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    FSYC260R Search Results

    FSYC260R Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSYC260R Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC260R1 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC260R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC260R3 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC260R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC260R4 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC260D, FSYC260R

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.


    Original     		PDF FSYC260D, FSYC260R

    1E14

    Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
    Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC260D, FSYC260R 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET

    smd diode 46A

    Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
    Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC260D, FSYC260R smd diode 46A 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd

    1E14

    Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
    Text: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 46A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSYC260D, FSYC260R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 46A, 200V, r[js ON = 0.050£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSYC260D, FSYC260R 36MeV/mg/cm2

    Untitled

    Abstract: No abstract text available
    Text: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSYC260D, FSYC260R