orca
Abstract: signal path designer
Text: Application Note June 1997 ORCA FPGAs Integrate Datacom’s Paths Introduction Traditional datacom applications have largely relied on discrete logic components for such supporting circuits as data registers; first-in, first-outs FIFOs ; last-in, first-outs (LIFOs); control; and data paths.
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AP97-012FPGA
AP95-006FPGA)
orca
signal path designer
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marking t08i
Abstract: FR07 APC 2020 B I326 T08G A200000 ti01h BTS 7246 I342 T3.15A 250V
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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whatsoeveF0000
FFFFE000
SH7055
E8000
HS7055EDD81H
marking t08i
FR07
APC 2020 B
I326
T08G
A200000
ti01h
BTS 7246
I342
T3.15A 250V
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T06A-XX-XXX
Abstract: A 1266 PT06W PT06E-XX-XXX
Text: PT06 MS3116 SP06 straight plug TERMINATION ASSEMBLIES “ A " General Duty 'A '' (SR), “ E" (SR), " P ” (SR), M S /"F " Strain Relief “ W ” Cable Seal ‘P” P otting Boot “ E” Open Wire Seal N P T06A-XX-XXX (SR) SP 06A-XX-XXX (SR) P TG 06A-XX-XXX (SR)
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MS3116)
PT06A-XX-XXX
SP06A-XX-XXX
T06A-XX-XXX
PT06E-XX-XXX
SP06E
06E-XX-XXX
PT06P-XX-XXX
SP06P-XX-XXX
06P-XX-XXX
T06A-XX-XXX
A 1266
PT06W
PT06E-XX-XXX
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42S421
Abstract: I2758 uPD424210-60-G eZ 752 SCZ7 NEC Japan 424210-60 7PP4
Text: PRELIMINARY DATA SH EET_ / M O S IN T E G R A T E D CIRCUIT ¿/PD42S4210-60-G,424210-60-G 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional
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uPD42S4210-60-G
uPD424210-60-G
16-BIT,
pPD42S4210-60-G
424210-60-G
44-pin
40-pin
/PD42S4210-60-G
42S421
I2758
eZ 752
SCZ7
NEC Japan 424210-60
7PP4
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nec 424800
Abstract: ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M -BIT D Y N A M IC R A M 512 K -W O R D B Y 8-BIT, F A S T P A G E M O D E D e s c rip tio n The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability
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uPD42S4800
uPD424800
PD42S4800
28-pin
/iPD42S4800-60,
PD42S4800-70,
PD42S4800-80,
PD42S4800-10,
VP15-207-2
nec 424800
ic 2716
ic2716
PD42S4800-70
424800-10
424800-80
TXXXXXXXXXX
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6400L-A5G
Abstract: d4216400
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The /iPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs. The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/iPD42S16400L,
4216400L,
42S17400L,
4217400L
JUPD42S16400L,
42S17400L
6400L-A5G
d4216400
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wj da11 pin
Abstract: 22TCW
Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5116160B
16-bit.
1AD53-10-MAY95
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
wj da11 pin
22TCW
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Untitled
Abstract: No abstract text available
Text: “H Y U N D A I H Y 5 1 V 4 4 0 0 B S e r ie s 1 M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V4400B
HY51V4400B
1AC12-00-MAY94
HY51V4400BJ
HY51V4400BU
HY51V4400BSU
HY51V4400BT
HY51V4400BLT
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514400B
1AC11-00-MAY94
4b75Gflfl
HY514400BJ
HY514400BU
HY514400BSU
HY514400BT
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Untitled
Abstract: No abstract text available
Text: KM416V256B/BL/BLL CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM416V256B/BL7BL1 is a CMOS high speed 262,14 4 b it \ 16 D ynam ic R andom A cce ss M e m ory. Its d e s ig n is o p tim iz e d fo r iow p o w e r
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KM416V256B/BL/BLL
KM416V256B/BL7BL1
KM416V256B/BIVBLL-6
110ns
KM416V256B/BIVBLL-7
130ns
KM416V256B/BL7BLL-8
150ns
KM416V256B/B
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pw3sd
Abstract: No abstract text available
Text: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,
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HY514403B
1AC15-10-MAY95
HY514403BJ
HY514403BLJ
HY514403BSLJ
pw3sd
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Untitled
Abstract: No abstract text available
Text: D A TA SHEET NECE MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs w ith optional fast page mode and byte read/write mode.
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PD42S4260,
16-BIT,
/1PD42S4260.
iPD42S4260
PD424260
44-pin
40-pin
VP15-207-2
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Untitled
Abstract: No abstract text available
Text: CMOS 512K 64K x 8 Pseudo^Static RAM FEATURES • 66,536 x 8 bit organization • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Single -»5 V power supply • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX) Standby (CMOS level): 2.75 mW (MAX.)
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32-PIN
32-pin,
525-mil
32S0P
525-mH
LH5P864
I-------80
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plastite screw
Abstract: No abstract text available
Text: T DRAWING REVISIONS DOCUMENT REV APP DATE RELEASE FOR P RO D U C T I O N D.O. # 0 1 - 1 4 0 7 TO HOUSING I .464 [ 3 7 . ¡8] OVER NSULATOR <LOF 2 REF MATCH CPU DIE DRAFT 1 . 150 29.21] MTG HOLE . 166 [4.22] PCB MTG S U R F A C E TO T ER M I N A L ENDS PANEL
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P ,V P ,R V -1 2 V S L ,-1 5 V S L _1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM No«-0 ‘ ¿met'* r': DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using
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1048576-BIT
131072-WORD
M5M51
T08AFP
1048576-bit
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D482234
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations
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uPD482234
uPD482235
256K-WORD
jiPD482234
/iPD482235
/tPD482235
PP482234.
b427525
00b3flfl3
UPD482234.
D482234
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D482234
Abstract: D482234G5-70 d482235le D482235 icc20 sis 735 k7 TNC 24 mk 2 d482235g5-60 SES N 2402
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT //PD482234, 482235 2M-Bit Dual Port Graphics Buffer 256K-WORD BY 8-BIT D escription The jiPD482234 and /iPD482235 have a random access port and a serial access port. The random access port has a 2M-bit 262,144 words x 8 bits memory cell array structure. The serial access port can perform clock operations
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uPD482234
uPD482235
256K-WORD
jiPD482234
/iPD482235
/tPD482235
PP482234.
b427525
00b3flfl3
UPD482234.
D482234
D482234G5-70
d482235le
D482235
icc20
sis 735 k7
TNC 24 mk 2
d482235g5-60
SES N 2402
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dd417
Abstract: No abstract text available
Text: 'd a t a b427525 GÜM17SE ST2 « N E C E NEC sh eet MOS INTEGRATED CIRCUIT f juPD42S4260L, 424260L 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs with optional fast page mode
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b427525
M17SE
juPD42S4260L
424260L
16-BIT,
PD42S4260L,
424260L
/1PD42S4260L.
PD42S4260L
//PD424260L
dd417
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HY5117404A
Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
Text: “H Y U N D A I HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide
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HY5117404A
1AD38-10-MAY95
0D45DG
HY5117404AJ
HY5117404ASLJ
HY5117404AT
HY5117404AJ60
HY5117404ASLT60
AMO 0210
1A038
VH77
AHC28
HY5117404
hy5117
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