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    T17N Search Results

    T17N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0302XT-17NTJEW Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen free Visit Coilcraft Inc
    0805HT-17NTJL Coilcraft Inc RF inductor, ceramic core, 5% tol, SMT, RoHS Visit Coilcraft Inc
    0805HT-17NTJLB Coilcraft Inc RF inductor, ceramic core, 5% tol, SMT, RoHS Visit Coilcraft Inc
    0302XT-17NTJE Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen free Visit Coilcraft Inc
    0302XT-17NT Coilcraft Inc Power inductor, shielded, 20% tol, SMT, RoHS, halogen free Visit Coilcraft Inc
    SF Impression Pixel

    T17N Price and Stock

    Rochester Electronics LLC AT17N512-10PI

    CONFIG MEMORY, 512KX1, SERIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AT17N512-10PI Tube 395 58
    • 1 -
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    • 100 $5.22
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    • 10000 $5.22
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    GeneSic Semiconductor Inc G3R20MT17N

    SIC MOSFET N-CH 100A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey G3R20MT17N Tube 153 1
    • 1 $135.46
    • 10 $126.351
    • 100 $135.46
    • 1000 $135.46
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    Mouser Electronics G3R20MT17N 143
    • 1 $135.45
    • 10 $126.34
    • 100 $122.89
    • 1000 $122.89
    • 10000 $122.89
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    Newark G3R20MT17N Bulk 108 1
    • 1 $109.92
    • 10 $109.92
    • 100 $109.92
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    TME G3R20MT17N 2 1
    • 1 $140
    • 10 $122
    • 100 $122
    • 1000 $122
    • 10000 $122
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    NAC G3R20MT17N Tube 10
    • 1 -
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    • 100 $150.69
    • 1000 $137.39
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    Chip1Stop G3R20MT17N 120
    • 1 $134.88
    • 10 $122.54
    • 100 $116.78
    • 1000 $116.78
    • 10000 $116.78
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    Honeywell Sensing and Control 62NT1-7-NH

    SWITCH TOGGLE DPDT 10A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 62NT1-7-NH Bulk 15 1
    • 1 $23.1
    • 10 $20.412
    • 100 $20.412
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    Mouser Electronics 62NT1-7-NH
    • 1 $38.03
    • 10 $35.77
    • 100 $34.62
    • 1000 $30.39
    • 10000 $30.39
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    Newark 62NT1-7-NH Bulk 17 1
    • 1 $49.74
    • 10 $46.4
    • 100 $41.92
    • 1000 $41.92
    • 10000 $41.92
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    RS 62NT1-7-NH Bulk 16 Weeks 50
    • 1 -
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    • 100 $48.31
    • 1000 $43.48
    • 10000 $43.48
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    TTI 62NT1-7-NH Bulk 69 1
    • 1 $43.91
    • 10 $40.43
    • 100 $34.62
    • 1000 $27.58
    • 10000 $27.58
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    TME 62NT1-7-NH 1
    • 1 $40.52
    • 10 $40.52
    • 100 $40.52
    • 1000 $40.52
    • 10000 $40.52
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    Powell Electronics 62NT1-7-NH 6 50
    • 1 -
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    • 100 $31.65
    • 1000 $27.93
    • 10000 $24.2
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    Honeywell Sensing and Control 2NT1-7-NH

    SWITCH TOGGLE DPDT 10A 125V
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    DigiKey 2NT1-7-NH Bulk 25
    • 1 -
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    • 100 $22.9944
    • 1000 $22.9944
    • 10000 $22.9944
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    ITT Interconnect Solutions KJL6T17N6PN

    CIRCULAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KJL6T17N6PN Bulk 25
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    • 100 $331.4072
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    Interstate Connecting Components KJL6T17N6PN
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    Master Electronics KJL6T17N6PN
    • 1 -
    • 10 $787.08
    • 100 $309.44
    • 1000 $309.44
    • 10000 $309.44
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    Find more T17N price and stock on Findchips.com

