AN-994
Abstract: IRFR210 IRFU210
Text: PD-9.526C International S Rectifier IRFR210 IRFU210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR210 Straight Lead (IRFU210) Available in Tape & Reel Fast Switching Ease of Paralleling
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IRFR210
IRFR210)
IRFU210)
AN-994
IRFR210
IRFU210
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1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
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IRFZ20
O-220
IRFZ22
IRFZ30
IRFZ32
5TO-220
IRL510
1rfz44
MFE9200
1rfz30
IRFZ12
1RFZ22
VN10LP
irfu9212
irfu9220
irfu9222
irfu9022
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10M45s
Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
Text: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35
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O-251
10M45S
10M35
35M35
10M45s
IXCP10M45S
78L05 D-PAK
of 78l05
TL 78l05
78L05 TO-220
IXCP35M35
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Untitled
Abstract: No abstract text available
Text: International ioR Rectifier IRLR024 IRLU024 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating Surface Mount IRLR024 Straight Lead (IRLU024) Available in Tape & Reel Logic-Level Gate Drive PD-9.625A 46S5452 DDlS'iSfl S7fl * I N R INTERNATIONAL R E C T IF IE R
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IRLR024
IRLU024
IRLR024)
IRLU024)
46S5452
150KQ
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Untitled
Abstract: No abstract text available
Text: International i“R Rectifier 4Ö55452 00 15 7 4 2 34=ï • INR PD-9.637C IRFRC20 IRFUC20 HEXFET Power M O SFET • • • • • • • INTERNATIONAL Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFRC20 Straight Lead (IRFUC20) Available in Tape & Reel
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IRFRC20
IRFUC20
IRFRC20)
IRFUC20)
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G3N60B
Abstract: No abstract text available
Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high
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HGTD3N60B3,
HGTD3N60B3S,
HGT1S3N60B3,
HGT1S3N60B3S,
HGTP3N60B3
GTD3N60B3S,
HGT1S3N60B3S
HGTP3N60B3
115ns
1-800-4-HARRIS
G3N60B
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F10P03L
Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
Text: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac tured using the MegaFET process. This process, which uses
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RFD10P03L,
RFD10P03LSM,
RFP10P03L
1-800-4-HARRIS
F10P03L
10P03L
p-channel mosfet BL
Harris Semiconductor Integrated Circuits
N10T
TC227
RFD10P03L
RFD10P03LSM
RFD10P03LSM9A
RFP10P03L
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Untitled
Abstract: No abstract text available
Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model
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HUF76129D3,
HUF76129D3S
O-252AA
T0-252AA
330mm
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Untitled
Abstract: No abstract text available
Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)
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Mfl55452
IRFR224
IRFU224
IRFR224)
IRFU224)
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irfb220
Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
Text: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111
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1HFPG50
O-247AC
T0-247AC
O-251AA
IRFR9222
O-243AA
IRFU010
irfb220
TO-251AA
251AA
251C
IRFR020
IRFR120
IRFR121
IRFR210
IRFR212
T0-251
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1RFZ30
Abstract: 1rfz44 IRFZ12 IRFZ30 IRF145 1RFZ22 IRFZ32 IRFU020 1RFZ20 IRFU120
Text: - 266 - m tt € f ft A V Vd s £ Vg s Id le s s Pd Vg s t h le s s t T a = 2 5 cG ) I d (on) R o s (o n ) Vd :s = 14 & C is s g fs Coss C rss * /C H Vdg m in * /CH max b B * ty p (0 ) Vg s (V ) *ty p Id (A ) Vg s (V ) * ty p Id (A ) (* ty p ) (* ty p )
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IRFU020
T0-251AA
1RFU022
O-251AA
O-220
IRL510
IRL511
1RL520
1RFZ30
1rfz44
IRFZ12
IRFZ30
IRF145
1RFZ22
IRFZ32
1RFZ20
IRFU120
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Untitled
Abstract: No abstract text available
Text: 4055452 International S Rectifier OOlSbMO t I S • PD-9.701A IRFR014 IRFU014 HEXFET Power M O S FE T • • • • • • • INR Dynamic dv/dt Rating Surface Mount IRFR014 Straight Lead (IRFU014) Available in Tape & Reel Fast Switching Ease of Paralleling
