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    Micro Commercial Components UD2KB100-BP

    BRIDGE RECT 1PHASE 1KV 2A D3K
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    DigiKey UD2KB100-BP Tube 5,375 1
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    Mouser Electronics UD2KB100-BP 671
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    Chip1Stop UD2KB100-BP 3,370
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    Micro Commercial Components UD3KB100-BP

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    DigiKey UD3KB100-BP Tube 4,075 1
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    Micro Commercial Components UD4KB100-BP

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    DigiKey UD4KB100-BP Tube 2,705 1
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    Mouser Electronics UD4KB100-BP 2,509
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    Taiwan Semiconductor UR3KB100

    3A, 1000V, STANDARD BRIDGE RECTI
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    DigiKey UR3KB100 Tube 1,500 1
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    Avnet Americas UR3KB100 Tube 1,500
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    TME UR3KB100 1
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    Taiwan Semiconductor UR4KB100-B

    BRIDGE RECT 1PHASE 1KV 4A D3K
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    DigiKey UR4KB100-B Tube 1,495 1
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    Avnet Americas UR4KB100-B Tube 1,500
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    EBV Elektronik UR4KB100-B 12 Weeks 1,500
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    KB100 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KB1000-10 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    KB1000-15 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    KB1000-20 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    KB1000-5 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    KB10-05S Volgen 10 Watttt Siinglle and Duall Outtputt, PCB Mounttablle AC//DC Swiittchiing Powerr Supplly Original PDF

    KB100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: OTZ CONNECTOR Disconnectable Crimp style Wire-to-wire connectors Specifications ––––––––––––––––––– • Current rating: Signal circuit 1.0A AC, DC AWG #26 Power supply circuit 5A AC, DC (AWG #20) • Voltage rating: Signal circuit 50V AC, DC (AWG #26)


    Original     		PDF SCZH-002T-P0 CZHR-16V-S UL94V-0,

    Untitled

    Abstract: No abstract text available
    Text: LM 4884 LM4884 2.1W Differential Input, BTL Output Stereo Audio Amplifier with RF Suppression and Shutdown Texa s In s t r u m e n t s Literature Number: SNAS267B Sem iconductor October 5, 2011 B O O m r Audio Power Am plifier Series 2 .1W D ifferential Input, BTL O u tp u t S tereo A u d io A m p lifie r


    OCR Scan     		PDF LM4884 SNAS267B LM4884

    11AV1

    Abstract: 11AV2 s415 RF M1E-H 11AV3 11AV-3
    Text: MIE D PHILIPS INTERNATIONAL • 711002b Q030M24 1 M P H I N P h ilip s S e m ic o n d u c to rs Product sp ecification Heavy duty optocouplers CNW11AV-1/2/3 FEA TUR ES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a


    OCR Scan     		PDF 711002b Q030M24 CNW11AV-1/2/3 11AV1 11AV2 s415 RF M1E-H 11AV3 11AV-3

    453 optocoupler

    Abstract: optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output SL5505S
    Text: Philips Semiconductors Product specification 7 ^ -V /- High-speed optocoupler flUALITY TECHNOLOGIES SL5505S CORP S7E D 74bb651 0004720 SST • 2TY FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC


    OCR Scan     		PDF SL5505S OT97F OT212. 74bbflSl 453 optocoupler optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output

    314 optocoupler

    Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
    Text: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with


    OCR Scan     		PDF OF4114 OT90B CNY17-3, 14CNP. MSB051 OF4114 OT212. 74bbflSl 0DD4fl03 314 optocoupler 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73

    Untitled

    Abstract: No abstract text available
    Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.


    OCR Scan     		PDF PO40/44A OT90B PO40/44A P040A, P042A, P043A, P044A satur10' bbS3T31 0D35S50

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • Input/output pin distance


    OCR Scan     		PDF CNG82/CNG83 E90700 BS415 CNG82 CNG83 bb53331 003530a D3530tl

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE aSE D • ^ 5 3 1 3 1 DOHIOO? _ JL_ CNX62 m r - - 8 5 HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line Dl L plastic envelope. The base is not connected.


