irf234 n
Abstract: TA17413
Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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Original
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PDF
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IRF234,
IRF235,
IRF236,
IRF237
TA17413.
irf234 n
TA17413
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irf234 n
Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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Original
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PDF
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IRF234,
IRF235,
IRF236,
IRF237
irf234 n
irf*234 n
IRF236
IRF234
IRF237
IRF235
TB334
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Untitled
Abstract: No abstract text available
Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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PDF
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IRF234,
IRF235,
IRF236,
IRF237
1RF234,
RF236,
RF237
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irf*234 n
Abstract: TA17413
Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
|
OCR Scan
|
PDF
|
IRF234,
IRF235,
IRF236,
IRF237
TA17413.
andRF234,
RF236,
RF237
irf*234 n
TA17413
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