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    SUD50P10 Price and Stock

    Vishay Siliconix SUD50P10-43L-E3

    MOSFET P-CH 100V 37.1A TO252
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    DigiKey SUD50P10-43L-E3 Cut Tape 3,176 1
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    New Advantage Corporation SUD50P10-43L-E3 8,000 1
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    Vishay Siliconix SUD50P10-43L-BE3

    MOSFET P-CH 100V 9.2A/37.1A DPAK
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    DigiKey SUD50P10-43L-BE3 Cut Tape 1,860 1
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    Vishay Siliconix SUD50P10-43L-GE3

    MOSFET P-CH 100V 37.1A TO252
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    DigiKey SUD50P10-43L-GE3 Digi-Reel 1,625 1
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    Quest Components SUD50P10-43L-GE3 1,141
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    SUD50P10-43L-GE3 6
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    Vishay Siliconix SUD50P10-43-E3

    MOSFET P-CH 100V 38A TO252
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    Vishay Intertechnologies SUD50P10-43L-E3

    Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK - Bulk (Alt: 97W3071)
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    Avnet Americas SUD50P10-43L-E3 Bulk 16 Weeks, 3 Days 1
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    Mouser Electronics SUD50P10-43L-E3 37,733
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    Verical SUD50P10-43L-E3 9,179 6
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    SUD50P10-43L-E3 4,000 2,000
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    Arrow Electronics SUD50P10-43L-E3 Cut Strips 9,179 13 Weeks 1
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    SUD50P10-43L-E3 2,000 13 Weeks 2,000
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    Newark SUD50P10-43L-E3 Bulk 14,994 1
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    Quest Components SUD50P10-43L-E3 11
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    SUD50P10-43L-E3 Cut Tape 510 10
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    TME SUD50P10-43L-E3 1
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    Chip 1 Exchange SUD50P10-43L-E3 10,400
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    Wuhan P&S SUD50P10-43L-E3 8,000 1
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    SUD50P10 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD50P10-43-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 38A TO252 Original PDF
    SUD50P10-43L-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 37.1A TO252 Original PDF
    SUD50P10-43L-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 37.1A TO252 Original PDF

    SUD50P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUD50P10-43L

    Abstract: No abstract text available
    Text: New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252


    Original     		PDF SUD50P10-43L O-252 SUD50P10-43L-E3 08-Apr-05 SUD50P10-43L

    9952

    Abstract: 2429 AN609 SUD50P10-43L SUD50P10
    Text: SUD50P10-43L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50P10-43L AN609 16-Oct-07 9952 2429 SUD50P10

    SUD50P10-43L

    Abstract: 73501
    Text: SPICE Device Model SUD50P10-43L www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD50P10-43L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SUD50P10-43L 73501

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –100 0.043 @ VGS = –10 V (A)a –38 Qg (Typ) RoHS 105 nC COMPLIANT TO-252 S G Drain Connected to Tab G


    Original     		PDF SUD50P10-43 O-252 SUD50P10-43--E3 08-Apr-05

    SUD50P10-43

    Abstract: No abstract text available
    Text: SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –100 0.043 at VGS = –10 V (A)a –38 Qg (Typ) RoHS 105 nC COMPLIANT TO-252 S G Drain Connected to Tab


    Original     		PDF SUD50P10-43 O-252 SUD50P10-43 60311--Rev. 27-Feb-06

    4600 mosfet

    Abstract: s0913 SUD50P10-43L-E3
    Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)


    Original     		PDF SUD50P10-43L 2002/95/EC O-252 SUD50P10-43L-E3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 4600 mosfet s0913 SUD50P10-43L-E3

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)


    Original     		PDF SUD50P10-43L 2002/95/EC O-252 SUD50P10-43L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUD50P10-43L

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50P10-43L 18-Jul-08 SUD50P10-43L

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)


    Original     		PDF SUD50P10-43L 2002/95/EC O-252 SUD50P10-43L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43L-GE3 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () ID (A) 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		PDF SUD50P10-43L-GE3 O-252 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUD50P10-43L

    Abstract: A38S
    Text: New Product SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET Qg (Typ) RoHS 54 nC COMPLIANT TO-252


    Original     		PDF SUD50P10-43L O-252 SUD50P10-43L-E3 18-Jul-08 SUD50P10-43L A38S

    SUD50P10-43L-E3

    Abstract: SUD50P10-43L SUD50P10
    Text: SUD50P10-43L New Product Vishay Siliconix P-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.043 @ VGS = –10 V –37 0.048 @ VGS = –4.5 V –35 VDS (V) –100 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:


    Original     		PDF SUD50P10-43L O-252 SUD50P10-43L--E3 51510--Rev. 22-Aug-05 SUD50P10-43L-E3 SUD50P10-43L SUD50P10

    SUD50P10-43L

    Abstract: SUD50P10-43L-E3
    Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)


    Original     		PDF SUD50P10-43L 2002/95/EC O-252 SUD50P10-43L-E3 11-Mar-11 SUD50P10-43L SUD50P10-43L-E3

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)


    Original     		PDF SUD50P10-43L 2002/95/EC O-252 SUD50P10-43L-E3 25hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –100 0.043 at VGS = –10 V (A)a –38 Qg (Typ) RoHS 105 nC COMPLIANT TO-252 S G Drain Connected to Tab


    Original     		PDF SUD50P10-43 O-252 SUD50P10-43 08-Apr-05

    SUD50P10-43L

    Abstract: a3025
    Text: SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 VDS (V) - 100 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)


    Original     		PDF SUD50P10-43L 2002/95/EC O-252 SUD50P10-43L-E3 18-Jul-08 SUD50P10-43L a3025

    Untitled

    Abstract: No abstract text available
    Text: SUD50P10-43L-GE3 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () ID (A) 0.043 at VGS = - 10 V - 37 0.048 at VGS = - 4.5 V - 35 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		PDF SUD50P10-43L-GE3 O-252 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sud50p10

    Abstract: SUD50P10-43L-E3
    Text: SUD50P10-43L New Product Vishay Siliconix P-Channel 100-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.043 @ VGS = –10 V –37 0.048 @ VGS = –4.5 V –35 VDS (V) –100 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:


    Original     		PDF SUD50P10-43L O-252 SUD50P10-43L--E3 08-Apr-05 sud50p10 SUD50P10-43L-E3

    SUD50P10-43L

    Abstract: SUD50P10 73,467
    Text: SPICE Device Model SUD50P10-43L Vishay Siliconix P-Channel 100-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50P10-43L S-51620Rev. 05-Sep-05 SUD50P10-43L SUD50P10 73,467

    22 aec capacitors

    Abstract: 146CTI
    Text: HID Headlight AFL Table of Contents AFL / HLL MOTOR DRIVE, H-Bridge. 3 BALLAST, Discharge Resistors. 5


    Original     		PDF CRCW1206 CRCW1210 CRCW2010 CRCW2512 TLWO/Y7900 2000mlm 22 aec capacitors 146CTI

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Untitled

    Abstract: No abstract text available
    Text: HVAC Climate Control Table of Contents AIR FLOW CONTROL, Blower Control. 3 AIR FLOW CONTROL, Vent Control. 5


    Original     		PDF VLMO31xx-GS08 VLMW41 TCUT1300X01

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477