    OCR Scan     		PDF CNX62 CNX62 E90700 0110b T-41-83 bb53T31

    SOT-90B

    Abstract: No abstract text available
    Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio


    OCR Scan     		PDF SL5500 SL5501 SL5511 bbS3T31 00355b? SOT-90B

    optocoupler 357

    Abstract: No abstract text available
    Text: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio


    OCR Scan     		PDF SL5504 bbS3T31 QD35S64 optocoupler 357

    Untitled

    Abstract: No abstract text available
    Text: MCT26 *1 OPTOCOUPLER A Optocoupler in a Dl L plastic envelope. The M CT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under U L component recognition F IL E E 90700 V D E — Approved according to V D E 0883/6.80 Reference voltage V D E 0 1 10b Tab 4 : A C 380 V/DC 450 V — isolation group C


    OCR Scan     		PDF MCT26 804/VDE 86/HD195 0D35S2A 3S530

    Untitled

    Abstract: No abstract text available
    Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC


    OCR Scan     		PDF H11B1 H11B2 H11B3 0110b bbS3T31 D03SSD4

    Untitled

    Abstract: No abstract text available
    Text: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage


    OCR Scan     		PDF 4N38A E90700 0110b bbS3T31 0Q35b41 0035b42

    CNX62

    Abstract: BS415
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.


    OCR Scan     		PDF CNX62 CNX62 bbS3T31 T-41-83 BS415

    CBC 184 transistor

    Abstract: S 354 OPTOCOUPLER CNX35U CNX36U CNX39U
    Text: CNX35U CNX36U CNX39U T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • •


    OCR Scan     		PDF CNX35U CNX36U CNX39U E90700 0110b 804/VDE 86/kft CNX36U. QD35414 CBC 184 transistor S 354 OPTOCOUPLER CNX35U CNX36U CNX39U

    L1102

    Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
    Text: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage


    OCR Scan     		PDF 4N38A E90700 0110b 0035b4E L1102 "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B

    H11B255

    Abstract: sot-90B OPTOCOUPLER dc
    Text: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo­ Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio


    OCR Scan     		PDF H11B255 0110b 7Z94797A H11B255 sot-90B OPTOCOUPLER dc

    MCA231

    Abstract: MCA265 MCA230 MCA255 OPTOCOUPLER dc 231 transistor opto isolators
    Text: MCA230 MCA231 MCA255 OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting GaAs diode and an npn silicon photo-D arlington transistor. Features o f these products: • • • • High o u tp u t/in p u t DC current transfer ratio


    OCR Scan     		PDF MCA230 MCA231 MCA255 MCA255) E90700 0110b 804/VDE 86/HD LLS3T31 003551b MCA231 MCA265 MCA230 MCA255 OPTOCOUPLER dc 231 transistor opto isolators

    CNX71A

    Abstract: CNX72A UBB033
    Text: P rodu ct specification P h ilip s S e m ico n d u cto rs High-voltage optocouplers CNX71A/CNX72A FE A T U R E S • High current transfer ratio and a low saturation voltage, making the devices suitable for use with T TL integrated circuits • High degree of A C and D C


    OCR Scan     		PDF CNX71A/CNX72A CNX71A CNX72A OT229B CNX72A, CNX71A. PINNING-CNX71A E90700 7Z24M7 UBB033

    bt 44a

    Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
    Text: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.


    OCR Scan     		PDF P040/44A OT90B P040/44A P040A, P042A, P043A, P044A LL53T31 bt 44a 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler

    PHILIPS CNX38

    Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
    Text: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.


    OCR Scan     		PDF GG2GT51 CNX38 CNX38U 10/is; T-41-83 5Z70428 PHILIPS CNX38 CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER

    Untitled

    Abstract: No abstract text available
    Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.


    OCR Scan     		PDF SL5500 SL5501 SL5511 OT212. MSA048-2

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification 7- H t - r j Optocouplers ÛUA L IT Y T E C H N O L O G I E S CNY17-1 to 4/CNY17F-1 to 4 CORP S7E D 74bbasi OOQMblM • Fast switching STANDARD REFERENCE • Low saturation voltage UL note 1 • High maximum output voltage


    OCR Scan     		PDF CNY17-1 4/CNY17F-1 74bbasi 0110b 57804/VDE 86/HD OT212. SA048-2

    CNY17G-3

    Abstract: CNY17G3
    Text: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with


    OCR Scan     		PDF CNY17G/CNY17GF E90700 BS415 BS7002 OT212. 74bbflSl 0DD4fl03 MSA048-2 CNY17G-3 CNY17G3