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IRFR014)
IRFU014)
IRFR014
IRFU014
T0-251AA
VDS25
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Untitled
Abstract: No abstract text available
Text: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes
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RURD610CC,
RURD615CC,
RURD620CC,
RURD610CCS,
RURD615CCS,
RURD620CCS
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Untitled
Abstract: No abstract text available
Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,
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RFD8P06LESM,
RFP8P06LE
0-300i2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4.4A/90~ioov 2.38MAX .094 2.38MAX 1.094) FEATURES • TO-251AA Case n »TO-252AA Case, Surface Mount Device 6.22(.245) 53te 5) 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop ¡N O M IN A L
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4VQ09CT
4VQ10CT
4VQ09CTF
4VQ10CTF
38MAX
O-251AA
O-252AA
58MAX|
58MAX
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TO-251AA
Abstract: ipak
Text: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current
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O-251A
IRFU014
IRFU024
IRFU110
IRFU120
IRFU210
IRFU220
IRFU214
IRFU224
IRFU310
TO-251AA
ipak
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IRFR9110
Abstract: IRFU9110 AN-994 PN 1204 1RFR9110
Text: PD-9.519E International S Rectifier IRFR9110 IRFU9110 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9110 Straight Lead (IRFU9110) Available in Tape & Reel P-Channel Fast Switching V DSS = - 1 0 0 V ^D S (on ) - 1
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IRFR9110
IRFR9110)
IRFU9110)
IRFU9110
IRFR9110
IRFU9110
AN-994
PN 1204
1RFR9110
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irf0014
Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
Text: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123
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QQ1Q554
IRF0024
IRFD025
IRF0014
IRF0015
IRFD123
IRF0113
IRFD120
IRFD110
IRF0223
IRF09014
IRF0220
IRF09120
INTERNATIONAL RECTIFIER 9439
IRF0110
INTERNATIONAL RECTIFIER 9516
irf09024
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Untitled
Abstract: No abstract text available
Text: HUF76121D3, HUF76121D3S Semiconductor Data Sheet 20A, 30 V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76121D3,
HUF76121D3S
O-252AA
T0-252AA
330mm
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Untitled
Abstract: No abstract text available
Text: HAJims HPLR3103, HPLU3103 S e m ico n d ucto r 7 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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HPLR3103,
HPLU3103
T0-252AA
330mm
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR/U5505
IRFR5505)
IRFU5505)
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Untitled
Abstract: No abstract text available
Text: HAJtms S RFD16N02L, RFD16N02LSM Semiconductor y 16A, 20V, 0.022É1, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of
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RFD16N02L,
RFD16N02LSM
RFD16N02L
RFD16N02LSM
T0-252AA
330mm
EIA-481
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1RFU120
Abstract: 523D AN-994 IRFR120 IRFU120 11NU LS77
Text: PD-9.523D International E§ ] Rectifier IRFR120 IRFU120 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR120 Straight Lead (1RFU120) Available in Tape & Reel Fast Switching Ease of Paralleling
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IRFR120
IRFR120)
1RFU120)
1RFU120
523D
AN-994
IRFU120
11NU
LS77
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IRF460 in TO220
Abstract: IRF09110 IRF448 of IRF9540 and IRF540 irf460 switching irf460 to247 IRF250 TO-247 IRF244 Application of irf250 IRFD9120 N CHANNEL
Text: HEXFET Power MOSFETs Products From IR FullPak N-Channel FullPak Fully-isolated HEXFETs from the heatsink/enclosure , then the FullPak is for you. Until now, semiconductors were insulated from grounded heatsinks with insulating w ashers and nylon screws. Improper Installation of
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T0-240AA
IRF460 in TO220
IRF09110
IRF448
of IRF9540 and IRF540
irf460 switching
irf460 to247
IRF250 TO-247
IRF244
Application of irf250
IRFD9120 N CHANNEL
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