RFP70N06
Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω
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RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
O-247
O-220AB
O-263AB
175oC
TB334
RFP70N06
RFP70N06
AN9321
AN9322
RF1S70N06SM
RF1S70N06SM9A
RFG70N06
TB334
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
MIL-S-19500.
150oC
TA49007.
AN7254
AN7260
AN9321
AN9322
RFF70N06
RFG70N06
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet January 2002 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
RFF70N06
MIL-S-19500.
AN7254
AN7260
AN9321
AN9322
RFG70N06
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rfp70n06
Abstract: No abstract text available
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet Title FG7 06, P70 6, 1S7 06S bt A, V, 14 m, anwer OSTs utho eyrds ter- July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
rfp70n06
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RFP70N06
Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM
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RFG70N06,
RFP70N06,
RF1S70N06,
RF1S70N06SM
O-247
175oC
RF1S70N06
RFP70N06
F1S70N06
RF1S70N06SM
RFG70N06
RF1S70N06SM9A
AN7254
AN7260
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 Data Sheet March 1999 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET File Number 4073.2 Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives
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RFF70N06
RFF70N06
MIL-S-19500.
AN7254
AN7260
AN9321
AN9322
RFG70N06
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AN7254
Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Text: RFF70N06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V JEDEC TO-254AA • rDS ON = 0.025Ω GATE SOURCE • Temperature Compensating PSPICE Model
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RFF70N06
O-254AA
150oC
RFF70N06
AN7254
AN7260
AN9321
AN9322
RFG70N06
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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AN7254
Abstract: AN7260 AN9321 AN9322 RFK70N06
Text: RFK70N06 S E M I C O N D U C T O R 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET June 1997 Features Description • 70A, 60V The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
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RFK70N06
RFK70N06
1-800-4-HARRIS
AN7254
AN7260
AN9321
AN9322
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AN7254
Abstract: AN7260 AN9321 AN9322 RFK70N06
Text: RFK70N06 Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding
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RFK70N06
RFK70N06
175oC
AN7254
AN7260
AN9321
AN9322
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70n06 to 247
Abstract: RFP70N06 70n06
Text: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB
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RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
RF1S70N06SM
AN7260.
70n06 to 247
RFP70N06
70n06
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Untitled
Abstract: No abstract text available
Text: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits gives optimum
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RFF70N06
RFF70N06
0-025i2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: RFK70N06 Semiconductor 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET September 1998 Features Description • 70A,60V • 175°C Operating Temperature The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea
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RFK70N06
RFK70N06
TA49007.
05e-4
11e-5)
1e-30
46e-4
48e-7)
23e-3
56e-6)
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Untitled
Abstract: No abstract text available
Text: RFK70N06 HARRIS S E M I C O N D U C T O R 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET June 1997 Features Description • 70A, 60V The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI integrated circuits gives
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PDF
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RFK70N06
RFK70N06
TA49007.
1-800-4-HARRIS
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F1S70N06
Abstract: No abstract text available
Text: P *3 3 S RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili
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RFG70N06,
RFP70N06,
RF1S70N06,
RF1S70N06SM
014i2
05e-4
11e-5)
1e-30
46e-4
F1S70N06
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DS 25AT
Abstract: No abstract text available
Text: RFF70N06 P HHARRIS W S E M I C O N D U C T O R 25At, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET D e ce m b e r 1995 Features Package • 25A+, 60V JE D EC TO -254A A • rDS ON = 0.025i2 GATE • Temperature Compensating PSPICE Model
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RFF70N06
-254A
025i2
DS 25AT
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F1S70N06
Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
Text: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model
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RFG70N06,
RFP70N06,
RF1S70N06,
RF1S70N06SM
014i2
23e-3
29e-3
49e-7)
50e-7
84e-9
F1S70N06
70n06
1S70N06
FP70N
10i5
rfg70n06
rf1s70n
fp70n06
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RFP70N06
Abstract: TA49007 RFG70N06 fp70n06 70n06 4772 DIODE TC1501
Text: ill H R F G 70N 06 F P 7 0 N O fi a r r is S E M I C O N D U C T O R ^ N-Channel Enhancement-Mode Power Field-Effect Transistors August 1992 Features • Packages TO-22QAB TOP VIEW 70A,60V • r DS on = 0.014£2 • UIS Rating Curve (Single Pulse) DRAIN (FLANGE)
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O-22QAB
O-247
RFG70N06
RFP70N06
11e-12
91e-3
26e-3
07e-6
12e-9
18e-8)
TA49007
fp70n06
70n06
4772 DIODE
TC1501
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