Ta2N
Abstract: No abstract text available
Text: Vishay Electro-Films Thin Film Microwave Resistors MICROWAVE RESISTORS SIZE inches POWER VALUE RANGE PERFORMANCE KEY FILM 0.010 x 0.020 25 mW 20 Ω - 100 Ω Ta2N MIB.90 0.020 x 0.040 125 mW 25 Ω - 500 Ω Ta2N MIC.92
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06-Mar-07
Ta2N
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Untitled
Abstract: No abstract text available
Text: E/H Ta2N (Military M/D55342) www.vishay.com Vishay Dale Thin Film QPL MIL-PRF-55342 Qualified Ta2N Thin Film Resistor, Surface Mount Chip FEATURES Thin Film Mil chip resistors feature all sputtered wraparound termination for excellent adhesion and dimensional
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M/D55342)
MIL-PRF-55342
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: E/H Ta2N (Military M/D55342) www.vishay.com Vishay Dale Thin Film QPL MIL-PRF-55342 Qualified Ta2N Thin Film Resistor, Surface Mount Chip FEATURES Thin Film MIL chip resistors feature an all sputtered wraparound termination for excellent adhesion and dimensional uniformity. They are ideal in applications
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M/D55342)
MIL-PRF-55342
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Chip Attenuator 0.5 Watt DC to 18 GHz The content of this specification may change without notification 11/01/08 Features This flat type attenuator uses Ta2N for resistive elements ensuring high stability and excellent frequency performance. Dimensions 1.4
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TRK-7003
TRK-7006
TRK-7010
TRK-7020
949-453-98his
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Untitled
Abstract: No abstract text available
Text: Vishay Electro-Films Thin Film Chip Voltage Dividers SIZE inches VALUE VOLTAGE RATIO RANGE CHIP VOLTAGE DIVIDERS CHIP VOLTAGE DIVIDERS MULTIVALUE PERFORMANCE 0.058 x 0.058 25 kΩ TOTAL 1 - 20 FILM MODEL Ta2N ATA.119 Performance Key www.vishay.com
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07-Mar-07
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Untitled
Abstract: No abstract text available
Text: 【PR Series】 Anti-Corrosive Thin Film Precision Chip Resistor Anti-Corrosive Thin Film Precision Chip Resistor PR Series •Features － Long term life stability and demonstrated the Anti–Corrosion claims characterized by Ta2N －Special passivated NiCr film for Anti-Acid and Anti-Damp
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10ohm
300mm/minÂ
10-Apr-2013
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Untitled
Abstract: No abstract text available
Text: Vishay Electro-Films Thin Film Chip Resistor Arrays Wire Bondable SIZE inches VALUE RANGE DESCRIPTION CHIP RESISTORS ARRAYS PERFORMANCE FILM MODEL 0.060 x 0.090 50 Ω - 1 MΩ 8 RESISTORS ISOLATED Ta2N CLA.112 0.060 x 0.090 50 Ω - 1 MΩ 8 RESISTORS
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07-Mar-07
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Untitled
Abstract: No abstract text available
Text: Chip Attenuator 0.5 Watt DC to 18 GHz The content of this specification may change without notification 11/01/08 Features This flat type attenuator uses Ta2N for resistive elements ensuring high stability and excellent frequency performance. Application Coaxial Tube
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TRK-7003
TRK-7006
TRK-7010
TRK-7020
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Ta2N
Abstract: "beryllium oxide" 61051
Text: Substrate Thin Film Metalized Wafers Vishay Electro-Films Thin Film Metalized Plates METALIZED PLATES SIZE SUBSTRATE MATERIAL METALIZATION FILMS 2 to 4 INCHES ALUMINA NiCr, Cu, Ta2N Ni, TiW Pd, Al, Au 2 to 3 INCHES QUARTZ NiCr, Cu, Ta2N Ni, TiW Pd, Al, Au
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07-Mar-07
Ta2N
"beryllium oxide"
61051
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Untitled
Abstract: No abstract text available
Text: Chip Attenuator 0.5 Watt DC to 18 GHz Features This flat type attenuator uses Ta2N for resistive elements ensuring high stability and excellent frequency performance. Application Coaxial Tube Dimensions 1.4 5.48 0.5 2.85 6.3 Unit : mm Electrical Specifications
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TRK-7003
TRK-7006
TRK-7010
TRK-7020
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Untitled
Abstract: No abstract text available
Text: CHIP RESISTORS Vishay Electro-Films Thin Film Chip Resistors Wire Bondable Dual Value SIZE inches POWER VALUE RANGE ALUMINA DUAL VALUE TOP-CONTACT DUAL VALUE CHIP RESISTORS MODEL 0.030 x 0.030 125 mW 25 Ω - 35 kΩ Ta2N CTT 0.030 x 0.030 125 mW 50 Ω - 35 kΩ
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09-Mar-07
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Untitled
Abstract: No abstract text available
Text: MSFM www.vishay.com Vishay Electro-Films Thin Film, Top-Contact Miniature Resistor FEATURES • Wire bondable • Small size: 0.015" square • Case: 0101 • Wide value range: 2.5 to 400 k • DC power rating up to 125 mW • Self passivating tantalum nitride film
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: P Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd Pb-free • Low temperature coefficient down to 5 ppm/°C - 25 °C; + 85 °C
