e26a
Abstract: E148-5V E149-12V E149-5V E150-5V E151-12V E151-5V E25A E304-12V E304-5V
Text: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue
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880nm,
940nm
880nm
100nA
e26a
E148-5V
E149-12V
E149-5V
E150-5V
E151-12V
E151-5V
E25A
E304-12V
E304-5V
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E150-5V
Abstract: infrared 660nm* 20mw E151 E148-5V E149-12V E149-5V E151-12V E151-5V E304-12V E304-5V
Text: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue
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880nm,
940nm
880nm
300mcd
660nm
15mcd
590nm
E150-5V
infrared 660nm* 20mw
E151
E148-5V
E149-12V
E149-5V
E151-12V
E151-5V
E304-12V
E304-5V
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SG211V
Abstract: No abstract text available
Text: KODEIMSHI CORP. PHOTOINTERRUPTERS SG-211V DIMENSIONS Unit The S G -2 1 1 V photointerrupter type.combines h ig h - o u t p u t high-performance GaAs IRED w i t h standard high s e n s itiv e Cathode o— i f t phototransistor. l i t Ä : mm - 1 { - H Anode o— 1
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SG-211V
SG211V
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VTT1222W
Abstract: VTT1223W
Text: SbE D • BOBGbDT 0 0 0 1 1 7 0 .025" NPN Phototransistors VTT1222W, 23W Clear T-1 3/4 Plastic Package E G 8c 377 » V C T T -4 1 -6 1 G VACTEC PACKAGE DIMENSIONS inch mm 1.0 0 CASE ZBW T-1 3/4 (WIDE ANGLE) CHIP TYPE: 25T ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION
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OCR Scan
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303GbCH
D0Q117G
VTT1222W,
T-41-61
VTE12xxW
400fc
VTT1222W
VTT1223W
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Untitled
Abstract: No abstract text available
Text: 3 G3 D b D T GDDllfiS ÔTÛ 5L.E D .050" NPN Phototransistors IVCT V T T 9 1 12, 9113 Epoxy Lensed TO-106 Ceramic Package T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .50 (1 2 .7 ) .2 1 0 (5 .3 3 ) .065 (2 .1 6 ) .075 (1 .9 0 ) .100 (2 .5 4 ) 1 EMITTER
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O-106
O-106
400fc
VTT9112
VTT9113
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WSS ceramic package
Abstract: ST-1CL5 ST-315 stroboscop HI 1285-6
Text: T /^ _ DETECTORS ^ L \ PHQTOTRAMSISTQRS T ' £ * 1 ST-315 S T -3 1 5 li, DIMENSIONS (U n it:m m ) T 'IE — )l' K S t i t ¡ S i i J S « V <J =J > 7 * s h 7 > v 7 $ t ' t 0 » a , 'm T m m ^ M 7 t o The ST-315, a high-sensitivity NPN silicon phototransistor
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ST-315
ST-315,
1r000Lux
000Lux
2856Kffi*
WSS ceramic package
ST-1CL5
ST-315
stroboscop
HI 1285-6
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VA1122
Abstract: VA1112
Text: OPTOELECTRONICS PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES C iap ! . t ,;'i it jm m ; N urnbt: ; 1 idM •JV f* o t ' r i ON W i ri M ? o n d i t i an 1 . 1 . 13,’ S t' n :-.ii ! ' y CL . x B V CfO ■' V! Ra i in q mu t im n T a b le n it ! O PB860N 11
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OPB860N11
OPB860N51
OPB860N55
OPB861N51
OPB861N55
OPB862N51
OPB862N55
OPB865N11
07T51
OPB867T55
VA1122
VA1112
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t431
Abstract: c 4161
Text: SHARP ELEK/ MELEC DIV 1SE D I 01007^0 0005770 S I Phototransistors P T431/P T431F . P T • T-4 1 -6 1 4 3 1 / P T 4 3 _ N arrow Acceptance. High Sensitivity P hototransistor y.ifi 1 F Features 1. Narrow acceptance epoxy resin package : TY P. ± 1 3 ’
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T431/P
T431F
PT431
PT431F
PT431F
PT431F)
GL430)
t431
c 4161
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FPT100
Abstract: CECL 006 FPT110 Phototransistors fairchild semiconductors semico ftp-100 FPT100/A/B
Text: S e m ic o vtd tid o rs Fairchild Sem iconductors Opto-electronics - Silicon Phototransistors C O N N E C T I O N D I A G R A M & D I M E N S I O N S IN S F P T 100, F P T 1 1 0 S ilic o n P h oto T ran sisto rs G E N E R A L D E S C R IP T IO N T h e F P T 1 0 0 a n d F P T 1 1 0 are three term inal N P N
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FPT110
FPT100
500fxA
20mW/cm2
100nA
CECL 006
Phototransistors
fairchild semiconductors
semico
ftp-100
FPT100/A/B
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phototransistor FPT 100
Abstract: Optical tachometer design of Optical tachometer file lfpt100 fpt-100 FPT100
Text: 100 '✓ y ! / . . N pN FPT100A I p p j -¡gOB s il ic o n I I PHOTOTRANSISTOR MECHANICAL OUTLINE GENERAL DESCRIPTIONS TO -1 0 6 T h e F P T 1 0 0 , F P T 1 0 0 A & F P T 1 0 0 IB are thr«ee te rm in a l N P N silicon planar phototransistors. dark c u rre n t.
