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Comet Group T0218 INTERIOR TEMP WITH 0-10V OUTPUT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	T0218	Bag			1	1 $244 10 $244 100 $244 1000 $244 10000 $244	Buy Now
Samtec Inc HLT-0218-T-R .100" SCREW MACHINE TERMINAL ARR Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HLT-0218-T-R	Tube			12	1 - 10 - 100 $8.85917 1000 $8.85917 10000 $8.85917	Buy Now
Master Electronics	HLT-0218-T-R					1 - 10 $9.58 100 $5.55 1000 $3.87 10000 $2.95	Buy Now
Sager	HLT-0218-T-R				1	1 $7.44 10 $6.88 100 $4.96 1000 $4.53 10000 $4.53	Buy Now
Bourns Inc 4816P-T02-183 RES ARRAY 15 RES 18K OHM 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4816P-T02-183	Tube			2,000	1 - 10 - 100 - 1000 - 10000 $0.6351	Buy Now
Avnet Americas	4816P-T02-183	Tube		7 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.61672	Buy Now
Newark	4816P-T02-183	Bulk			2,000	1 - 10 - 100 - 1000 $0.74 10000 $0.682	Buy Now
RS	4816P-T02-183	Bulk		10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.91	Get Quote
Master Electronics	4816P-T02-183					1 - 10 - 100 - 1000 $0.726 10000 $0.664	Buy Now
Bourns Inc 4816P-T02-183LF RES ARRAY 15 RES 18K OHM 16SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	4816P-T02-183LF	Tube			2,000	1 - 10 - 100 - 1000 - 10000 $0.55658	Buy Now
Avnet Americas	4816P-T02-183LF	Tube		7 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.54047	Buy Now
Newark	4816P-T02-183LF	Bulk			2,000	1 - 10 - 100 - 1000 $0.649 10000 $0.598	Buy Now
RS	4816P-T02-183LF	Bulk		10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.8	Get Quote
Avnet Abacus	4816P-T02-183LF			10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	4816P-T02-183LF					1 - 10 - 100 - 1000 $0.636 10000 $0.582	Buy Now
Vishay Sfernice RCMT0218200BES03 SFERNICE FIXED RESISTORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RCMT0218200BES03	Bag			10	1 - 10 $75.921 100 $75.921 1000 $75.921 10000 $75.921	Buy Now

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T0218 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
T0218		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF

T0218 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DA 2688 Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688 Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055	OCR Scan	TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688	PDF
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N	PDF
Q400414 Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•	OCR Scan	-T-25-0Ã MAC974 MAC976 MAC97AÂ MAC97A6 MAC97A8 SC92B T0218AC BTB41200B Q400414 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M	PDF
Halbleiterbauelemente DDR Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft Text: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK	OCR Scan		PDF
S299 Abstract: No abstract text available Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDF-4F6-001 REV: 1 Page: 1/5 0.39" Quadruple Digit Displays ELF-4F6VGWB/S299 PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ●	Original	CDDF-4F6-001 ELF-4F6VGWB/S299 30min S299	PDF
Untitled Abstract: No abstract text available Text: EVERLIGHT ELECTRONICS CO.,LTD. CDLE-353-003 Device Number : REV.: 2 Page: 1/4 2.0*3.2mm Rectangle Type LED Lamps PART NO. : ECN : 3534GT █ Features : █ ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust Package Dimensions:	Original	CDLE-353-003 3534GT 30min	PDF
NTE374 Abstract: NTE383 switch audio NTE398 NTE377 NTE373 NTE387 NTE38 Text: Maximum Breakdown Voltage Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) lypical Freq. (MHZ) Case Style Diag. No. Maximum Collector Current (Amps) •c	OCR Scan	387MP 407-512MHZ) 407-512MH T0218 T0218 NTE374 NTE383 switch audio NTE398 NTE377 NTE373 NTE387 NTE38	PDF
Untitled Abstract: No abstract text available Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic	OCR Scan	Afl72fln	PDF
Untitled Abstract: No abstract text available Text: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUZ358 T0218AA; T-39-13 T0014flSS	PDF
Untitled Abstract: No abstract text available Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is	OCR Scan	BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS	PDF
buz349 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349	PDF
T1C263M Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006 Text: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5	OCR Scan	MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 SC92B SC92C SC92D SC92M T1C263M q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006	PDF
Untitled Abstract: No abstract text available Text: N ANER PHI L I P S / D I S CR E T E bbSBTBl 0 0 1 4 7 7 3 4 ObE D HJZ330 T - 31-/3 PowerMOS transistor May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	HJZ330 T0218AA; BUZ330 T-39-13 BUZ33U	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	T0218AA BUZ331 T-39-13 bb53c bb53T31 00147fib	PDF

BUZ357 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	LLS3T31 BUZ357 T-39-13 D014fl4c BUZ357	PDF
transistor et 455 Abstract: transistor et 454 Text: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	0D147bb T0218AA; 00147bT T-39-13 BUZ351 001477E transistor et 455 transistor et 454	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53131 BUZ310 T0218AA; T-39-11 bbS3T31 T-39-H	PDF
NTE2314 Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo	OCR Scan	NTE397) NTE396) NTE375) T0220 T0218 NTE2314) NTE2306) NTE2314 NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ	PDF
DA 2688 Abstract: tip35c equivalent transistor DA 2688 C2688 Text: t é x a s ~i n s t r bâ Ï0PT03- 8 9 6 1 7 2 6 TEXA S IN S T R DTIa^biTat, ooabVTS s OPTO 7 62C 3 6 7 9 2 TIP35JIP35A JIP 3 5 B , TIP35C, TIP35D, TIP35E, TIP35F N-P-N SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed for Complementary Use With TIP36 Series	OCR Scan	0PT03- TIP35JIP35A TIP35C, TIP35D, TIP35E, TIP35F TIP36 T0-218AA TIP35, TIP35A, DA 2688 tip35c equivalent transistor DA 2688 C2688	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
Untitled Abstract: No abstract text available Text: EVERLIGHT ELECTRONICS CO.,LTD. CDLE-353-006 Device Number : REV.: 3 Page: 1/4 2.0*3.2mm Rectangle Type LED Lamps PART NO. : ECN : 3534YT █ Features : █ ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust Package Dimensions:	Original	CDLE-353-006 3534YT 30min	PDF
30343 Abstract: TIP55A p6020 tip55 30343 power Text: TEXAS INSTR -COPTO} b5 DE \|flcit117Eb 003bfl3b 8 9 & 1 7 2 6 TEXAS INSTR COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS T - ' . 5 3 ~ * l{ R EV ISED O CTOBER 1984 • Min V B R )C E O °f 2 50 V to 4 0 0 V • 50 W at 1 0 0 ° C C ase Temperature	OCR Scan	117Eb 003bfl3b TIP55A, TIP56A, TIP57A, TIP58A T0-218AA 30343 TIP55A p6020 tip55 30343 power	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor • bb53T31 0014808 6 BUZ308 T- 3^-tf ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	bb53T31 BUZ308 T0218AA; T-39-11 bb53TBl	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • tbS3T31 00147T4 1 BU Z385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor	OCR Scan	tbS3T31 00147T4 Fig25Â BUZ385 T-39-13 bb53TBl	PDF

T0218 Search Results

T0218 Price and Stock

Comet Group T0218

Samtec Inc HLT-0218-T-R

Bourns Inc 4816P-T02-183

Bourns Inc 4816P-T02-183LF

Vishay Sfernice RCMT0218200BES03

T0218 Datasheets (1)

T0218 Datasheets Context Search

DA 2688

MC68B21CP

Q400414

Halbleiterbauelemente DDR

S299

Untitled

NTE374

Untitled

Untitled

Untitled

buz349

T1C263M

Untitled

Untitled

BUZ357

transistor et 455

Untitled

NTE2314

DA 2688

YTA630

Untitled

30343

Untitled

Untitled