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MIL-PRF-55342G
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: P-NE Vishay Sfernice Precision Thin Film Chip Resistors FEATURES Low temperature coeffiecient down to ± 10ppm/°C Very low noise and voltage coefficient Laser trimmed tolerances to ± 0.01% In lot tracking < 5ppm/°C on request Termination: Thin film technology
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10ppm/
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: P Vishay Sfernice High Precision Wraparound Thin Film Chip Resistors FEATURES For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, VISHAY SFERNICE’s proven precision thin film
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MIL-PRF-55342G
10ppm/
55342G
MIL-Std-202
MIL-PRF-55342G
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Untitled
Abstract: No abstract text available
Text: P Vishay Sfernice High Precision Wraparound Thin Film Chip Resistors FEATURES For low noise and precision applications, superior stability, low temperature coefficient of resistance, and low voltage coefficient, VISHAY SFERNICE’s proven precision thin film
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MIL-PRF-55342G
10ppm/
55342G
MIL-Std-202
MIL-PRF-55342G
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film resistors 0505
Abstract: Ta2N RN005 rv0603
Text: Data sheet E 1/4.942 - 04598 RV CECC 40 401 010 for RV precision wraparound thin film chip resistors 0505 - 0603 0805 - 1206 – CECC qualified 45iV ● NICKEL BARRIER FOR HIGH TEMPERATURE OPERATING CONDITIONS ● TIGHT TCR < 10ppm/°C, and in lot tracking less than 5 ppm/°C for RV
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10ppm/
film resistors 0505
Ta2N
RN005
rv0603
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Untitled
Abstract: No abstract text available
Text: Resistor Network Time Stability Curves Vishay Electro-Films Resistor Network Time Stability Curves 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0.030 ABSOLUTE STABILITY OPERATING LIFE RATIO STABILITY OPERATING LIFE 0.025 1000 Hours = 0.0370 % Mean
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09-Mar-07
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schottky barrier diode b22
Abstract: g17g diode td15
Text: LVDS Interface ICs 56bit LVDS Transmitter 56:8 Serializer BU7988KVT ●Description LVDS Interface IC of ROHM "Serializer" "Deserializer" operate from 8MHz to 150MHz wide clock range, and number of bits range is from 35 to 70. Data is transmitted seven times 7X stream and reduce cable number
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56bit
BU7988KVT
150MHz
112MHz
224MHz)
TQFP100V
R1010A
schottky barrier diode b22
g17g
diode td15
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Ta2N
Abstract: No abstract text available
Text: MICROWAVE CHIP RESISTORS MECHANICAL AND ELECTRICAL DATA w WW SERIES LENGTH WIDTH THICKNESS OHMIC VALUE NiCr OHMIC VALUE Ta2N 110 112 115 118 119 120 121 122 124 .040" .050" .050" .021" .100'' .100" .100" .020" .150" .020" .050" .025" .017" .020" .050" .100"
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/SN62
110-10001F-0004
110-5ROQOK-0000
Ta2N
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Untitled
Abstract: No abstract text available
Text: MICROWAVE CHIP RESISTORS MECHANICAL AND ELECTRICAL DATA vW V SERIES LENGTH WIDTH THICKNESS OHMIC VALUE NiCr OHMIC VALUE Ta2N 110 112 115 118 119 120 121 122 124 .040" .050" .050" .021" .100" .100" .100" .020" .150" .020" .050" .025" .017" .020" .050" .100"
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50ppm
150ppm
-20dB
/SN62
110-10001F-0004
11O-5ROQOK-O0OO
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MTA2N60E
Abstract: mtp3n6
Text: MOTOROLA SC XSTRS/R 4b E F D • b3b?5S4 00 =13203 4 ■ NOTb O rder this data sheet by M TA2N60E/D MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA D esigner’s Data Sheet TA2N60E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand
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TA2N60E/D
MTA2N60E
221D-02
MTA2N60E
mtp3n6
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Untitled
Abstract: No abstract text available
Text: THIN FILM BACK CONTACT RESISTORS MSBC SERIES The M S B C series back contact chip resistor offers designers a space-saving design in a . 0 2 0 " x . 0 2 0 " size that requires only one wire bond. The chip backside provides the other contact with eutectic or conductive epoxy attachment to the
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125mW,
100ppm
MSBC-2-S-T-10K-01
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CBIC-U
Abstract: PU392A02 ALA210 NU231A01 NU362A02 NU431A01 PU432A01 PU693A02 pnp 8 transistor array npn 8 transistor array
Text: microelectronics Data Sheet May 1996 group Lucent T echnologies Bell Labs Innovations ALA210 UHF Semicustom Linear Array Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of vertical NPN and PNP
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ALA210
DS96-150BPF
DS92-120LBC)
CBIC-U
PU392A02
NU231A01
NU362A02
NU431A01
PU432A01
PU693A02
pnp 8 transistor array
npn 8 transistor array
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