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500/uA
phototransistor FPT 100
Optical tachometer
design of Optical tachometer file
lfpt100
fpt-100
FPT100
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VTT7114
Abstract: VTT7113
Text: 5bE D VCT .040" NPN Phototransistors V T T 7 1 13, 7 1 1 4 Molded Lensed Lateral Package E G & G V A C TEC T -4 1 -6 1 PACKAGE DIMENSIONS inch mm .0 5 5 ( 1 .4 0 ) .7 0 ( 1 7 . 8 ) .0 4 5 ( 1. 1 4 ) MINIMUM .0 2 8 ( 0 . 7 1 ) MAX. Ì-.1 8 0 ( 4 .5 7 )
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VTT7113,
VTE71xx
400fc
VTT7113
VTT7114
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PT4110
Abstract: PT411
Text: SHARP P T 4 1 1 PT411<W>T4110F Q / P T 4 1 1 Side View and Thin Fiat Type Phototransistors F • Features ■ Outline Dimensions Unit : mm 1. C o m p act an d th in fla t package 5wno -o . cn c. 30 * OS T 2 W id e b eam angle (H alf intensity angle : ± 7 0 “ »
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T4110F
PT4110F)
PT4110)
PT411QF)
PT4110/PT411QF
PT411Q
PT4110
PT411
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Untitled
Abstract: No abstract text available
Text: SbE D • 3D3GbDIi GOGllVT STM .040" NPN Phototransistors IVCT V T T 7 1 13, 7114 Molded Lensed Lateral Package E G & G VACTEC T—41—61 PACKAGE DIMENSIONS inch mm .05 5 (1 .4 0 ) .70 (1 7 .8 ) .04 5 (1 .1 4 ) MINIMUM .02 8 (0 .7 1 ) MAX. £ Ì-.180 (4 .5 7 )
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VTT7113
VTT7114
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Untitled
Abstract: No abstract text available
Text: BOaObOl QQQ1176 bbfi H V C T SbE D .040" NPN Phototransistors VTT 1212, 1214 Clear T-1 3/4 Plastic Package T -4 1 -6 7 E G & G VACTEC PACKAGE DIMENSIONS inch mm 1.00 ( 25 . 4) Also available in Infrared transmitting/ visible blocking version. Q CASE 26 T-1 3/4
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QQQ1176
VTE12xx
400fc
VTT1212
VTT1214
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VTT1225
Abstract: VTT1226 VTT1227 VTE12xx
Text: SbE D • 303^0^ OODllb'i bSS * V C T .025" NPN Phototransistors V T T 1 2 2 5 , 26, 27 Clear T-1 3/4 Plastic Package E 6 & <S VACTEC PACKAGE D IM EN SIO N S inch mm 1 .0 0 ( 2 5 . 4 ) MINIM UM ■050 ( 1 . 2 7 ) 0 3 0 ( 0 .7 6 ) .2 4 0 ( 6 .1 0 ) .2 2 0 ( 5 . 5 9 )
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303DbCn
VTT1225,
VTT1225
VTT1226
VTT1227
VTE12xx
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transistor s07
Abstract: VTT1031 VTT1032 VTT1033
Text: SbE D aDaDbDT QO Q 11 Ô Ô .060" NPN Phototransistors VCT V T T 1 0 3 1 , 32 TO-46 Flat Window Package _ S07 • E Q 8. G V A C T E C PACKAGE DIMENSIONS an* nun ■ 1 5 « ( 3 .9 -1) ( 1 2 .7 ) .5 0 ( 0 .5 1 ) .2 0 5 CASE 2 ( 5 .2 1 ) TO-46 HERMETIC (FIAT)
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OCR Scan
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VTT1031,
400fc
VTT1031
VTT1032
VTT1033
transistor s07
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transistor a950
Abstract: a950 transistor a950 o transistor A950 a950 y A950 O RJ450 BPX43 RJ45-0 8334A
Text: SIEMENS C M P N T S i OPTO -4ME D • a53b3Sb 0005223 b H S I E X SIEM ENS BPX43 SERIES PHOTOTRANSISTOR T -41-61 Package Dimensions in Inches mm .1 10 (2 .8 ) .1 10(2.8) Maximum Ratings Operating and Storage Temperature (T,^ T ^ J .
