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    HY5117 Price and Stock

    SK Hynix Inc HY5117800BT-60A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY5117800BT-60A 3,000
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    SK Hynix Inc HY5117800BT-60

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY5117800BT-60 520
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    SK Hynix Inc HY5117804BJ-60

    IC,DRAM,EDO,2MX8,CMOS,SOJ,28PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5117804BJ-60 40
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    SK Hynix Inc HY5117400JC-70

    FAST PAGE DRAM, 4MX4, 70NS, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5117400JC-70 32
    • 1 $9
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    hyn HY5117400BT60

    4M X 4, FAST PAGE MODE Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY5117400BT60 54
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    HY5117 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY5117400C Hyundai 4Mx4, Fast Page mode Original PDF
    HY5117404B Hyundai 4Mx4, Extended Data Out mode Original PDF
    HY5117404BAT50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BAT60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BAT70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BJ50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BLJ50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BLJ60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BLJ70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BR50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BR60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BR70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BSLR50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BSLR60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BSLR70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BSLT50 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BSLT60 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF
    HY5117404BSLT70 Hyundai 4M x 4-Bit CMOS DRAM with Extended Data Out Scan PDF

    HY5117 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM532810BM

    Abstract: HY5117400B HYM532810B HYM532810BMG
    Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling


    Original     		PDF HYM532810B 8Mx32 8Mx32-bit HY5117400B HYM532810BM HYM532810BMG 72-Pin

    HY5117404B

    Abstract: No abstract text available
    Text: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM536A814B 8Mx36 4Mx36-bit HY5117404B HYM536A814BM HYM536A814BMG 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117404B HY5116404B

    HY5117404C

    Abstract: HY5117404CJ
    Text: HY5117404C,HY5116404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117404C HY5116404C HY5117404CJ

    HY5117404C

    Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
    Text: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM532414C 4Mx32 4Mx32-bit HY5117404C HYM532414CM HYM532414CMG 72-Pin DEC-97

    HY5117404C

    Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
    Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF


    Original     		PDF HYM532814C 8Mx32 8Mx32-bit HY5117404C HYM532814CM HYM532814CMG 72-Pin HYM532814

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic R A M organized 4,194,304 x 4-bit. The HY5117400A utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 117400A 1AD27-10-MAY9S HY5117400AJ HY5117400AT Y5117400ASLT HY5117400AR

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5117410 1AD06-10-APR93 HY5117410JC HY5117410UC HY5117410TC HY5117410LTC

    HYM53

    Abstract: No abstract text available
    Text: • HYUNDAI HYM536A810A M-Series 8M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A81OA is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of eighteen HY5117400A in 24/26 pin TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM536A810A 36-bit HYM536A81OA HY5117400A HYM536A81OAM/ASLM HYM536A810AMG/ASLMG HYM536A800A/ASL 1CF16-10-AUG95 HYM53

    HYM536410MG

    Abstract: No abstract text available
    Text: HYM536410 M -Series •HYUN DAI 4M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling


    OCR Scan     		PDF HYM536410 36-blt 36-bit HY5117400 HY514100A HYM53641OM/LM HYM536410MG/LMG 1CE06-20-MAV94 HYM536410MG

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532224A 32-bit HY5117804B HYM532224AE/ASLE/ATE/ASLTE HYM532224AEG/ASLEG/ATEG/ASLTEG 171M1N DD054M 1CE13-10-0EC94

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT

    Untitled

    Abstract: No abstract text available
    Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG -0004gOQ 4b750flfl D005fl51 1EC07-10-JAN96

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y 5 1 1 7 8 1 0 S e r ie s 2 M x 8-bit CMOS DRAM with WPB DESCRIPTION The HY5117810 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5117810 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117810 HY5117810 1AD10-10-MAY94 HY5117810JC HY5117810SLJC HY5117810TC HY5117810SLTC

    5117404

    Abstract: No abstract text available
    Text: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 117404A HY5117404A HY5117404A 1A038-10-MAY95 DD45DD HY5117404AJ HY5117404ASLJ HY51174CMAT 5117404

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM53221OA 32-bit HYM53221 HY5117800B HYM53221OAE/ASLE/ATE/ASLTE 4b750Afl 1CE13-10-DEC94 HYM532210A

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117100 1AD04-10-APR93 HY5117100JC HY5117100UC HY5117100TC HY5117100LTC HY5117100RC

    HYM532810

    Abstract: HY5117400 HYM53
    Text: ••HYUNDAI HYM532810 M-Series 8M X 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532810 is a 8M x 32-bit Fast page mode C M O S DRAM module consisting of sixteen HY5117400 in 24/28 pin S O J on a 72 pin glass-epoxy printed circuit board. 0.22fi? decoupling capacitor is mounted for each DRAM,


    OCR Scan     		PDF HYM532810 32-blt 32-bit HY5117400 HYM532810M/LM HYM532810MG/LMG 1CF02-10-JUN94 4b75D 0D03577 HYM53

    HYM532414

    Abstract: HY5117404
    Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


    OCR Scan     		PDF HYM532414 32-bit HY5117404A HYM532414TNG/SLTNG A0-A10) DQ0-DQ31) 1CE13-10-DEC94 YM532414 HY5117404

    hym536810

    Abstract: HYM53
    Text: HYM536810 M-Series •HYUNDAI 8M x 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810 is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400 in 24/28 pin SOJ orTSOP and eight HY514100A in 20/26 pin SOJ orTSOP II on a 72 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM536810 36-blt 36-bit HY5117400 HY514100A 22fiF HYM53681OM/LM/TM/LTM HYM53681OMG/LMG/TMG/LTMG HYM53681OT/LT HYM53

    M53241

    Abstract: No abstract text available
    Text: HYM532410 N-Series •HYUN DAI 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM Module consisting of eight HY5117400A in 24/26 pin TSOPII on a 72 pin Zig Zag Dual tabs glass-epoxy printed circuit board. 0 22^F decoupling capacitor is


    OCR Scan     		PDF HYM532410 32-bit HY5117400A HYM532410TNG/SLTNG 32va24 004J1 1DE02-10-AUG95 M53241

    HY5117400A

    Abstract: No abstract text available
    Text: ••H Y U N D A I HY5117400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit, The HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A 1AD27-10-M HY5117400AJ HY5117400ASU HY5117400AT HY5117400ASLT