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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ESE D N AMER PHILIPS/DISCRETE bbSETEl 0QE0M70 5 • BUK454-500A BUK454-500B PowerMOS transistor ■■■■■a T"- 3 7 - U GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	0QE0M70 BUK454-500A BUK454-500B BUK454 -500A -500B
mt4c1024dj7 Abstract: mt4c1024dj-7 Text: \|v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply	OCR Scan	PDF	MT4C1024 150mW 512-cycle 200nA 18-Pin 20-Pin 125ps MT4C1Q24L 1024L MT4C1024L mt4c1024dj7 mt4c1024dj-7

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: ESE D N AMER PHILIPS/DISCRETE bbSETEl 0QE0M70 5 • BUK454-500A BUK454-500B PowerMOS transistor ■■■■■a T"- 3 7 - U GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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0QE0M70 BUK454-500A BUK454-500B BUK454 -500A -500B

mt4c1024dj7

Abstract: mt4c1024dj-7
Text: |v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply

OCR Scan

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MT4C1024 150mW 512-cycle 200nA 18-Pin 20-Pin 125ps MT4C1Q24L 1024L MT4C1024L mt4c1024dj7 mt4c1024dj-7