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    2N670 Price and Stock

    EDAC Inc J67048822N67011

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    Keysight Technologies N6700C/900/PLG

    Modular Power Supplies N6700C Low-Profile Modular Power System Mainframe, 400W, 4 Slots, UK/EU Pwr Cord
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    Mouser Electronics N6700C/900/PLG 2
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    2N670 Datasheets (98)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N670 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N670 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N670 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N670 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N670 Unknown Vintage Transistor Datasheets Scan PDF
    2N670 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N670 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6701 Hewlett-Packard Linear Power Transistors Scan PDF
    2N6701 Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF
    2N6701 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    2N6701 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6702 General Electric High-current silicon N-P-N VERSAWATT transistor. Scan PDF
    2N6702 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6702 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6702 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6702 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6702 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6702 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors, Epoxy Cases Scan PDF
    2N6703 General Electric High-current silicon N-P-N VERSAWATT transistor. Scan PDF
    2N6703 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N670 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original     		PDF 2N6707 O-237 C-120

    2N6708

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original     		PDF ISO/TS16949 2N6708 O-237 C-120 2N6708

    2N6703

    Abstract: No abstract text available
    Text: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor 2N6703 DESCRIPTION • Collector-Emitter Sustaining Voltage:VCEO(sus)=110V(Min) • High Switching Speed 3 1.BASE


    Original     		PDF 2N6703 O-220C 2N6703

    2N6708

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6708 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original     		PDF 2N6708 O-237 C-120 2N6708

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6709 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.


    Original     		PDF O-237 2N6709 C-120

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC


    Original     		PDF 2N6705 O-237 C-120

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6708 PNP SILICON PLANAR EPITAXIAL TRANSISTOR This Device was Designed for General Purpose Medium Power Amplifier.


    Original     		PDF O-237 2N6708 C-120

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-237 Plastic Package 2N6707 NPN SILICON PLANAR EPITAXIAL TRANSISTORS This Device was Designed for General Purpose Medium Power Amplifier.


    Original     		PDF O-237 2N6707 C-120

    2n6704

    Abstract: No abstract text available
    Text: ^ £/-\oaue£i, One. j TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistor 2N6704 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 130V(Min) • High Switching Speed


    Original     		PDF 2N6704 O-220C 30U30* 2n6704

    2N6705

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6705 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector -Base Voltage


    Original     		PDF ISO/TS16949 2N6705 O-237 C-120 2N6705

    TO-237

    Abstract: 2N6709
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR 2N6709 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original     		PDF ISO/TS16949 2N6709 O-237 C-120 TO-237 2N6709

    2N6702

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6702 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·Designed for converters,inverters, pulse-width-modulated regulators


    Original     		PDF 2N6702 O-220 2N6702

    2N6707

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6707 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION SYMBOL VCBO Collector Base Voltage


    Original     		PDF ISO/TS16949 2N6707 O-237 C-120 2N6707

    Untitled

    Abstract: No abstract text available
    Text: 2N6701 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF 2N6701

    2N6701

    Abstract: s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n HPAC-100
    Text: m COM PONENTS LINEAR POWER TRANSISTOR 2N6701 HXTR-5101 Features H IG H P 1dB LIN E A R PO W ER 23 dBm Typical at 2 G Hz 22 dBm Typical at 4 G Hz BIPOLAR 1.0 '0.041 TYP TRANSISTORS HEW LETT W , PACKARD H IG H P1dB G A IN 13 dB Typical at 2 G Hz 7.5 dB Typical at 4 GHz


    OCR Scan     		PDF 2N6701 HXTR-5101) HPAC-100 2N6701 s parameters 4ghz HXTR-5101 4ghz s parameters transistor S21E 4ghz transistor n

    2N6701

    Abstract: No abstract text available
    Text: m ASI 2N6701 \ \ SILICON NPN RF TRANSISTOR DESCRIPTION: The ASI 2N6701 is Designed fo r L inear P ow er A m p lifie r A pplications to 4 G Hz . FEATURES: • Direct R eplacem ent fo r 2N6701 & HP HXTR5101 • Gold M etalization • Herm etic Package MAXIMUM RATINGS


    OCR Scan     		PDF 2N6701 2N6701 HXTR5101

    HXTR-5103

    Abstract: No abstract text available
    Text: HEliJLETT-PACKARDi C MPNT S E OE D □ 4447SÔ4 OOOSS41 =1 □ K ’h n b H E W LETT HOM P A C K A R D _ ~ X '~ 1 'i~ 0 5 L inear P ow er Transistors HXTR-5001 Chip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV) Features D escription


