    • 10000 $0.539
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    RFP2P10 3
    • 1 $2.044
    • 10 $1.6352
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    Rochester Electronics RFP2P10 11,516 1
    • 1 $0.4875
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    • 100 $0.4583
    • 1000 $0.4144
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    RFP2P10 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFP2P10 Intersil -2A, -80V and -100V, 3.500 ?, P-Channel Power MOSFETs Original PDF
    RFP2P10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP2P10 General Electric P-channel enhancement-mode power field-effect transistor. Drain-sourge voltage -100V. Drain current Rms continuous 2A. Scan PDF
    RFP2P10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP2P10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFP2P10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP2P10 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    RFP2P10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RFP2P10

    Abstract: RFP2P08 TB334
    Text: RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate • rDS ON = 3.500Ω File Number 2870.1 • -2A, -80V and -100V [ /Title power field effect transistors designed for applications such


    Original     		RFP2P08, RFP2P10 -100V, -100V TB334 RFP2P10 RFP2P08 TB334 PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 PDF

    TA9401

    Abstract: 92CS-37586 RFL1P08 36485 3771 RFL1P10 RFP2P08 RFP2P10
    Text: Standard Power M O S F E T s - RFL1P08, RFL1P10, RFP2P08, RFP2P10 F ile N u m b e r 1535 Power MOS Field-Eifect Transistors TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, -80 V and -100 V


    OCR Scan     		RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 92C3-37S9I 92CS-37710 TA9401 92CS-37586 36485 3771 PDF

    TA9401

    Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
    Text: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		RFL1P08, RFL1P10, RFP2P08, RFP2P10 RFL1P08 RFL1P10 RFP2P08 RFP2P10 PMP411A. 92CS-37569 TA9401 TA940 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFP2P08, RFP2P10 Semiconductor Data Sheet October 1998 -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs Features • -2 A ,-8 0 V and -1 0 0 V These are P-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		RFP2P08, RFP2P10 -100V, TB334 AN7254 AN7260. PDF

    rfp2p10

    Abstract: No abstract text available
    Text: g H A R R RFP2P08 RFP2P10 IS P-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Features Package T 0 -2 2 0 A B • -2 A , -8 0 V a n d -1 0 0 V TOP VIEW • r D S (O N = 3 -5 f i • S O A is P o w e r - D is s ip a tio n L im ite d


    OCR Scan     		RFP2P08 RFP2P10 RFP2P10 FP2P08, PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan     		2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240 PDF

    bu245a

    Abstract: 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15
    Text: THOnSON/ DISTRIBUTOR SflE D 0QD5704 41T TCSK P o w er M O S FE Ts RF and BUZ-Series Power MOSFETs — N-Channel continued P a cka g e M a x im u m R a tin g s BVq s s (V) Id s (A) r DS(O N) O HM S 400 4 7 12 4.5 5.5 3.0 2.6 11.5 1.50 0.75 0.38 1.50 1.00


    OCR Scan     		0QD5704 O-204 O-205 O-218 O-220 rfm4n40 rfm7n40 rfm12n40 rfh12n40 buz351 bu245a 2n6895 BU245 RFM12P10 RFP12P10 2N6897 to205 rfm3n RFP8P08 rfp10p15 PDF

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF