TLP290-4
Abstract: 11-11F1
Text: TLP290-4 Photocouplers GaAs Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers PLCs • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.
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TLP290-4
TLP290-4
11-11F1
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TI-131
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K
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OP509,
OP509SLD,
OP509SLC
DP189SL
0P269SL
TI-131
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SFH317-2
Abstract: SFH317-4 SFH501-2 SFH317F-4 sfh309-2 BP103-5 SFH309-3 BPY62-2 SFH317 LPT 80a
Text: Phototransistors Package Outline Part Typ* H«K Photocurrant Angl« XuSSOmn C ofttdor Emftter Vce-SV » V lreE(niA) SFH320-2 SFH320-3 L fc SFH320F-2 SFH320F-3 16-32 JiA SMTTOP-LED SMTTOPLED, daylight filter ±60” BP103B-4 SFH303-2 SFH303-3 SFH303-4 SFH303F-2
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SFH320-2
SFH320-3
SFH320F-2
SFH320F-3
BP103B-2
BP103B-3
BP103B-4
SFH303-2
SFH303-3
SFH303-4
SFH317-2
SFH317-4
SFH501-2
SFH317F-4
sfh309-2
BP103-5
SFH309-3
BPY62-2
SFH317
LPT 80a
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ZRNI53W
Abstract: No abstract text available
Text: ü SMD Phototransistors 1.6mm x 0.8mm x 1.1mm ZRNI53W Phototransistor Water Clear Lens A b s o lu te M axim um R ating T a =25°C °r 5V Power Dissipation at (or below) 2 5 'C Free Air Temperature. 100mW Storage Temperature R ange. -40; C - +85°C
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ZRNI53W
100mW
940nm
20mW/cm2
ZRNI53W
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pnp phototransistor
Abstract: RNI55W
Text: • Phototransistors 5mm Phototransistor RNI55W W ater Clear Lens A b solution M axlm un Rating Ta=25° Coi ector to -E m itte ' breakdown v o lta g e .30V Em itter-to-C ollector breakdown v o lta g e .5V
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RNI55W
940nm
100uA
pnp phototransistor
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PF42
Abstract: SFM309 SFH309P-2 SFM309P
Text: SFH309P DAYUGHT FILTER SFH309PF SIEMENS SILICON NPN PHOTOTRANSISTOR FE AT U R ES DESCRIPTION • Silicon NPN Phototransistor In Epitaxial Planar Technology The SFH309P/309PF are silicon NPN phototransistors in a standard T1 3 mm plastic package. The SFH309PF has a black daylight filter.
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SFH309P
SFH309PF
SFH309P:
SFH309PF:
SFH487P
SFH309P/309PF
itivity-SFH309P
itivity-SFH309PF
SFH309FVPF
PF42
SFM309
SFH309P-2
SFM309P
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pn268
Abstract: No abstract text available
Text: Panasonic Darlington Phototransistors PN268- NC Darlington Phototransistor For optical control systems • Features • D a rlin g to n output, high sensitivity • E asy to co m b in e w ith red and in frared lig h t em ittin g diodes • 0 3 p lastic pack ag e
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PN268-
pn268
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2856K
Abstract: PN208
Text: Panasonic Darlington Phototransistors PN208 Darlington Phototransistor For optical control systems • Features • D a rlin g to n output, high sensitivity • E asy to co m b in e lig h t em issio n and p h o to d ete ctio n on sam e prin ted c irc u it b oard
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PN208
2856K
2856K
PN208
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lu110
Abstract: PN108CL
Text: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se
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PN108CL
2856K
lu110
PN108CL
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photo darlington sensor
Abstract: CLR2049 CLR2050 CLR2060
Text: CLR2049 CLR2050 CLR2060 Silicon NPN Planar Epitaxial Darlington Phototransistors G E N E R A L D E S C R I P T I O N — T he C la ire x CLR2049, CLR2050, an d CLR2060 a re three-lead, silicon p lan ar epitaxial D arlington p h o to tra n sisto rs in a flat-w indow , herm etic TO-18
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CLR2049
CLR2050
CLR2060
CLR2049,
CLR2050,
CLR2060
100mA
2854CK)
photo darlington sensor
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phototransistor visible light
Abstract: panasonic aa
Text: Panasonic Phototransistors PN163- NC Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 4 (_ls (typ.) • A do p tio n o f v isib le lig h t c u to ff resin • U ltram in iatu re, th in side-view type pack ag e
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PN163-
phototransistor visible light
panasonic aa
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PN147
Abstract: No abstract text available
Text: Panasonic Phototransistors PN147 Silicon NPN Phototransistor U n it: mm For optical control systems Type num ber: Emitter mark Green • Features • High sensitivity • W ide spectral responsivity, matched to GaAs LEDs • Fast response : tr, tf = 3 jlls
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PN147
2856K
PN147
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Transistor 3TY
Abstract: CLED400 CLT4140 CLT4150 CLT4160
Text: CLT4140 CLT4150 CLT4160 Silicon NPN Planar Epitaxial Phototransistors GENERAL DESCRIPTION — The CLT4000 series are phototransistors molded in a clear epoxy package. Lead frame construction allows direct soldering into circuit board or socket mounting. All 3 types have guaranteed
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CLT4140
CLT4150
CLT4160
CLT4000
CLED400
300jusec.
