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    IRF234 Search Results

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    IRF234 Price and Stock

    Rochester Electronics LLC IRF234

    N-CHANNEL HERMETIC MOS HEXFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF234 Bulk 297
    • 1 -
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    • 1000 $1.01
    • 10000 $1.01
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    International Rectifier IRF234

    IRF234 - N-Channel HERMETIC MOS HEXFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF234 789 1
    • 1 $1.02
    • 10 $1.02
    • 100 $0.9597
    • 1000 $0.8678
    • 10000 $0.8678
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    International Rectifier IRF234NSTRLPBF

    Power Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    New Advantage Corporation IRF234NSTRLPBF 119 1
    • 1 -
    • 10 $0.9
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.75
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    IRF234 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF234 Intersil 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 ?, N-Channel Power MOSFETs Original PDF
    IRF234 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF234 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF234 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF234 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF234 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF234 Unknown FET Data Book Scan PDF
    IRF234 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRF234 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF234, IRF235, IRF236, IRF237 TA17413. irf234 n TA17413

    irf234 n

    Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
    Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF234, IRF235, IRF236, IRF237 irf234 n irf*234 n IRF236 IRF234 IRF237 IRF235 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF234 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)8.1 I(DM) Max. (A) Pulsed I(D)5.1 @Temp (øC)100 IDM Max (@25øC Amb)32 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF234

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8

    Untitled

    Abstract: No abstract text available
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237

    irf*234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF234, IRF235, IRF236, IRF237 TA17413. andRF234, RF236, RF237 irf*234 n TA17413

    irf234 n

    Abstract: irf*234 n IRF234 irf238 ir1f IRF237 IRF235 IRF236
    Text: Rugged Power M O SFETs_ IRF234, IRF235, IRF236, IRF237 File Number 2208 Avalanche-Energy-Rated N-Channel Power MOSFETs 8.1 A and 6.5 A, 275 V and 250 V fDs on = 0.45 O and 0.68 n N-CHANNEL ENHANCEMENT MODE Feature*: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF234, IRF235, IRF236, IRF237 IRF236 IRF237 irf234 n irf*234 n IRF234 irf238 ir1f IRF235

    irf244

    Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
    Text: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s


    OCR Scan     		PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 1RF442 irf244 IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA

    irf113

    Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
    Text: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id


    OCR Scan     		PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF250 irf113 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix

    irf*234 n

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =


    OCR Scan     		PDF IRF235 IRF234, IRF235, IRF236, IRF237 RF234, irf*234 n

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    k3226

    Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
    Text: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.


    OCR Scan     		PDF T-39-11 4fl5545H IRF234, IRF235 k3226 LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234

    h bridge irf840 inverter

    Abstract: irf840 pwm ac sine inverter 1kva inverter circuit diagram 3 phase inverter 120 conduction mode waveform AN-967A inverter irf840 sine wave 1kva inverter circuit diagram irfp460 inverter IRFP460 full bridge irf840 pwm ac motor
    Text: APPLICATION NOTE 967A Using H EXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant Introduction The advantages of M O SFETs for high frequency pulse-width modulated (P W M ) inverters and choppers for variable speed


    OCR Scan     		PDF AN-967A h bridge irf840 inverter irf840 pwm ac sine inverter 1kva inverter circuit diagram 3 phase inverter 120 conduction mode waveform AN-967A inverter irf840 sine wave 1kva inverter circuit diagram irfp460 inverter IRFP460 full bridge irf840 pwm ac motor

    IRF1644

    Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
    Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.


    OCR Scan     		PDF 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140 10D05-10010. 10DF1100F8 10JF1-10JF4. 10JQ030-10JQ100. 1OJTF10-10JTF40 10MQ040-10MQ090. IRF1644 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003

    idm 73

    Abstract: IRF244
    Text: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation


    OCR Scan     		PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 idm 73 IRF244

    IRFZ34 mosfet

    Abstract: UNITRODE buck converters DIL16S schematic diagram 72v to 12v converter irf*234 n 16 pin dp
    Text: y _ _ U N IT R O D E UC2578 UC3578 PRELIMINARY Buck Pulse Width Modulator Stepdown Voltage Regulator FEATURES Provides Simple Single Inductor Buck PWM Step-Down Voltage Regulation Drives External High Side NMOS Switch 14V to 72V Input Voltage Operating Range


    OCR Scan     		PDF 100kHz UC2578 UC3578 UC3578 100kHz 100kHz. IRFZ34 IRFZ34 mosfet UNITRODE buck converters DIL16S schematic diagram 72v to 12v converter irf*234 n 16 pin dp

    IRF224

    Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
    Text: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250


    OCR Scan     		PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF224 irf244 THOMSON DISTRIBUTOR 58e d IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221

    irf211

    Abstract: irf244 Irf154 IRF154 N IRF242 IRF243 IRF245 IRF252 1RF240
    Text: - ft A gj £ *± Vd s or € £ Vg s Pd Id * /CH Vd g a t § <Ta=25^C I gss rain * /CH Vg s * V ) (V ) (W) (A ) Vg s t h ) I dss (n A ) (V ) (H A ) (V ) (V ) (V ) Id (n A ) ft & I d (o n ) C is s g fs C oss ft C rss Vg s =0 (m ax) * ty p (0 ) Vg s (V ) * ty p


    OCR Scan     		PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 IRF231 IRF232 IRF233 irf211 irf244 Irf154 IRF154 N IRF242 IRF243 IRF245 IRF252 1RF240

    irf244

    Abstract: IRF242 IRF243 IRF245 IRF252
    Text: - ft A gj £ *± Vds or € £ Vgs Pd Id * /CH Vdg a t§ <Ta=25^C I gss rain * /CH Vg s * V) (V) (W) (A) Vgs th) I dss (nA) (V) (H A ) (V) (V) (V) Id (nA) ft & I d (on) Coss Ciss g fs ft Crss Vgs =0 (max) *typ (0 ) Vg s (V) *typ (A) Id (A) Vgs (V) *typ (S)


    OCR Scan     		PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF25I 10-204AE irf244 IRF242 IRF243 IRF245 IRF252

    IRFP237

    Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
    Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13


    OCR Scan     		PDF T05tifl73 QDDS71D IRF232R IRF230R IRF242R IRF240R IRF252R IRF250R IRFF212R IRFF210R IRFP237 IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244

    3 phase inverter 120 conduction mode waveform

    Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
    Text: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed


    OCR Scan     		PDF AN-967A 3 phase inverter 120 conduction mode waveform inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter