RFD16N02LSM Search Results

RFD16N02LSM Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
RFD16N02LSM		Harris Semiconductor	16A, 20V, 0.022 ohm, N-Channel Logic Level Power MOSFET		Original	PDF
RFD16N02LSM		Intersil	16A, 20V, 0.022 ?, N-Channel, Logic Level, Power MOSFET		Original	PDF

RFD16N02LSM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AN7254 Abstract: AN7260 AN9321 AN9322 RFD16N02L RFD16N02LSM RFD16N02LSM9A Text: RFD16N02L, RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of	Original	PDF	RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM AN7254 AN7260 AN9321 AN9322 RFD16N02LSM9A
RFD16N02L Abstract: RFD16N02LSM RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322 Text: RFD16N02L, RFD16N02LSM S E M I C O N D U C T O R 16A, 20V, 0.022Ω, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of	Original	PDF	RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM 1-800-4-HARRIS RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
SSH6N80 Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L	Original	PDF	BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
fqp60n06 Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
cq 724 g diode Abstract: No abstract text available Text: RFD16N02L, RFD16N02LSM HARRIS S E M I C O N D U C T O R 16A, 20V, 0.022Q, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of	OCR Scan	PDF	RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM 1-800-4-HARR cq 724 g diode
Untitled Abstract: No abstract text available Text: HAJtms S RFD16N02L, RFD16N02LSM Semiconductor y 16A, 20V, 0.022É1, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of	OCR Scan	PDF	RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM T0-252AA 330mm EIA-481