Untitled
Abstract: No abstract text available
Text: T3913 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)30
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T3913
Current30
Voltage400
Time200n
Current25u
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sfn065d
Abstract: itron 406
Text: 8368602 SOL ITRON DEVICES SFN065D INC 01990 SWITCH MOS PA CKA G E TO-3 IDM VGS PD XL T J oper T . stg UNITS Voltage, Drain to Source Drain Current, Clamped Inductive XDSS V 010 G fs VGS(th). IGSS C ISS CRSS coss ^d(on) t r td ( o f f ) Cf 16 W 20 A -55 to +150
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T-39-11
SFN065D
5M6-24UNF-2A
P06fTKM
eA03AT
sfn065d
itron 406
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sfnf065a
Abstract: TO228
Text: S O L IT R O N D E V IC E S INC- 7D d e . | a a tflb D a o a o n a a SWITCH MOS i | t^39^o7 SFNF065A POWER MOS MAXIMUM IDM VGS PD h ^•J oper T stg I. UNITS Voltage, Drain to Source 60 V Drain Current, Continuous @ T =25°C ’ c Drain Current, Pulsed
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SFNF065A
Drain0411
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf065a
TO228
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sfn452a
Abstract: No abstract text available
Text: 8368602 » F l f l B b ö b O S OQQECHB DEVICES 1 I INC 70C ÏI3 Ç M 3 02093 SWITCH MOS ^ SFN452A POWER MOS PACKAGE TO -3 MAXIMUM RATINGS VDS *D XDM VGS PD Tj oper T stg 1- UNITS PARAMETER SYMBOL Voltage, Drain to Source 500 V Drain Current, Continuous @ T *25°C
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SFN452A
Voltag0-32
5M6-24UNF-2A
P06fTKM
eA03AT
sfn452a
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sfn151
Abstract: No abstract text available
Text: 8368602 SOLITRON DEVICES INC SFN151 70C 02020 SWITCH MOS PACKAGE TO -3 D T-39-13 ï>F|fl3 bûL.oE □□□sded 7 | ~ POWER MOS MAXIMUM RATINGS VDS XD IDM VGS PD *L ^J oper T stg UNITS PARAMETER SYMBOL 60 Drain Current, Continuous @ Tc=25°C 40 Drain Current, Pulsed
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T-39-13
SFN151
5M6-24UNF-2A
P06fTKM
eA03AT
sfn151
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sfnf101a
Abstract: electrical symbols
Text: SOLÎTRON DEVICES INC 7Ü DE | Û3t.flti02 O Q O l ^ l b | T-39-05 SWITCH MOS SFNF101A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg “ 100 Drain Current, Continuous @ T »25°C c Drain Current, Pulsed 1 .5 4.5 A Voltage, Gate-to-Source
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flti02
T-39-05
SFNF101A
5M6-24UNF-2A
P06fTKM
eA03AT
sfnf101a
electrical symbols
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2N7074
Abstract: No abstract text available
Text: 33E D SILICONIX INC fCT'S i ficonix • 62SM73S QOlbDEb 5 « S I X 2N7074 incorporated N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR|DSS "W* Id (A 500 0,85 7.0 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated
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62SM73S
2N7074
O-254AA
THERMG01ba21
T-39-13
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eRVDS
Abstract: 2SK797 OS1012
Text: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.
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Jb457S5S
2SK797
eRVDS
OS1012
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2SK786
Abstract: fsjc EER 35 kd
Text: E m C ELECTRONICS T| b42752S INC ÜDiflT34 98D 18934 D T - 3 9 -1 3 =J . P R E LIM IN A R Y S P E C IF IC A T IO N F A S T S W IT C H IN G N -Ç H A N N EL S IL IC O N PO W ER Absolute Maximum Rat¡ngs Ta=25*C 800V VOSS Drain to Source Voltage ± 2j V vcss
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T-39-13
GoiflT34
2SK786
-55to
51DTH
fsjc
EER 35 kd
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2SK707
Abstract: P07E2 18896 PVS100 SK707 6M60 nec 13A
Text: 6427525 N E C ELECTRONICS INC N E C ELECTRONICS INC : fy bÿÿâÿ lK MO S F.IELD E F F E C T , T R A N S I ST 1 / FAST SWITCHING N-CHANNEL SILICON POWER M A X ., • 1 2 ± 0.2 * ,— A FET Features •«Suitable for switching power supplies, DC-DC converters and pulse c irc u its
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-55tc
PVS100
T-39rl3
2SK707
P07E2
18896
SK707
6M60
nec 13A
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VNS009D
Abstract: VNS008D 001S03 VNT008D VNT009D
Text: 18E D SILICONIX INC • B254735 001502=1 fc, ■ VNT008D/9D, VNS008D/9D IX Sincorporated illconix JLM N-Channel Enhancement Mode Transistors TO-220AB TO P VIEW PRODUCT SUMMARY PART NUM BER V BR|DSS VNT008D O IDS(ON (il) (A) >D 650 1.5 5.77 VNS008D 600 1.5
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2S473S
VNT008D/9D,
VNS008D/9D
O-220AB
VNT008D
VNS008D
VNT009D
VNS009D
ITQ09A
NS009Ã
001S03
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diode G727
Abstract: IRH150 T0204 731 MOSFET annealing copper g730 J600 MOSFET G-731 IRH15Q
Text: HE D I 4055452 GQG^SG 7 | INTERNATIONAL R E C T I F I E R Preliminary Data Sheet No. PD-9.478A INTERNATIONAL RECTIFIER HEXF ET TRANSISTORS IRH15Q RAD HARD Product Summary 100 Volt, 0.0550, Rad Hard HEXFET International R e ctifie r’s RAD HARD H EXFETs demonstrate excellent threshold voltage stability and
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40ss4sa
IRH15Q
IRH150
T-39-13
G-737
diode G727
T0204
731 MOSFET
annealing copper
g730
J600 MOSFET
G-731
IRH15Q
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AN-959
Abstract: AN-961 AN-963 IRC150
Text: HE 0 I MÔ5S452 ODOÔ"l4b ô | Provisional Data Sheet No. PD-9.502A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED HEXSense — Current; Sense IRCiSO Product Summary 100 Volt, 0.055 Ohm Current Sense Plastic Package Similar to T0-220
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5S45Z
T0-220
IRC150
O-204AE
T-39-13
AN-959,
AN-961,
AN-962
AN-963.
