I8212
Abstract: No abstract text available
Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.
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TIP30F
TIP30AF;
TIP30BF
TIP30CF:
TIP30DF
OT186
TIP29F,
TIP29AF,
TIP29BF,
TIP29CF
I8212
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2n6125
Abstract: No abstract text available
Text: Power Transistors TYPE POLA NO. RITY M AXIM UM RATINGS CASE Pd IC VCEO mW (A) (V) H FE VCE(sat) min max IT CO M P L E IC VCE max IC min MENTARY (mA) (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100
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MH8100
MH8106
MH8108
MH8700
MH0810
MH0816
MH0818
2n6125
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transistor 13003 AD
Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)
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OT-23
KST06
KST05
KSC1623
BCW71
BCX70G
BCX70H
BCX70J
BCX70K
BCX71G
transistor 13003 AD
ksd-180
HF 13003
KSD180
13003 HF
KSD168
KSD966
ksd-168
PNP NPN Transistor VCEO 120V 100V Ic 7A
KSC 1.5k 250v
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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T1P30C
Abstract: No abstract text available
Text: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • Designed for Complementary Use with the TIP29 Series • 30 W at 25 “C C ase Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current
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TIP30,
TIP30A
TIP30B,
TIP30C
TIP29
O-220
TIP30
TJP30B
T1P30C
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SGS-Thomson
Abstract: No abstract text available
Text: Wi TIP29A/29B/29C TIP30A/30B/30C COMPLEMENTARY SILICON POWER TRANSISTORS . TIP31A, TIP31C, TIP32A AND TIP32C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP31 A, TIP31B and TIP31C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in
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TIP29A/29B/29C
TIP30A/30B/30C
TIP31A,
TIP31C,
TIP32A
TIP32C
TIP31
TIP31B
TIP31C
O-220
SGS-Thomson
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vip30
Abstract: tip30c T1P30 T1P30A T1P30B TIP29 TIP29A TIP29B TIP29C TIP30
Text: PANASONIC INDL/ELEK -CIO 15E D • ^ 3 5 0 5 2 0G104E3 Silicon PNP Power Transistors T ■ '3 3 ' n TO-220 Package Absolute Maximum Ratings Ta=25°C Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current
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0G104E3
T-33-ft
O-220
T1P30
TIP30A
T1P30B
TIP30C
TIP29,
TIP29A,
TIP29B,
vip30
T1P30A
TIP29
TIP29A
TIP29B
TIP29C
TIP30
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T1P31C
Abstract: T1P-31C T1P32C TO-220 H0810 T1P-32C
Text: Power Transistors H FE M A X IM U M R A TIN G S T Y PE NO. POLA R IT Y CASE Pd Ic ^C E O W (A) (V) min fx ^ C E (s a l) max Ic ^C E max Ic min (A) (V) (V) (A) (M H z) COM PLE M EN TA R Y T Y PE BD239 N TO-220 30 2 45 15 1 4 0.7 1 3 BD240 BD239A N TO-220
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BD239
BD239A
BD239B
BD240
BD240A
BD240B
BD241
BD241A
BD241B
BD242
T1P31C
T1P-31C
T1P32C
TO-220
H0810
T1P-32C
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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30df
Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
Text: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.
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TIP30F
TIP30AF;
TIP30BF
TIP30CF;
TIP30DF
OT186
TIP29F,
T1P29AF,
TIP29BF,
TIP29CF
30df
AI mm sot 553
TIP29BF
TIP29DF
TIP29F
TIP30AF
TIP30BF
TIP30CF
TIP30DF
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