Untitled
Abstract: No abstract text available
Text: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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MT4C16256/7/8/9
256KX16DRAM
MT4C16257
MT4C16258/9
512-cycle
500mW
T4C1S256/7/VU.
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Untitled
Abstract: No abstract text available
Text: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE
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MT4C16256/7/8/9
40-Pin
C1993
MT4C162S6/7/V9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages
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MT4C16256/7/8/9
256KX16DRAM
40-Pin
MT4C16256/7/8/9L
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Untitled
Abstract: No abstract text available
Text: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*
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MT4C16256/7/8/9
512-cycle
MT4C16257/9
MT4C16258/9
Tim93
MT4C162SS/7/I/9
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Untitled
Abstract: No abstract text available
Text: HICR0N TECHNOLOGY INC bOE D • b l l l S H 1! GGObbOl 43b ■ urn PRELIMINARY 256K x 16 DRAM WIDE DRAM FAST-PAGE-MODE SELF REFRESH FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 p inouts, tim ing, functions
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500mW
512-cycle
MT4C16256/7/8/9S
MT4C16256/7/8/9
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C16256/7/8/9 256KX 16 WIDE DRAM MICRON WIDE DRAM 256K 16 DRAM X FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500m W active, typical
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MT4C16256/7/8/9
256KX
512-cycle
40-Pin
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0Q1335
Abstract: No abstract text available
Text: PRELIMINARY M T4C 16256/7/8/9 256K X 16 W IDE DRAM I^IICZROIM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • I n d u s try -s ta n d a rd x l6 p in o u ts, tim in g , fu n ctio n s a n d p ack ag e s • H ig h -p e rfo rm a n c e C M O S silicon-gate pro c e ss
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512-cycle
0Q1335
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Untitled
Abstract: No abstract text available
Text: DRAM 256K X 16 DRAM 5V, FAST PAGE MODE IEATURES • Industry-standard xl6 pinouts, timii g, functions and packages • High-performance CMOS silicon-ga e process • Single +5V ±10'^ power supply* • Low power, 3mW standby; 375mW ictive, typical • All device pins are fully TTL-compa ible
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375mW
512-cycle
40-Pin
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Untitled
Abstract: No abstract text available
Text: m ' i PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process
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MT4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cyde
500mW
MT4C162S6/7/W
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RCD 2226
Abstract: No abstract text available
Text: ADVANCE M T 4 C 16256/7/8/9 256K X 16 DRAM p ilC Z R O IM DRAM 256K x 16 DRAM FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply
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PDF
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500mW
40-Pin
3C16256
T4C16257
RCD 2226
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY ICRON M T 4C 16256/7/8/9 S 256K X 16 W IDE DRAM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process
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500mW
512-cycle
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MT4C16257
Abstract: MT4C16256DJ-7 MT4C1625
Text: ADVANCE M T4C 16256/7/8/9 L 256K X 16 DRAM M IC R O N DRAM 256K x 16 DRAM g LOW POWER, EXTENDED REFRESH < FEATURES • Industry standard xl6 pinouts, tim ing, functions and packages • High-perform ance, CMOS silicon-gate process • Single +5V ±10% pow er supply
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MT4C16257/9
MT4C16258/9
40-Pin
MT4C16256/7fe/9
T4C16256
MT4C16256/7r
MT4C16257
MT4C16256DJ-7
MT4C1625
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T4C16257
Abstract: MT4C16256
Text: MT4C16256/7 256K X 16 DRAM M IC R O N D R A M X 2 5 6 K 1 6 D R A M FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical
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MT4C16256/7
512-cycle
T4C16257
40-Pin
40/44-Pin
S1994,
MT4C16256
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 256K W IDE DRAM 16 DRAM X FAST-PAGE-MODE SELF REFRESH FEATURES PIN A SSIG N M EN T Top View • SELF REFRESH, or "Sleep M ode" • Industry-standard x l6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process
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OCR Scan
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500mW
512-cycle
MT4C16257/9
MT4C16256/7/8/9
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Untitled
Abstract: No abstract text available
Text: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS
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T4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cycle
500mW
40-Pin
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4C16257
Abstract: No abstract text available
Text: PRELIMINARY M T4C16256/7/8/9 L 256K X 16 WIDE DRAM ICRON WIDE DRAM 256K x 16 DRAM FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 p inouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply
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T4C16256/7/8/9
MT4C16257/9
MT4C16258/9
512-cycle
500mW
40-Pin
MT4C16256/7/8/9
125us
4C16257
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C16256/7/8/9 S 256K X 16 WIDE DRAM I^ IIC Z R O N WIDE DRAM 256K x 16 DRAM FEATURES • SE L F REFRESH , or "S lee p M o d e " • In d ustry -stan dard x l6 pin ou ts, tim ing, functions an d p a ck a g e s • H igh -perform an ce C M O S silicon-gate process
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MT4C16256/7/8/9
500mW
512-cycle
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Untitled
Abstract: No abstract text available
Text: RPR 1 1993 PRELIMINARY M IC P D N I 1 IW = ! » T M T 4 0 1 6 2 5 6 /7/8 /9 S 2 5 6 K X 16 W ID E D R A M WIDE DRAM 256K x 16 DRAM FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc I 1 DQ1 I 2 D 02 [ 3 DQ3 [ 4 DQ4 C S Vcc DQ5 DQ6 DQ7 DOS
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40-Pin
l62S6tf/fl/9
4C16256/7/8/9
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T4C16257DJ
Abstract: t4c16257 T4C16257DJ-7
Text: l^ lld R O N 256K DRAM M T4C 16257 X 16 DRAM 256K x 16 DRAM 5V, FAST PAGE MODE • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical
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512-cycle
40-Pin
40/44-Pin
MT4C16257
T4C16257DJ
t4c16257
T4C16257DJ-7
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT4C16256/7/8/9 L 256KX 16 DRAM MICRON I r iCH NOLOGY. IN2 MICRON TECHNOLOGY INC 55E P DRAM • LlllSM'î 0G04Sbl IMS HIMRN JEW 256K X16 DRAM LOW POWER, EXTENDED REFRESH — - :- S -1 7 - PIN ASSIGNMENT Top View
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MT4C16256/7/8/9
256KX
0G04Sbl
MT4C16257/9
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Untitled
Abstract: No abstract text available
Text: PlICRON SEMICONDUCTOR INC b3E D WÊ blllSMT QODflbSM SSS W M R N MICRON I MT 4C16256/7/8/9 256K X 16 WIDE DRAM SEMICONDUCTOR MC WIDE DRAM 256Kx 16DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process
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PDF
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4C16256/7/8/9
256Kx
16DRAM
512-cycle
MT4C16257/9
MT4C16258/e
MT4C16256/7/8/9
MT4C162S6/7/I/Â
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MT4C16257
Abstract: No abstract text available
Text: PRELIMINARY |viic:noN 256K MT4C16256/7/8/9 16 WIDE DRAM X 256K X 16 DRAM WIDE DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, tim ing, functions and packages • H igh-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply
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OCR Scan
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PDF
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MT4C16256/7/8/9
512-cycle
MT4C16257/9
MT4C16258/9
40-Pin
MT4C16257
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