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    Epoxy Technology Inx EPO-TEK 353ND BI-PAKS 2.5 GRAM (25 PACKS)

    25 x Bi-packs / 2.5 gram (1 box)
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    DigiKey EPO-TEK 353ND BI-PAKS 2.5 GRAM (25 PACKS) Bulk 269 1
    • 1 $250
    • 10 $225
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    Epoxy Technology Inx EPO-TEK 353ND 4 GRAM BI-PAK

    25 x Bi-packs / 4 gram (1 box)
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    DigiKey EPO-TEK 353ND 4 GRAM BI-PAK Bulk 229 1
    • 1 $250
    • 10 $225
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    Vicor Corporation VI-PAK1-CUU

    VI-PAK1-CUU 300V/40V 12V 200W
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    DigiKey VI-PAK1-CUU Bulk
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    Infineon Technologies AG CY3230-28PDIP-AK

    KIT FOOT FOR 28-DIP
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    DigiKey CY3230-28PDIP-AK Bulk 1
    • 1 $42.5
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    Vishay Intertechnologies IRFU024PBF

    MOSFETs 60V N-CH HEXFET MOSFET I-PAK
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    TTI IRFU024PBF Tube 4,950 75
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    IPAK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPAK STMicroelectronics IPAK - ASD & DISCRETES - TOURS Original PDF

    IPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    POWER MOSFET 4600

    Abstract: 1A 700V MOSFET
    Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original     		PDF TSM2N70 O-220 O-251 O-252 TSM2N70 POWER MOSFET 4600 1A 700V MOSFET

    TSM2NB60

    Abstract: mosfet 600V 2A
    Text: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


    Original     		PDF TSM2NB60 O-251 O-252 TSM2NB60CH 75pcs mosfet 600V 2A

    TSC5304EDCP

    Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
    Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		PDF TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251

    A12 diode

    Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
    Text: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This


    Original     		PDF TSM3N90 O-220 ITO-220 O-251 O-252 TSM3N90 TSM3N90CH TSM3N90CP TSM3N90CZ O-251 A12 diode MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v

    D150*h02l

    Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
    Text: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark


    Original     		PDF STD150NH02L-1 STD150NH02L STD150NH02L STD150NH02L-1 D150*h02l D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l

    4n62k

    Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
    Text: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3


    Original     		PDF STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 O-220FP, O-220 STF4N62K3 STFI4N62K3 STI4N62K3 4n62k 4N62 i-pak Package zener diode 4N62K3

    2N62K3

    Abstract: STD2N62K3 STP2N62K3
    Text: STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 Ω, 2.2 A SuperMESH3 Power MOSFET in D²PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes VDSS RDS on max ID PTOT 3 2 3 STB2N62K3


    Original     		PDF STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 O-220FP, O-220 STB2N62K3 STD2N62K3 STF2N62K3 2N62K3 STP2N62K3

    b01619

    Abstract: D6NM60N
    Text: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N


    Original     		PDF STx6NM60N O-220, O-220FP, STB6NM60N STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N O-220 b01619 D6NM60N

    STP13NM60

    Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
    Text: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N


    Original     		PDF STx13NM60N O-220FP, O-220, O-247 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N STP13NM60 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 MJ430

    Untitled

    Abstract: No abstract text available
    Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without


    Original     		PDF TSM2N60 O-220 O-251 O-252 TSM2N60

    STD6NF10

    Abstract: No abstract text available
    Text: STD6NF10 N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STD6NF10 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.250 Ω 6A TYPICAL RDS(on) = 0.22 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE


    Original     		PDF STD6NF10 O-251) O-252) O-251 O-252 STD6NF10

    D5NM60

    Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
    Text: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw


    Original     		PDF STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 O-220/TO-220FP/DPAK/IPAK STP8NM60 STD5NM60 O-220 D5NM60 p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60

    Untitled

    Abstract: No abstract text available
    Text: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package


    Original     		PDF STD100N3LF3 STU100N3LF3 \TEMP\SGST\STU100N3LF3 22-Aug-2007

    STD5NE10L

    Abstract: No abstract text available
    Text: STD5NE10L  N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 5 A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD5NE10L O-251 STD5NE10L

    DSA00104443

    Abstract: STD4NB25
    Text: STD4NB25 N - CHANNEL 250V - 0.95Ω - 4A - DPAK/IPAK PowerMESH MOSFET PRELIMINARY DATA ν ν ν ν ν ν TYPE VDSS R DS on ID STD4NB25 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.95 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STD4NB25 DSA00104443 STD4NB25

    STGD7NB60H-1

    Abstract: No abstract text available
    Text: STGD7NB60H-1 N-CHANNEL 7A - 600V IPAK PowerMESH IGBT TYPE V CES V CE sat IC STGD7NB60H-1 600 V < 2.8 V 7A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGD7NB60H-1 O-251) O-251 STGD7NB60H-1

    TSC5302DCH

    Abstract: TSC5302DCP DIODE G14
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		PDF TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH DIODE G14

    Untitled

    Abstract: No abstract text available
    Text: STDLED525, STFILED525, STPLED525, STULED525 N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes VDS 3 1 RDS on max ) s ( ct STDLED525 DPAK 1 2 STFILED525 3 STPLED525


    Original     		PDF STDLED525, STFILED525, STPLED525, STULED525 O-220 STDLED525 STFILED525 STPLED525 DocID024423

    Untitled

    Abstract: No abstract text available
    Text: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		PDF TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251

    Untitled

    Abstract: No abstract text available
    Text: AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high


    Original     		PDF AOD403/AOI403 AOD403/AOI403 O251A

    95N3LLH6

    Abstract: 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L
    Text: STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 30 V 0.0042 Ω STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω


    Original     		PDF STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 O-220 STP95N3LLH6 STB95N3LLH6 95N3LLH6 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L

    F7NM80

    Abstract: D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80
    Text: STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS on ID STD7NM80 800 V < 1.05 Ω 6.5 A STD7NM80-1 800 V < 1.05 Ω 6.5 A STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80


    Original     		PDF STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 O-220, O-220FP, STD7NM80 STF7NM80 F7NM80 D7NM8 D7NM80 P7NM80 STD7NM80 TO-251 footprint STD7NM80-1 STP7NM80 STF7NM80

    75N3LLH6

    Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
    Text: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V


    Original     		PDF STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S STU75N3LLH6 75N3LLH6 STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint

    STD150N3LLH6

    Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
    Text: STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω


    Original     		PDF STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 O-220 STP150N3LLH6 STD150N3LLH6 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6