    OCR Scan     		PDF 4447SÃ OOOSS41 HXTR-5001 2N6701 HXTR-5101, 2N6741 HXTR-5103, MIL-S-19500, MIL-STD-750 HXTR-5103

    2N6700

    Abstract: No abstract text available
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. NPN 2N 6714 2N 6715 2N 6724 2 N 6725 2N 6716 2N 6717 2N6731 2N 6718 PNP V CBO V e t o 2N 6726 2N 6727 — — 2N 6728 2N 6729 2N 6732 2N 6730 !C !c m P,0, Max. V CE|Sat at V V A A V 40 50 50


    OCR Scan     		PDF 2N6700 2N6731 ZTX704

    CA3725

    Abstract: i848 Power Transistors SIT TA916 2n6704 2N6702
    Text: T'3 e>-/9 2N6702, 2N6703, 2N6704 HARRIS SEniCOND SECTOR File Number SbE D 1187 43Q2E71 Q04Gb32 TTb « H A S High-Current, Silicon N-P-N VERSAWATT Transistors TERMINAL DESIGNATIONS _ Switching Applications Feature«: • Fast switching speed at temperatures up to 125° C


    OCR Scan     		PDF 2N6702, 2N6703, 2N6704 43Q2E71 Q04Gb32 O-22QAB 2N6703 2N6704* CA3725 i848 Power Transistors SIT TA916 2n6704 2N6702

    2n6700

    Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA


    OCR Scan     		PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 2N6718 2N6729 2N6724 2N6725

    NPN transistor bc 148

    Abstract: 2N6704 bc 148 npn transistor ca3725 2N6702 RCA transistors 2N6703 transistor BC 147 RCA Solid State Power Transistor
    Text: ~GÏ 3875081 » T|Bä7S0öl G E S O LI D STATE 01E 0017144 b f D1 ~S S ~U 17144 High-Speed Power i 2N6702, 2N6703, 2N6704 File Number High-Current, Silicon N-P-N VERSAWATT Transistors


    OCR Scan     		PDF 2N6702, 2N6703, 2N6704 O-220AB RCA-2N6702, 2N6704* NPN transistor bc 148 bc 148 npn transistor ca3725 2N6702 RCA transistors 2N6703 transistor BC 147 RCA Solid State Power Transistor

    2N4703

    Abstract: No abstract text available
    Text: 2N6702, 2N6703, 2N6704 File N um ber High-Current, Silicon N-P-N VERSAWATT Transistors 1187 TERM INAL DESIGNATIONS Switching Applications i _ c FLA N G E Feature«: • Fast sw itching speed at temperatures up to 12S°C ■ Low Vcsisat) ■ VERSAWATT plastic package


    OCR Scan     		PDF 2N6702, 2N6703, 2N6704 O-220AB 2N6703 2N6704* 2N6704 2N4703

    HXTR-5101

    Abstract: 2N6701
    Text: m ASI 2N6701 \ \ SILICON NPN RF TRANSISTOR DESCRIPTION: The ASI 2N6701 is Designed for Linear Power Amplifier Applications to 4 GHz . FEATURES: • Direct Replacement for 2N6701 & HP HXTR5101 • Gold Metalization • Hermetic Package MAXIMUM RATINGS 120 lc


    OCR Scan     		PDF 2N6701 2N6701 HXTR5101 80metic HXTR-5101

    HXTR-5103

    Abstract: HXTR-5101 S31E2 2N6701 2N6741 HXTR-5001 5101 2N5701 HXTR-5101TXV
    Text: HEWLETT-PACKARD-. CMPNTS EOE D □ 4447SÖ4 OOOSS41 1 B L in ea r P o w e r T ran sisto rs HXTR-5001 C hip Technical D ata 2N6701 HXTR-5101, TX andTXV 2N6741 (HXTR-5103, TX andTXV ) F eatu res D escrip tion • H igh Output P ow er 23 dBm Typical PliB at 2 GHz


    OCR Scan     		PDF 4447SS4 OOOSS41 f-33-OS HXTR-5001 2N6701 HXTR-5101, 2N6741 HXTR-5103, MIL-S-19500, MIL-STD-750 HXTR-5103 HXTR-5101 S31E2 2N6701 2N6741 5101 2N5701 HXTR-5101TXV