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    VH77 Search Results

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    VH73

    Abstract: VL222 VH152 Vl152 fch 2188 vh66 VL77 VL129 VH226 VL223
    Text: . S6C0671 8 BIT 384 CHANNEL TFT-LCD SOURCE DRIVER February. 2000. Ver. 0.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express


    Original     		PDF S6C0671 S6C0671 VGMA10 VGMA18 VGMA18 VH73 VL222 VH152 Vl152 fch 2188 vh66 VL77 VL129 VH226 VL223

    CT34

    Abstract: lm 4382 F 7389 11-B K210
    Text: 4+1+ 503316(7389(! 43:3;-3 (!$$< !"#$%&'(')*+,-+.,(/0*1*,2*,3 43?:)2@12*. O>+$P/:-LM<$'7"?(;+8$)>+$'7"?+*$>(=>$'+75"7E&*%+$ "5$L=+7+$Q@8)+E8R$'>")";(";+$)+%>*"6"=@$(*$&$?+7@$ '7&%)(%&6,$%"8)G+55+%)(?+$'&%N&=+.$O>+$P/:-G8+7(+8$ 5+&)H7+8$>(=>$6(*+&7()@$&*;$6"#$%&'&%()&*%+$"?+7$&$


    Original     		PDF

    VH73

    Abstract: VL222 dx3 308 VL221 VL109 VL83 vl224 VH102 VH165 VL205
    Text: . S6C0671 8 BIT 384 CHANNEL TFT-LCD SOURCE DRIVER February. 2000. Ver. 0.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express


    Original     		PDF S6C0671 S6C0671 VGMA10 VGMA18 VH73 VL222 dx3 308 VL221 VL109 VL83 vl224 VH102 VH165 VL205

    23/yamaha dx7

    Abstract: VL183
    Text: . S6C0670 8 BIT 384 / 402 CHANNEL TFT-LCD SOURCE DRIVER March. 2000. Ver. 1.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express


    Original     		PDF S6C0670 S6C0670 VGMA16 23/yamaha dx7 VL183

    vh73

    Abstract: VH222 VL116 VH80 VL248 specifications of ic 1408 VL139 VH250 VH81 VH165
    Text: . S6C0670 8 BIT 384 / 402 CHANNEL TFT-LCD SOURCE DRIVER March. 2000. Ver. 1.0 Prepared by: Myoung-Sik, Suh mail to: mssuh@samsung.co.kr Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, without the express


    Original     		PDF S6C0670 S6C0670 VGMA16 vh73 VH222 VL116 VH80 VL248 specifications of ic 1408 VL139 VH250 VH81 VH165

    A109D

    Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
    Text: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400B 51V17400B 0260X68040) 157BSC 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSD A109D max3843 lcd hyundai WWD 3P hyundai hy 555

    HY5118160JC70

    Abstract: HY5118160 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34
    Text: HY5118160 Series • • H Y U N D A I 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. 0-629CB1 10-2g2) 016B3 000M750 HY5118160JC70 hy5118160jc 4b75 D014G ms3417 hy5118160jc-70 KS-5 pc145 016B34

    HY5116404

    Abstract: No abstract text available
    Text: HY5116404A Series •HYUNDAI 4M X 4-b it C M O S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116404A 1AD37-10-MAY95 HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5116404

    phct

    Abstract: baw16 OCB-15 wpp3 gc137 mcag1 d0ji
    Text: H Y 5 1 V 4 2 6 0 B S e r ie s 256K X 16-bit CMOS DRAM with 2CAS " H Y U N D A I DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve


    OCR Scan     		PDF HY51V4260B 16-bit 400mil 40pin 40/44pin 4fci750Ã 1AC26-10-MAY95 phct baw16 OCB-15 wpp3 gc137 mcag1 d0ji

    512Kx1 DRAM

    Abstract: No abstract text available
    Text: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4100B 304x1-bit. HY51V4100B Schottk014 27J8S 50flfl 1AC10-10-MAY95 512Kx1 DRAM

    HY5118164B

    Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
    Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118164B 16-bit. Q1480C3 0JJ00 1AD58-10-MA HY5118164BJC HY5118164BJC60 V074 HY5118164BSLRC JD 16 CFt 450 HT

    WP-13

    Abstract: ta22a DE456 1A039
    Text: Y Trt I II N i l A l u n u m 4M X H Y 5 1 V 1 6 4 0 4 A S e r ie s 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY51V16404A is the new generation and fast dynamic RAM organized 4,194.304 x 4-bit. The HY51V16404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16404A capa590) 1AD39-KMMAY95 HY51V16404AJ HY51V16404ASLJ HY51V16404AT 51V16404ASLT WP-13 ta22a DE456 1A039

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY51V4264B Series 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY51V4264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design technique to achieve fast


    OCR Scan     		PDF HY51V4264B 16-bit 400mil 40pin 40/44pin 4b750flfl 00G43D3

    Ck37

    Abstract: No abstract text available
    Text: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A families075 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT 4400ALT Ck37