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    IRF237 Search Results

    IRF237 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF237 Intersil 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 ?, N-Channel Power MOSFETs Original PDF
    IRF237 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF237 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF237 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    IRF237 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF234, IRF235, IRF236, IRF237 TA17413. irf234 n TA17413

    irf234 n

    Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
    Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF234, IRF235, IRF236, IRF237 irf234 n irf*234 n IRF236 IRF234 IRF237 IRF235 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF237 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)275 V(BR)GSS (V)20 I(D) Max. (A)6.5 I(DM) Max. (A) Pulsed I(D)4.1 @Temp (øC)100 IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF237

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8

    Untitled

    Abstract: No abstract text available
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237

    irf*234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF234, IRF235, IRF236, IRF237 TA17413. andRF234, RF236, RF237 irf*234 n TA17413

    irf234 n

    Abstract: irf*234 n IRF234 irf238 ir1f IRF237 IRF235 IRF236
    Text: Rugged Power M O SFETs_ IRF234, IRF235, IRF236, IRF237 File Number 2208 Avalanche-Energy-Rated N-Channel Power MOSFETs 8.1 A and 6.5 A, 275 V and 250 V fDs on = 0.45 O and 0.68 n N-CHANNEL ENHANCEMENT MODE Feature*: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF234, IRF235, IRF236, IRF237 IRF236 IRF237 irf234 n irf*234 n IRF234 irf238 ir1f IRF235

    irf*234 n

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =


    OCR Scan     		PDF IRF235 IRF234, IRF235, IRF236, IRF237 RF234, irf*234 n

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    IRFP237

    Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
    Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13


    OCR Scan     		PDF T05tifl73 QDDS71D IRF232R IRF230R IRF242R IRF240R IRF252R IRF250R IRFF212R IRFF210R IRFP237 IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244