AN-959
AN-961
AN-963
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Diode FAJ 32
Abstract: diode c604 st c608 A diode IRFPF40 IRFPF42 20V n-Channel Power MOSFET c608 e diode irf 607 diode lg 47a 7A, 100v fast recovery diode
Text: h e D I M assM sa G ao flfisa □ | Data Sheet No. PD-9.580A IN TER NAT IO NA L R E C T IF IE R f-AJ INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFPF40 IRFPF4S N-CHANNEL 900 Volt, 2.5 Ohm HEXFET TO-247AC TO-3P Plastic Package
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O-247AC
C-607
IRFPF40,
IRFPF42
T-39-13
C-608
Diode FAJ 32
diode c604 st
c608 A diode
IRFPF40
20V n-Channel Power MOSFET
c608 e diode
irf 607
diode lg 47a
7A, 100v fast recovery diode
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irfae42
Abstract: JRFAE42
Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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IRFAE40
IRFAE42
O-204AA
G-237
IRFAE40,
IRFAE42
S54S2
G-238
JRFAE42
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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2N6764
Abstract: 2N6763 27812
Text: FAIRCHILD SEMICONDUCTOR A4 DË 3 4 ^ 7 4 3469674 F AIRCHILD SEMICONDUCTOR □□27Û1D 1 J - 84D 2 7 8 1 0 D 2N6763/2N6764 T - *7-/3' N-Channel Power M O SFETs, 38 A, 60 V/100 V' F A IR C H IL D A Schlumberger Company Power And Discrete Division TO-2Q4AE
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2N6763/2N6764
2N6764
2N670
2N6763/2N6764
T-39-13
2N6763
27812
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irf350
Abstract: 1RF35 2clg
Text: HE D I MflSS4S2 GQOTISE T | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.304G T - lî z L l— INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF3SO fo IRF351 IRF3SS IM - C h a n n e l IRF353 Features: 400 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International
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IRF351
IRF353
G-134
irf350
1RF35
2clg
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Untitled
Abstract: No abstract text available
Text: 3QE { = J *w Æ u D _WÊ_ 7 ^ 5 3 ? S C S -T H O M S O N Q Ü S W S s fi 1 • ' " p 3 < :M 3 > S’ ,H # " S M H D ^ © [l[L i© ¥ ^ © iD g i S G S P 3 6 1 S G S P 3 6 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 V qss
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SGSP361
SGSP362
SGSP361
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irfbc40
Abstract: No abstract text available
Text: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary
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IRFBC40
O-220AB
C-405
IRFBC40,
IRFBC42
C-406
irfbc40
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Untitled
Abstract: No abstract text available
Text: 6427S25 N E C D Ë J b427SES E L E C T R O N IC S DD11DD1 IN C 980 19009 D T - 3 «7-/3 1 |~ M 0S F I E L D E F F E C T T R A .V S I S T C K ELECTRON DP/ICE FAST SW IT C H IN G N - "C H A N N E L S I L I C O N POWER WOS FET PA CK A G E DIMENSIONS Features
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6427S25
b427SES
DD11DD1
T-39-13
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Untitled
Abstract: No abstract text available
Text: fiâïWS N E C N E C ELECTRONICS 98D INC ELECTRONICS INC ~Tfl 19005 D 7" — 3 DËf| t.Ma?SES i G D n D D S 4 — * *— M O S F I E L D E F F E C T T R A X S I S T C r . ELECTRON DEVICE 2 F A S T N - C H A N X E L S K 8 2 S S W I T C H I N G S I L I C O N '
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T-39-13
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T
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tiME75E
h427sa5
T-39-13
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Untitled
Abstract: No abstract text available
Text: 6427525 TÛ N E C De | ELECTRO N ICS bM27S5S OaiöTBfi INC b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIE LD EFFECT P OWE R TRANSISTOR ELECTRON DEVICE FAST SWITCHING N-CHANNEL S I L I C O N POWER MOS FET FEATURES « S u ita b le f o r sw itch in g power s u p p lie s ,
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bM27S5S
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