sup50n03
Abstract: 557-538
Text: SUP50N03-5m1P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SUP50N03-5m1P
AN609,
31-May-10
sup50n03
557-538
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Untitled
Abstract: No abstract text available
Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:
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SUP50N03-5m1P
O-220AB
SUP50N03-5m1P-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUP50N03
Abstract: SUP50N03-5m1P
Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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SUP50N03-5m1P
2002/95/EC
O-220AB
SUP50N03-5m1P-GE3
18-Jul-08
SUP50N03
SUP50N03-5m1P
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP50N03-5m1P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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PDF
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SUP50N03-5m1P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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PDF
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SUP50N03-5m1P
2002/95/EC
O-220AB
SUP50N03-5m1P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SUP50N03-5m1P
Abstract: No abstract text available
Text: SPICE Device Model SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SUP50N03-5m1P
18-Jul-08
SUP50N03-5m1P
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Untitled
Abstract: No abstract text available
Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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PDF
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SUP50N03-5m1P
2002/95/EC
O-220AB
SUP50N03-5m1P-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SUP50N03
Abstract: No abstract text available
Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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PDF
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SUP50N03-5m1P
2002/95/EC
O-220AB
SUP50N03-5m1P-GE3
11-Mar-11
SUP50N03
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Untitled
Abstract: No abstract text available
Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:
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Original
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PDF
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SUP50N03-5m1P
O-220AB
SUP50N03-5m1P-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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