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PDF
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23b32b
G00S223
BPX43
T-41-61
0G05224
T-41-61
-30-B-iJ
transistor a950
a950 transistor
a950 o transistor
A950
a950 y
A950 O
RJ450
RJ45-0
8334A
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mct6 opto isolator
Abstract: MCT6 opto DIN57883 05033 "Direct Replacement" SIEMENS LN10
Text: SIEMENS CMPNTSi OPTO MME D • Û23b32b QQDS033 1 HISIEX r- m- *23 S IE M E N S ILCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER FEATURES T w o Isolated Channels Per Package 5 0 % T yp ical Current T ransfer Ratio 1 n A T yp ic al Leakage Current Direct Replacem ent For M C T 6
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OCR Scan
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PDF
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E52744
mct6 opto isolator
MCT6 opto
DIN57883
05033
"Direct Replacement" SIEMENS
LN10
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Untitled
Abstract: No abstract text available
Text: SIEMENS C M P N T S t OPTO M4E D • Ô53b32h QGQS5S1 H « S I E X SIEM ENS BPX38 SERÍES PHOTOTRANSISTOR T -4 1 -6 1 Package Dimensions in Inches mm .113128} Maximum Ratings Operating and Storage Temperature T „ J . -55*C to +125”C
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OCR Scan
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PDF
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53b32h
BPX38
23b35b
GGGS222
1200nm
r-41-61
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SG-212
Abstract: EE 45015 251C SG-213 SG-214 SG-212B
Text: T Z ^ Y ^ 1 jT , P H O T O iN T E R R U P T E R S J T r a n s im i ty p e SG -212 SG-212B, & 'J 'M r o a 5 I S 7 * DIMENSIONS U n it:m m ^ S T '-T o The SG-212 is a photointerrupter consisting of GaAs IRED and phototransistor. 1 # fi FEATURES • S /M l
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SG-212
SG-212B,
SG-212
50m/S
EE 45015
251C
SG-213
SG-214
SG-212B
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VTT1112
Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)
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3030bCH
DDD11Ã
VTT1112,
T-41-61
VTT1112
VTT1113
VTT1114
transistor T2S
DDD11
0 205 001 040
transistor c 4161
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Vactec
Abstract: DDD11 VTT1112 VTT1113 VTT1114
Text: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)
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OCR Scan
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PDF
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3030bCH
DDD11Ã
VTT1112,
T-41-61
VTT1112
VTT1113
VTT1114
Vactec
DDD11
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kb100
Abstract: No abstract text available
Text: SIEMENS CfIPNTSi OPTO 4ME D • ñ23L35b 0005033 1 « S I E X r- m- *23 S IE M E N S ILCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER FEATURES T w o Isolated Channels Per Package 5 0 % T yp ical Current T ransfer Ratio 1 n A T yp ical Leakage Current Direct Replacem ent For M C T 6
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OCR Scan
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PDF
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23L35b
E3b32b
0G0SG34
kb100
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PC17T1-PC-17T1
Abstract: PC-17T1 PC-17T4 PC-17T2 PC17T1
Text: LUMEX O P T O / C O M P O N E N T S INC Sb lb ll B 0000fl?b T • LMX 41E D PHOTOCOUPLERS P C - 1 7 _ T - Y / - 8 3 T 1 , 2 , 4 DIMENSIONS Unit: mm PC-17T1, 2, 4, photocoupler, is an optically coupled pair employing a GaAs IRED and a silicon NPN phototransistor.
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PC-17T1
PC-17T1,
PC-17T2
PC-17T4
2500volt
E107486
PC-17T1
PC-17T2
PC-17T4
PC17T1-PC-17T1
PC17T1
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