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Vishay Siliconix SUP53P06-20-E3 MOSFET P-CH 60V 9.2A/53A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SUP53P06-20-E3	Tube	2,971		1	1 $3.9 10 $3.9 100 $3.9 1000 $1.36538 10000 $1.30888	Buy Now
RS	SUP53P06-20-E3	Bulk			500	1 - 10 - 100 - 1000 $2.86 10000 $2.86	Get Quote
Bristol Electronics	SUP53P06-20-E3		400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SUP53P06-20-E3		320			1 $3.51 10 $3.51 100 $2.34 1000 $2.1645 10000 $2.1645	Buy Now
New Advantage Corporation	SUP53P06-20-E3		400		1	1 - 10 - 100 $1.74 1000 $1.74 10000 $1.74	Buy Now
Vishay Siliconix SUP53P06-20-GE3 MOSFET P-CH 60V 9.2A/53A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SUP53P06-20-GE3	Tube			500	1 - 10 - 100 - 1000 $1.18302 10000 $1.18302	Buy Now
Vishay Intertechnologies SUP53P06-20-E3 Trans MOSFET P-CH 60V 9.2A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: SUP53P06-20-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP53P06-20-E3	Bulk	500	13 Weeks	500	1 - 10 - 100 - 1000 $1.40221 10000 $1.34118	Buy Now
Mouser Electronics	SUP53P06-20-E3		8,327			1 $3.11 10 $2.49 100 $1.43 1000 $1.39 10000 $1.39	Buy Now
Newark	SUP53P06-20-E3	Bulk	960		1	1 $3.07 10 $2.57 100 $1.52 1000 $1.42 10000 $1.42	Buy Now
TTI	SUP53P06-20-E3	Tube	4,250		50	1 - 10 - 100 $1.12 1000 $1.06 10000 $1.04	Buy Now
TME	SUP53P06-20-E3		523		1	1 $2.26 10 $1.79 100 $1.63 1000 $1.5 10000 $1.5	Buy Now

Avnet Asia	SUP53P06-20-E3			15 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	SUP53P06-20-E3	Tube	1,970			1 $1.71 10 $1.49 100 $1.45 1000 $1.42 10000 $1.42	Buy Now
EBV Elektronik	SUP53P06-20-E3		50	14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SUP53P06-20-GE3 Trans MOSFET P-CH 60V 9.2A 3-Pin TO-220AB - Tape and Reel (Alt: SUP53P06-20-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SUP53P06-20-GE3	Reel			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SUP53P06-20-GE3			21 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SUP53P0620GE3 P-CHANNEL 60-V (D-S) MOSFET Power Bipolar Transistor, 1-Element, P-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SUP53P0620GE3		274			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SUP53P0620 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SUP53P06-20-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 9.2A TO220AB		Original	PDF
SUP53P06-20-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 60V 9.2A TO220AB		Original	PDF

SUP53P0620 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SUP53P06-20 Abstract: SUP53 Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP53P06-20 SUP53	PDF
SUP53P06-20 Abstract: No abstract text available Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 18-Jul-08 SUP53P06-20	PDF
Untitled Abstract: No abstract text available Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
SUP53P06-20 Abstract: SUP53P06-20-E3 SUP53P06 Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 08-Apr-05 SUP53P06-20 SUP53P06-20-E3 SUP53P06	PDF
Untitled Abstract: No abstract text available Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SUP53P06 Abstract: 9842 AN609 SUP53P06-20 Text: SUP53P06-20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	SUP53P06-20 AN609, 09-May-08 SUP53P06 9842 AN609	PDF
SUP53P06-20 Abstract: S-8205 SUP53P0620 64230 SUP53P06 Text: SPICE Device Model SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	SUP53P06-20 S-82052-Rev. 01-Sep-08 SUP53P06-20 S-8205 SUP53P0620 64230 SUP53P06	PDF
SUP53P06-20 Abstract: SUP53P06 Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 11-Mar-11 SUP53P06-20 SUP53P06	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUP53P06-20 www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	SUP53P06-20 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
SUP53P06-20 Abstract: SUP53P0620 Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 11-Mar-11 SUP53P06-20 SUP53P0620	PDF
SUP53P06-20 Abstract: S-82052 SUP53 Text: SPICE Device Model SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	SUP53P06-20 18-Jul-08 SUP53P06-20 S-82052 SUP53	PDF

Untitled Abstract: No abstract text available Text: SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 a RDS(on) () ID (A) 0.0195 at VGS = - 10 V - 53 0.0250 at VGS = - 4.5 V - 42 Qg (Typ.) 76 nC TO-220AB • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization:	Original	SUP53P06-20 O-220AB SUP53P06-20-E3 SUP53P06-20-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

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Vishay Siliconix SUP53P06-20-E3

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Vishay Intertechnologies SUP53P0620GE3

SUP53P0620 Datasheets (2)

SUP53P0620 Datasheets Context Search

SUP53P06-20

SUP53P06-20

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irfb4115

SUP53P06-20

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SUP53P06

SUP53P06-20

SUP53P06-20

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si7121

SUP53P06-20

SUP53P06-20

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