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    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET

    FSJ264

    Abstract: MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
    Text: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ264D, FSJ264R 1-800-4-HARRIS FSJ264 MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1

    1E14

    Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3
    Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ260D, FSJ260R 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3

    la 4548

    Abstract: 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
    Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC264D, FSYC264R la 4548 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3

    FSj264

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R TM Data Sheet February 2001 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs File Number 4340.3 Features • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSJ264D, FSJ264R FSj264

    FSJ260

    Abstract: MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766
    Text: S E M I C O N D U C T O R FSJ260D, FSJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ260D, FSJ260R 1-800-4-HARRIS FSJ260 MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766

    2E12

    Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSJ160D, FSJ160R 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3

    FSJ160R3

    Abstract: 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad Hard in Fairchild for MOSFET
    Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSJ160D, FSJ160R FSJ160R3 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
    Text: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 33A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSJ264D, FSJ264R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. TA17668. 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4

    1E14

    Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1
    Text: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 44A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSJ260D, FSJ260R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ264D, FSJ264R 1-800-4-HARRIS

    2E12

    Abstract: FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad hard MOSFETS in Harris
    Text: S E M I C O N D U C T O R FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ160D, FSJ160R 1-800-4-HARRIS 2E12 FSJ160D FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 Rad hard MOSFETS in Harris

    smd diode 46A

    Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
    Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC260D, FSYC260R smd diode 46A 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd

    Untitled

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ264D, FSJ264R MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSJ264D, FSJ264R 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 46A, 200V, r[js ON = 0.050£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSYC260D, FSYC260R 36MeV/mg/cm2

    Untitled

    Abstract: No abstract text available
    Text: H A R R IS X FSJ160D, FSJ160R S em iconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ160D, FSJ160R MIL-S-19500

    POWER VDMOS

    Abstract: No abstract text available
    Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, Tqs ^o N = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSYC264D, FSYC264R FSYC264R POWER VDMOS

    19500 TRANSISTOR 50A

    Abstract: No abstract text available
    Text: HARRIS SENICONÏ SECTOR 5ÖE D fX H A R R I S • M3DSE71 DD457S7 BG3 « H A S 2N7299D, 2N7299R 2N7299H SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRK160 D, R, H) December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 50A, 100V, RD6(on) - 0.040Q


    OCR Scan     		PDF M3DSE71 DD457S7 2N7299D, 2N7299R FRK160 2N7299H i00KRAD 300KRAD 1000KRAD 3000KRAD 19500 TRANSISTOR 50A

    Untitled

    Abstract: No abstract text available
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSYC160D, FSYC160R FSYC160R

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    Untitled

    Abstract: No abstract text available
    Text: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSJ264D, FSJ264R MIL-STD-750, MIL-S-19500, 100ms; 500ms;