214E711
70-c/i
Transistor 3TY
CLT4160
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CLR5101
Abstract: CLR5101-2 OA70
Text: CLR5101 ±.005 -1 0 7 7 DIA h*- Silicon NPN Planar Epitaxial Darlington Phototransistors GENERAL DESCRIPTION: The CLR5101 is an ex tremely sensitive photodarlington in a hermetically sealed package. The small size allows high density mounting on printing circuit boards. This device is available with a
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CLR5101
CLR5101
CLR5101-2
300/isec.
Sm27TÃ
CLR5101-2
OA70
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PD 2028 b
Abstract: No abstract text available
Text: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes
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940nm
880nm
840nm
PD 2028 b
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High sensitivity Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs
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2002/95/EC)
PNA1801L
PN168)
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OP644SL
Abstract: OP123 OP223 OP641 OP641SL OP642SL OP643SL
Text: OPTEK Product Bulletin OP641SL June 1996 NPN Silicon Phototransistors Types OP641SL, OP642SL, OP643SL, OP644SL Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • • • • • Collector-Emitter Voltage . 25 V
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OP641SL
OP641SL,
OP642SL,
OP643SL,
OP644SL
OP123
OP223
OP644SL
OP641
OP642SL
OP643SL
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PANASONIC MA
Abstract: 2856K PN107 PN108
Text: Panasonic Phototransistors PN107, PN108 Silicon NPN Phototransistors For optical control system s • F eatures • High sensitivity : I C e l = 5 mA (min.) (at L = 100 lx) • N arrow directional sensitivity for effective use o f light input • Fast response : tr = 5 (_ls (typ.)
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PN107,
PN108
PN108)
2856K
PANASONIC MA
2856K
PN107
PN108
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PN127
Abstract: No abstract text available
Text: Panasonic Phototransistors PN127 Silicon NPN Phototransistor U n it: mm For optical control systems Type number : Emitter mark Blue • Features • High sensitivity • G ood collector photo current linearity with respect to optical pow er input • Fast response : tr = 2.5 |^s (typ.)
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PN127
PN127
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Scans-00328
Abstract: PN150L
Text: Panasonic Phototransistors PN150L Silicon NPN Phototransistor U nit : mm For optical control systems • Features • High sensitivity • Wide spectral responsivity, suited for detecting GaAs LEDs • Low dark current • Small size, thin side-view type package
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PN150L
Scans-00328
PN150L
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phototransistor
Abstract: PN110 2856K
Text: Panasonic Phototransistors PN 110 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • W ide spectral resp o n siv ity • T h e m ost suitable d e te cto r fo r G aA s L E D s • F a st re sp o n se : tr, tf = 3
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PN110
2856K
phototransistor
PN110
2856K
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100S
Abstract: PN106 KS2500
Text: Panasonic Phototransistors PN106 Silicon NPN Phototransistor For optical control systems • Features • H igh sensitivity • F a st resp o n se : tr = 3.5 |^s typ. • N arro w directional sensitivity fo r effective use o f lig h t input • S ignal m ixing c ap ab ility using ba se pin
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PN106
100S
PN106
KS2500
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PN101
Abstract: No abstract text available
Text: Panasonic Phototransistors PN101 Silicon NPN Phototransistor For optical control systems • Features • High sensitivity • W ide spectral responsivity, suited for detecting GaAs L E D ’s • Low dark current : I C e o = 5 nA typ. • Fast response : tr, tf = 3 |xs (typ.)
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PN101
2856K
PN101
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OPB50
Abstract: OP550SLA OP550 OP550SLB OP550SLC OP550SLD 21584
Text: OPTEK TECHNOLOGY INC ObE D | fc.7TÖS6D OOOGlbO 2 | Optoelectronics Division T R W Electronic Components Group f f f f f Product Bulletin 5119 January 1965 NPN Silicon Phototransistors Types OP55Q, 0P550SLD, OP55QSLC, QP550SLB, OP55QSLA 500 12.7 m r I "
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OP550,
0P550SLD,
OP550SLC,
OP550SLB,
OP550SLA
0P560
0P550SLD
anE0-0P280CSX-875rm~
OPB50
OP550SLA
OP550
OP550SLB
OP550SLC
OP550SLD
21584
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