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    Vishay Siliconix SUP50020EL-GE3

    MOSFET N-CH 60V 120A TO220AB
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    DigiKey SUP50020EL-GE3 Bulk 265 1
    • 1 $3.38
    • 10 $2.328
    • 100 $3.38
    • 1000 $1.375
    • 10000 $1.375
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    Vishay Siliconix SUP50010E-GE3

    MOSFET N-CH 60V 150A TO220AB
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    DigiKey SUP50010E-GE3 Tube 168 1
    • 1 $3.63
    • 10 $3.63
    • 100 $3.63
    • 1000 $1.50825
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    Vishay Siliconix SUP50020E-GE3

    MOSFET N-CH 60V 120A TO220AB
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    DigiKey SUP50020E-GE3 Tube 500
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    Vishay Siliconix SUP50N10-21P-GE3

    MOSFET N-CH 100V 50A TO220AB
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    Bristol Electronics SUP50N10-21P-GE3 500
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    Quest Components SUP50N10-21P-GE3 400
    • 1 $3.168
    • 10 $3.168
    • 100 $1.584
    • 1000 $1.4652
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    Vishay Siliconix SUP50N03-5M1P-GE3

    MOSFET N-CH 30V 50A TO220AB
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    SUP50 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP50010E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 60-V TO-220 Original PDF
    SUP50020E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220AB Original PDF
    SUP50020EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220AB Original PDF
    SUP50N03-5M1P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A TO-220AB Original PDF
    SUP50N10-21P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 50A TO220AB Original PDF

    SUP50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sup50n03

    Abstract: 557-538
    Text: SUP50N03-5m1P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SUP50N03-5m1P AN609, 31-May-10 sup50n03 557-538

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUP50N03-5m1P O-220AB SUP50N03-5m1P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP50N03

    Abstract: SUP50N03-5m1P
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 18-Jul-08 SUP50N03 SUP50N03-5m1P

    SMP60N06-18

    Abstract: SUP50N06 SUP50N06-18 SMP60N06
    Text: SMP60N06Ć18 Siliconix NĆChannel EnhancementĆMode Transistor, 18ĆmW rDS on 175_C Maximum Junction Temperaturea Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TOĆ220AB G DRAIN connected to TAB GD S S Top View


    Original     		PDF SMP60N0618 SUP50N0618 O220AB P36737Rev. SMP60N06-18 SUP50N06 SUP50N06-18 SMP60N06

    Untitled

    Abstract: No abstract text available
    Text: SUP50N10-21P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.021 at VGS = 10 V 50d 0.023 at VGS = 8 V 49.7 0.028 at VGS = 6 V 45 Qg (Typ.) 30.2 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUP50N10-21P O-220AB SUP50N10-21P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP50N03-5m1P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SUP50N03-5m1P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SMP60N06-18

    Abstract: SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06
    Text: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SMP60N06-18 18-mW SUP50N0618 O-220AB P-36737--Rev. 30-May-94 SMP60N06-18 SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUP50N03-5m1P

    Abstract: No abstract text available
    Text: SPICE Device Model SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUP50N03-5m1P 18-Jul-08 SUP50N03-5m1P

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP50N10-21P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.021 at VGS = 10 V 50d 0.023 at VGS = 8 V 49.7 0.028 at VGS = 6 V 45 Qg (Typ.) 30.2 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUP50N10-21P O-220AB SUP50N10-21P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SMP60N06-18

    Abstract: SMP60N06 SMP60N06-18 power mosfet data sheet SMP60N06 SUP50N06 SUP50N06-18
    Text: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SMP60N06-18 18-mW SUP50N0618 O-220AB P-36737--Rev. 30-May-94 SMP60N06-18 SMP60N06 SMP60N06-18 power mosfet data sheet SMP60N06 SUP50N06 SUP50N06-18

    SUP50N03

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SUP50N03-5m1P 2002/95/EC O-220AB SUP50N03-5m1P-GE3 11-Mar-11 SUP50N03

    Untitled

    Abstract: No abstract text available
    Text: SUP50N03-5m1P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.0051 at VGS = 10 V 50d 0.0063 at VGS = 4.5 V 50d Qg (Typ.) 21.7 • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUP50N03-5m1P O-220AB SUP50N03-5m1P-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP50N10-21P

    Abstract: No abstract text available
    Text: SPICE Device Model SUP50N10-21P www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SUP50N10-21P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUP50N10-21P

    72674

    Abstract: SUP50N06-16L SUP50N06 BERGQUIST AN827 SIL-PAD A1500
    Text: AN827 Vishay Siliconix Torque Recommendations for TO-220 Devices Kandarp Pandya INTRODUCTION When the TO-220 was first introduced, most applications required something less than the full power handling capabilities of this package. Hence, the TO-220 is almost


    Original     		PDF AN827 O-220 01-Dec-03 O-220 72674 SUP50N06-16L SUP50N06 BERGQUIST AN827 SIL-PAD A1500

    GPS 634R

    Abstract: 634R SUP500R SUP500RR GPS-622R Passive GPS ceramic patch antenna ANTENNA GPS DS-GPS-622R-1 GPS622R RIGHT ANGLE RMC
    Text: GPS SMART RECEIVER WITH ANTENNA GPS-622R LowLow-Power HighHigh-Performance and LowLow-Cost 65 Channel GPS Engine Board ROM based Data Sheet Version 1.0 1.0 Abstract Technical data sheet describing the cost effective, high-performance GPS622R GPS622R based series of ultra high sensitive GPS modules.


    Original     		PDF GPS-622R GPS622R GPS622R IPC-A-610D DS-GPS-622R-1 GPS 634R 634R SUP500R SUP500RR GPS-622R Passive GPS ceramic patch antenna ANTENNA GPS DS-GPS-622R-1 RIGHT ANGLE RMC

    SUP500RR

    Abstract: No abstract text available
    Text: GPS SMART RECEIVER WITH ANTENNA GPS-622F LowLow-Power HighHigh-Performance and LowLow-Cost 65 Channel GPS Engine Board Flash based Data Sheet Abstract Technical data sheet describing the cost effective, high-performance GPS622F GPS622F based series of ultra high sensitive GPS modules.


    Original     		PDF GPS-622F GPS622F GPS622F IPC-A-610D DS-GPS-622F-2 SUP500RR

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs


    Original     		PDF O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN

    SMP60N06-18 power mosfet

    Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
    Text: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View


    OCR Scan     		PDF SMP60N06-18 18-mQ SUP50N06-18 T0-220AB P-36737--Rev. 30-May-94 SMP60N06-18 power mosfet SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor