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    RF1S9630SM9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S9630SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S9630SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF9630

    Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		IRF9630, RF1S9630SM TA17512. TB334 IRF9630 O-220AB O-263AB IRF9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334 PDF

    IRF9630

    Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		IRF9630, RF1S9630SM TA17512. IRF9630 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334 PDF

    irf9630

    Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
    Text: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		IRF9630, RF1S9630SM TA17512. irf9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		IRF9630, RF1S9630SM -200V, -200V PDF

    irf9630

    Abstract: IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633
    Text: HARFRIS S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs May 1998 Description Features -5.5A and -6.5A, -150V and -200V Linear Transfer Characteristics


    OCR Scan     		IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -150V -200V, TA17512. RF9630, irf9630 IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633 PDF