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    K4j52324qh-hj1a

    Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0
    Text: 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant May 2008 Revision 1.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC14 K4J52324QH-HJ K4J52324QH-HC12 GDDR3 SDRAM 256Mb K4J52324Q K4J52324QH-HC K4j52324qh-hj0

    K4j52324qh-hj1a

    Abstract: K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q
    Text: Preliminary 512M GDDR3 SDRAM K4J52324QH 512Mbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant March 2008 Revision 0.8 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4J52324QH 512Mbit 136FBGA 10MAX K4j52324qh-hj1a K4J52324QH-HJ08 K4J52324QH K4J52324QH-HC12 K4J52324Q

    k4w2g1646

    Abstract: GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3
    Text: Date : February. 9, 2009 Application Application Note Note Graphic Memory Dout Valid Window at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea R.O.K


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    PDF 800Mbps K4N51163QE-ZC 100MHz 166MHz K4J55323QI-BC 200MHz 252MHz K4N56163QG-GC k4w2g1646 GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3

    K4j52324qh-hj1a

    Abstract: K4J52324KI-HC1A K4J52324QH-HC12 K4J52324QH-HJ K4J52324QH K4J52324Q K4J52324KI-HC K4J52324K
    Text: Samsung Propriety Document# : PP_ 16Mx32 I-die_09101300 Product Planning & Application Eng.Team Memory Division SAMSUNG ELECTRONICS HWASUNG PLANT SAN #16 BANWOL-RI, TAEAN-EUP HWASUNG -CITY GYEONGGI-DO, KOREA Tel : 82-31-208-6319 Fax : 82-31-208-6799 Subject : 512Mb GDDR3 I-die description comparing to H-die


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    PDF 16Mx32 512Mb K4J52324QH-HJ7A/08 K4J52324KI-HC7A/08 K4J52324QH-HJ1A K4J52324KI-HC1A 800/700MHz K4J52324QH-HC12/14 K4J52324KI-HC12/14 K4j52324qh-hj1a K4J52324KI-HC1A K4J52324QH-HC12 K4J52324QH-HJ K4J52324QH K4J52324Q K4J52324KI-HC K4J52324K

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    samsung gddr5

    Abstract: k4w2g1646 GDDR5 K4J52324K K4J52324KI SAMSUNG GDDR3 GDDR5 application note samsung K4W1G1646D-EC gddr5 samsung K4J10324KE
    Text: Rev. 1.1, Nov. 2009 Graphic Memory Dout Valid Window at DLL-off mode A guide for user to use graphic memory at DLL-off mode Rev.1.1 1. Introduction The graphic industry keeps driving memory vendors to increase the memory frequency as fast as they can. Through continuous efforts, now GDDR3 hits over


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    PDF 166MHz. 200MHz 300MHz K4J52324QE-BC 220MHz 252MHz K4J52324KI-HC 350MHz K4J52324QH-HC K4W2G1646B-HC samsung gddr5 k4w2g1646 GDDR5 K4J52324K K4J52324KI SAMSUNG GDDR3 GDDR5 application note samsung K4W1G1646D-EC gddr5 samsung K4J10324KE

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0