    T17N Datasheets (302)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T17N04BOC Eupec Silicon Controlled Rectifier Scan PDF
    T17N04BOF Eupec Silicon Controlled Rectifier Scan PDF
    T17N04COC Eupec Silicon Controlled Rectifier Scan PDF
    T17N04COF Eupec Silicon Controlled Rectifier Scan PDF
    T17N04UOC Eupec Silicon Controlled Rectifier Scan PDF
    T17N06BOC Eupec Silicon Controlled Rectifier Scan PDF
    T17N06BOF Eupec Silicon Controlled Rectifier Scan PDF
    T17N06COC Eupec Silicon Controlled Rectifier Scan PDF
    T17N06COF Eupec Silicon Controlled Rectifier Scan PDF
    T17N06UOC Eupec Silicon Controlled Rectifier Scan PDF
    T17N06UOF Eupec Silicon Controlled Rectifier Scan PDF
    T17N08BOC Eupec Silicon Controlled Rectifier Scan PDF
    T17N08BOF Eupec Silicon Controlled Rectifier Scan PDF
    T17N08COC Eupec Silicon Controlled Rectifier Scan PDF
    T17N08COF Eupec Silicon Controlled Rectifier Scan PDF
    T17N08UOC Eupec Silicon Controlled Rectifier Scan PDF
    T17N08UOF Eupec Silicon Controlled Rectifier Scan PDF
    T17N1000BOB Telefunken Electronic 1.0kV V[drm] Max., 17A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T17N1000BOB Telefunken Electronic 1.0kV V[drm] Max., 17A I[T] Max. Silicon Controlled Rectifier Scan PDF
    T17N1000BOB Vishay Telefunken 1.0kV V[drm] Max., 17A I[T] Max. Silicon Controlled Rectifier Scan PDF
    ...

    T17N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J55323QG 256Mbit

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4

    DDR2 x32

    Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-G DDR2 x32 GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N

    WL 系列

    Abstract: No abstract text available
    Text: TOKEN TRWL 貼片開放式繞線超薄高電流電感 貼片繞線電感 超薄高電流電感 產品簡介 德鍵電子生產的繞線貼片電感 - 採用高 共振頻率的陶瓷體線繞結構，超小體積 電感，可提供較高的 Q 值超薄型，


    Original     		PDF 350MHz WL 系列

    MICRON gddr3

    Abstract: GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810
    Text: ADVANCE‡ 256Mb: x32 GDDR3 SDRAM GRAPHICS DDR3 SDRAM MT44H8M32 – 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • • • • • • • • • • • • • • • • •


    Original     		PDF 256Mb: MT44H8M32 09005aef808f8a4f MICRON gddr3 GDDR3 SDRAM 256Mb gddr3 FBGA DDR3 x32 35w4 MT44H8M32F2FW-16 32x4 BA1T10 marking R810

    T103 0830

    Abstract: t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06
    Text: Wire Wound Chip Inductor－WL Series Feature －Wire wound Ceramic Construction Provide High SRFs －Ultra-compact Inductors Provide Exceptional Q Values －Low profile , High Current are Available －Miniature SMD Chip Inductor for Fully Automated Assembly


    Original     		PDF 12hrs T103 0830 t1n6 WL02 T WL05 WL05-T3N0 T22N 900 T3N6 WL02 Woofer 801 WL06

    DDR2 x32

    Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-GC14/16/20 DDR2 x32 GC14 K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User

    T6N8

    Abstract: No abstract text available
    Text: WL Series Stackpole Electronics, Inc. Wirewound Ceramic Chip Inductor • • • • • • Features: Resistive Product Solutions WW on ceramic provides high SRFs Robust termination for outstanding mechanical strength Ultra compact inductors provide exceptional Q values


    Original     		PDF 350MHz TH39N 50MHz TH47N TH56N T6N8

    k4j52324ki-hc1a

    Abstract: K4J52324KI-HC08 K4J52324K K4J52324KI-HC14
    Text: Rev. 1.2, Mar. 2010 K4J52324KI 512Mb GDDR3 SGRAM I-die 136 FBGA with Halogen-Free & Lead-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4J52324KI 512Mb 10MAX k4j52324ki-hc1a K4J52324KI-HC08 K4J52324K K4J52324KI-HC14

    DDR2 x32

    Abstract: No abstract text available
    Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QC-B 512Mbit DDR2 x32

    136ball

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J55323QG-BC 256Mbit 136ball

    Untitled

    Abstract: No abstract text available
    Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QC-B 512Mbit

    K4J52324Qc

    Abstract: No abstract text available
    Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K4J52324QC 512Mbit K4J52324Qc

    DDR RAM 512M

    Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
    Text: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QC-B 512Mbit DDR RAM 512M K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A

    K4j52324qh-hj1a

    Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
    Text: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-Max

    K4j52324qh-hj1a

    Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
    Text: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q

    TH68N

    Abstract: TL50N t1n6 TRWL05 t24n T56N TR36 Resistor 1R0 K T82N TRWL06
    Text: TOKEN TRWL Chip Ceramic Inductors Wire-wound Ceramic Inductors Chip Open-Type Wire wound Ceramic Inductors - TRWL Series Token Wirewound Ceramic Inductor Simplifies Power Management Issues TRWL Series Preview The latest range of air core surface mount coils from Token is fully compliant with RoHS legislation and Token


    Original     		PDF 350MHz TH68N TL50N t1n6 TRWL05 t24n T56N TR36 Resistor 1R0 K T82N TRWL06

    TELEFUNKEN* U 111 B

    Abstract: T17N
    Text: TELEFUNKEN ELECTRONIC flic T> m fl'ISGD'lfci 3 ODDbObS H A L G G Z Z Z S '-/ '? T17N Typenrelhe/Type range_ T17N_ 200* 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U m m , U r r m Periodische Vorwärts- und Rückwärts-Spitzensperrspannung


    OCR Scan     		PDF HAL66 125CC. TELEFUNKEN* U 111 B T17N

    T17N

    Abstract: aeg t17n 25CC 180el
    Text: T17Na E G CORP öl Typenreihe/Type ränge T17N 200 * 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values 800 600 D E | ODa^MEb □ □□fc.DbS 7 J 900 1000 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung


    OCR Scan     		PDF T17Na 125CC. T17N aeg t17n 25CC 180el

    Untitled

    Abstract: No abstract text available
    Text: TELEFUNKEN EL E C T R O N I C T17N flic T> m fl'ISGD'lfci Typenrelhe/Type range_ T17N_ 200* 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U m m , U r r m Periodische Vorwärts- und Rückwärts-Spitzensperrspannung


    OCR Scan     		PDF 125cC.

    T2515

    Abstract: T17N
    Text: EUPEC SSE D 3M032T7 0000LS3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties H ochstzulässige W erte V d rm , V r r m 400 60 0 900 800 1000 1100 1200 M axim um perm issible values P eriodische V orw ärts- und


    OCR Scan     		PDF QQ00bS3 T2515 T17N

    T17N

    Abstract: kL11 KU11
    Text: E ^ -A KT IE NG ES EL LS CH AF T T17N fllC D 0 0 5 1 4 1 5 O D O b O b S 0 • AEGG 200 Typen reih e/Type range T17N E le k trisch e E ig enscha ften E lectrica l properties H ö ch stz u lä ss ig e W erte M axim um p erm issib le va lu e s U drmi U rrm Periodische Vorwärts- und


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EUPEC SSE D 3M032T7 0 0 0 0 L S 3 5ST » U P E C ' T17N 'T 1 2 £ > ~ & Typenreihe/Type range T 17 N Elektrische Eigenschaften Electrical properties Hochstzulässige Werte 400 600 900 1000 1100 1200 Itr m sm Itavm Dauergrenzstrom RMS on-state current average on-state current


    OCR Scan     		PDF 3M032T7 T-91-20 5x315