BFP405
Abstract: BGA420 S21216
Text: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
|
Original
|
PDF
|
BFP405
OT343
BFP405
BGA420
S21216
|
INFINEON BFP420 Ams
Abstract: BFP420 BGA420
Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
|
Original
|
PDF
|
BFP420
OT343
INFINEON BFP420 Ams
BFP420
BGA420
|
BFP405F
Abstract: BFP420F
Text: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
|
Original
|
PDF
|
BFP405F
BFP405F
BFP420F
|
BFP420F
Abstract: BFP520F
Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability
|
Original
|
PDF
|
BFP520F
BFP420F
BFP520F
|
BFP420 application notes
Abstract: No abstract text available
Text: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
|
Original
|
PDF
|
BFP420
OT343
BFP420 application notes
|
BFP520
Abstract: BGA420
Text: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability
|
Original
|
PDF
|
BFP520
OT343
BFP520
BGA420
|
BFP540F
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s
|
Original
|
PDF
|
BFP540F
Sep-05-2003
BFP540F
|
BFP450
Abstract: BGA420
Text: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability
|
Original
|
PDF
|
BFP450
OT343
BFP450
BGA420
|
BFP420F
Abstract: No abstract text available
Text: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability
|
Original
|
PDF
|
BFP420F
BFP420F
|
TRANSISTOR MARKING YB
Abstract: BFP420F BFP540F s parameters 4ghz
Text: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line to p v ie w " ! A T s d ir e c tio n o f u n r e e lin g
|
Original
|
PDF
|
BFP540F
TRANSISTOR MARKING YB
BFP420F
BFP540F
s parameters 4ghz
|
ic marking Yb
Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
|
Original
|
PDF
|
BFP540F
ic marking Yb
INFINEON ATS
TRANSISTOR MARKING YB
BFP420F
BFP540F
E6327
keic
|
Untitled
Abstract: No abstract text available
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
|
Original
|
PDF
|
BFP540F
|
marking ats
Abstract: BFP540F
Text: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g
|
Original
|
PDF
|
BFP540F
Jan-28-2004
marking ats
BFP540F
|
BFS360L6
Abstract: BFR36 BFR360L3
Text: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data Low voltage/ Low current operation 3 5 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 Low noise figure: 1.0 dB at 1.8 GHz Built in 2 transitors TR1, TR2: die as BFR360L3
|
Original
|
PDF
|
BFS360L6
BFR360L3)
Jun-11-2003
BFS360L6
BFR36
BFR360L3
|
|
|
Untitled
Abstract: No abstract text available
Text: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3
|
Original
|
PDF
|
BFS360L6
BFR360L3)
|
marking code CB SMD tr2
Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3
|
Original
|
PDF
|
BFS466L6
BFR460L3,
BFR360L3)
marking code CB SMD tr2
TRANSISTOR SMD MARKING CODE ce
marking code CB SMD ic
MARKING CODE SMD IC
BFR360L3
BFR460L3
BFS360L6
BFS466L6
SMD 6PIN IC MARKING CODE
SMD MARKING CODE 102c
|
transistor SMD 12E
Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3
|
Original
|
PDF
|
BFS469L6
BFR460L3,
BFR949L3)
transistor SMD 12E
SMD 6PIN IC MARKING CODE
TRANSISTOR SMD MARKING CODE ad
SMD 6PIN IC MARKING CODE p
BFS36
|
175-200MHZ
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67730L 175-200MHZ, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM P IN : P in RF INPUT <g VCC1 U t. DC SUPPLY 2 n d DC SUPPLY RF OUTPUT FIN @ VCC2 @PO ®GND ABSOLUTE MAXIMUM RATINGS Tc = 2 5 unless otherwise noted) Symbol Vcc Icc
|
OCR Scan
|
PDF
|
M67730L
175-200MHZ,
175-200MHZ
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:
|
OCR Scan
|
PDF
|
2SC2933
2SC2933
940MHz
900MHz,
900MHz
|
T rf transitor
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN E P IT A X IA L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:
|
OCR Scan
|
PDF
|
2SC2933
2SC2933
940MHz
900MHz,
900MHz
T rf transitor
|
2N3927
Abstract: 2N3926 SD1072 SD1062
Text: H n M T 5 M/ m I# IV IIC rO S e iI P ro g re s s P o w e re d b y T e c h no log y Commerce Drive Montgomeryville, PA 18936Tel: 215 631 -9840 N3926/2N3927 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS • ■ ■ ■ ■ . ■ FREQUENCY
|
OCR Scan
|
PDF
|
N3926/2N3927
230MHz
2N3926
2N3927
175MHz
175MHz
SD1062
2N3926
SD1072
2N3927
|
2SA1073
Abstract: 2SA1072 2sc2523
Text: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET
|
OCR Scan
|
PDF
|
2SA1072,
2SA1072A,
2SA1073
2SA1072/2SA1072A/2SA1073
2SA1073
2SA1072
2sc2523
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
PDF
|
1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
|
murata cfu455
Abstract: 6 channel Audio MIXER SCHEMATIC DIAGRAM CFU455 NEOSID t1 NEOSID S028 SSSB150 NEOSID 22 RF limiter PIN diode PIN diode Limiter
Text: ‘Bwmcimn Silicon s y s te m s LM SSSB150 ultra LOW Power FM Radio Receiver The SSSB150 is a single conversion receiver complete with RF amplifier/mixer/oscillator/IF amplifier and detector. It features very low power consumption and operation from 1.05 to 5 V supply. The device can be powered-down to a
|
OCR Scan
|
PDF
|
SSSB150
SSSB150
S02ntercept
murata cfu455
6 channel Audio MIXER SCHEMATIC DIAGRAM
CFU455
NEOSID t1
NEOSID
S028
NEOSID 22
RF limiter PIN diode
PIN diode Limiter
|
