IC tl 072
Abstract: 2SD0965 2SD965
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)
|
Original
|
2002/95/EC)
2SD0965
2SD965)
IC tl 072
2SD0965
2SD965
|
PDF
|
MAR 641 TRANSISTOR
Abstract: 2SD1934
Text: Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage
|
Original
|
2SD1934
MAR 641 TRANSISTOR
2SD1934
|
PDF
|
2SB1288
Abstract: No abstract text available
Text: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ■ Absolute Maximum Ratings 0.7±0.1 0.7±0.2 ● Low collector to emitter saturation voltage VCE sat .
|
Original
|
2SB1288
2SB1288
|
PDF
|
2SD966
Abstract: No abstract text available
Text: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
|
Original
|
2SD966
2SD966
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 13.5±0.5
|
Original
|
2002/95/EC)
2SB0873
2SB873)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat)
|
Original
|
2002/95/EC)
2SD0965
2SD965)
|
PDF
|
2SB1288
Abstract: No abstract text available
Text: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Features ● ● Low collector to emitter saturation voltage VCE sat . Large collector current IC.
|
Original
|
2SB1288
2SB1288
|
PDF
|
2SB0873
Abstract: 2SB873
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 ue pl d in an c se ed lud pl vi an m m es
|
Original
|
2002/95/EC)
2SB0873
2SB873)
2SB0873
2SB873
|
PDF
|
2SB1288
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf
|
Original
|
2002/95/EC)
2SB1288
2SB1288
|
PDF
|
2SB0873
Abstract: 2SB873
Text: Transistors 2SB0873 2SB873 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE(sat)
|
Original
|
2SB0873
2SB873)
2SB0873
2SB873
|
PDF
|
2SB0976
Abstract: 2SB976
Text: Transistor 2SB0976 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. • Absolute Maximum Ratings
|
Original
|
2SB0976
2SB976)
2SB0976
2SB976
|
PDF
|
2SB873
Abstract: No abstract text available
Text: Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features Low collector to emitter saturation voltage VCE sat . Large collector current IC.
|
Original
|
2SB873
2SB873
|
PDF
|
JST tab on crimp height
Abstract: No abstract text available
Text: Emboss Tape SFH CONNECTOR 1.8mm pitch/Disconnectable Crimp style connectors Specifications ––––––––––––––––––– This low profile type connector with height of 3.0mm is designed for connection to stroboscope flash and realized space
|
Original
|
value/10m
testing/20m
SM02B-SFHRS-TFR.
160min.
100min.
400min.
JST tab on crimp height
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fluke 820-2 LED Stroboscope Technical Data Rugged, compact and easy-to-use Investigate and observe potential mechanism failure with confidence on a variety of machinery, in a wide range of industries, without making physical contact with the machine. The Fluke
|
Original
|
-36-FLUKE
6000226c-en
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat)
|
Original
|
2002/95/EC)
2SD0965
2SD965)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors 2SD1934 Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE sat
|
Original
|
2SD1934
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/
|
Original
|
2002/95/EC)
2SB1288
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 13.5±0.5 0.7±0.2
|
Original
|
2002/95/EC)
2SB1288
|
PDF
|
2SD0966
Abstract: 2SD966
Text: Transistor 2SD0966 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage
|
Original
|
2SD0966
2SD966)
2SD0966
2SD966
|
PDF
|
2SD788
Abstract: No abstract text available
Text: 2 2SD788 !! S Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm For stroboscope 5.0±0.2 4.0±0.2 C 5.1±0.2 B • Features 0.7±0.2 A • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances at high efficiency with the lowvoltage power supply.
|
Original
|
2SD788
2SD788
|
PDF
|
2SD0965
Abstract: 2SD965
Text: Transistor 2SD0965 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.0±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage
|
Original
|
2SD0965
2SD965)
2SD0965
2SD965
|
PDF
|
IPF 830
Abstract: 0047PF TIC 1602
Text: MULTILAYER CERAM IC CHIP CAPACITORS HCT Series Low tan 5 capacitor for stroboscope circuit Features Excellent dumping characteristics (Trigger characteristic) Low tan 6 (1/2 of standard type) Low ESR (1/2 o f standard type) Excellent bias properties Our patented copper barrier term inal allow s flow soldering. This
|
OCR Scan
|
E12series
100/C
033pF
047pF
IPF 830
0047PF
TIC 1602
|
PDF
|
TLN113
Abstract: TPS613
Text: TO SHIBA TPS613 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS613 Unit in mm FOR PHOTO SENSOR PHOTOELECTRIC COUNTER FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT DETECTOR FOR STROBOSCOPIC CONTROL • 953mm resin package
|
OCR Scan
|
TPS613
TLN113
TPS613
|
PDF
|
2085A
Abstract: 25C312
Text: TPS615 TOSHIBA TOSHIBA PHOTO TRANSISTOR FLOPPY DISK DRIVE SILICON NPN EPITAXIAL PLANAR TPS61 5 VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT STROBOSCOPE OPTO-ELECTRONIC SWITCH • • • . mm epoxy resin package Light current : I l = 20/*A MIN. at E = 0.1mW / cm2
|
OCR Scan
|
TPS615
TPS61
TLN119
2085A
25C312
|
PDF
|