IRF9630
Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
Text: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified
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IRF9630,
RF1S9630SM
TA17512.
TB334
IRF9630
O-220AB
O-263AB
IRF9630
RF1S9630
RF1S9630SM
RF1S9630SM9A
TB334
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IRFF9230
Abstract: No abstract text available
Text: IRFF9230 Data Sheet January 2002 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9230
-200V,
-200V
IRFF9230
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IRF9630
Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334
Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of
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IRF9630,
RF1S9630SM
TA17512.
IRF9630
5a,200v power diode
MOSFET IRF9630 Datasheet
RF1S9630
RF1S9630SM
RF1S9630SM9A
TB334
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irf9230
Abstract: IRF9231 IRF9232 IRF9233 TB334
Text: IRF9230, IRF9231, IRF9232, IRF9233 Semiconductor -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF9230,
IRF9231,
IRF9232,
IRF9233
-150V
-200V,
-200V
irf9230
IRF9231
IRF9232
IRF9233
TB334
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Untitled
Abstract: No abstract text available
Text: IRFF9230 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9230
-200V,
-200V
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IRF9230
Abstract: No abstract text available
Text: IRF9230, IRF9231, IRF9232, IRF9233 S E M I C O N D U C T O R -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon
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IRF9230,
IRF9231,
IRF9232,
IRF9233
-150V
-200V,
TA17512.
IRF9230
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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IRFF9230
Abstract: TA17512
Text: IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9230
-200V,
-200V
IRFF9230
TA17512
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irf9630
Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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Original
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IRF9630,
RF1S9630SM
TA17512.
irf9630
RF1S9630
RF1S9630SM
RF1S9630SM9A
TB334
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Untitled
Abstract: No abstract text available
Text: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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PDF
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IRF9630,
RF1S9630SM
-200V,
-200V
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Untitled
Abstract: No abstract text available
Text: H A R R IS sem iconductor IR F 9230, IR F 9231, IR F9232, IR F 9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs J a n u a ry 1998 Features Description • -5.5A a n d -6 .5 A ,-1 5 0 V a n d -2 0 0 V • High Input Impedance
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F9232,
-150V
-200V,
IRF9230,
IRF9231,
RF9232,
IRF9233
RF9231,
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irf9630
Abstract: IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633
Text: HARFRIS S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs May 1998 Description Features -5.5A and -6.5A, -150V and -200V Linear Transfer Characteristics
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OCR Scan
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PDF
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IRF9630,
IRF9631,
IRF9632,
IRF9633,
RF1S9630,
RF1S9630SM
-150V
-200V,
TA17512.
RF9630,
irf9630
IRF9631
IRF9632
RF1S9630
MOSFET IRF9630
IRF9633
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IRF9233
Abstract: No abstract text available
Text: IRF9230, IRF9231, IRF9232, IRF9233 HARRIS S E M I C O N D U C T O R -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon
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OCR Scan
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PDF
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IRF9230,
IRF9231,
IRF9232,
IRF9233
-150V
-200V,
TA17512.
RF9231,
RF9232,
IRF9233
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Untitled
Abstract: No abstract text available
Text: H A R R IRFF9230, IRFF9231, IRFF9232, IRFF9233 S s e m i c o n d u c t o r -3.5A and -4.0A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3.5A a n d -4 .0 A ,-1 5 0 V a n d -2 0 0 V These are P-Channel enhancement mode silicon gate
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OCR Scan
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IRFF9230,
IRFF9231,
IRFF9232,
IRFF9233
-150V
-200V,
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