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    SUD09P10 Price and Stock

    Vishay Intertechnologies SUD09P10-195-BE3

    Transistor MOSFET P-Channel 100V 8.8A 3-Pin TO-252 - Tape and Reel (Alt: SUD09P10-195-BE3)
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    Avnet Americas SUD09P10-195-BE3 Reel 2,000 2,000
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    Newark SUD09P10-195-BE3 Cut Tape 2,000
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    SUD09P10-195-BE3 Reel 2,000
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    TTI SUD09P10-195-BE3 Reel 12,000 2,000
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    TME SUD09P10-195-BE3 2,000
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    EBV Elektronik SUD09P10-195-BE3 14 Weeks 2,000
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    Vishay Intertechnologies SUD09P10-195-GE3

    Trans MOSFET P-CH 100V 8.8A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6526)
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    Avnet Americas SUD09P10-195-GE3 Ammo Pack 10 Weeks, 4 Days 1
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    SUD09P10-195-GE3 Reel 13 Weeks 2,000
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    Mouser Electronics SUD09P10-195-GE3 8,401
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    Newark SUD09P10-195-GE3 Cut Tape 1,971 1
    • 1 $0.455
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    SUD09P10-195-GE3 Reel 2,000
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    SUD09P10-195-GE3 Bulk 1
    • 1 $0.898
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    Bristol Electronics SUD09P10-195-GE3 13,141
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    TTI SUD09P10-195-GE3 Reel 2,000
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    TME SUD09P10-195-GE3 1,980 1
    • 1 $0.836
    • 10 $0.691
    • 100 $0.557
    • 1000 $0.468
    • 10000 $0.446
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    Avnet Asia SUD09P10-195-GE3 15 Weeks 2,000
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    Chip1Stop SUD09P10-195-GE3 6,000
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    SUD09P10-195-GE3 Cut Tape 2,190
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    SUD09P10-195-GE3 2,000
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    EBV Elektronik SUD09P10-195-GE3 14 Weeks 2,000
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    Vishay Siliconix SUD09P10-195-GE3

    Single P-Channel 100 V 0.195 Ohm Surface Mount Power Mosfet - TO-252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    New Advantage Corporation SUD09P10-195-GE3 52,000 1
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    Vishay Siliconix SUD09P10-195-BE3

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    New Advantage Corporation SUD09P10-195-BE3 4,000 1
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    Vishay Huntington SUD09P10-195-GE3

    MOSFET P-CH 100V 8.8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SUD09P10-195-GE3 25,445
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    • 100 $1.044
    • 1000 $0.848
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    Find more SUD09P10 price and stock on Findchips.com

    SUD09P10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD09P10-195-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 8.8A DPAK Original PDF

    SUD09P10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: sud09p10
    Text: SUD09P10-195_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SUD09P10-195 AN609, 08-Mar-10 AN609 sud09p10

    SUD09P10-195

    Abstract: No abstract text available
    Text: SPICE Device Model SUD09P10-195 Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD09P10-195 18-Jul-08 SUD09P10-195

    SUD09P10-195

    Abstract: SUD09P10
    Text: SUD09P10-195 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 ID (A) 0.195 at VGS = - 10 V - 8.8 0.210 at VGS = - 4.5 V - 8.5 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD09P10-195 2002/95/EC O-252 SUD09P10-195-GE3 18-Jul-08 SUD09P10-195 SUD09P10

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD09P10-195 www.vishay.com Vishay Siliconix P-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD09P10-195 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD09P10-195 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 ID (A) 0.195 at VGS = - 10 V - 8.8 0.210 at VGS = - 4.5 V - 8.5 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD09P10-195 2002/95/EC O-252 SUD09P10-195-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUD09P10-195 Vishay Siliconix P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 ID (A) 0.195 at VGS = - 10 V - 8.8 0.210 at VGS = - 4.5 V - 8.5 Qg (Typ.) 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SUD09P10-195 2002/95/EC O-252 SUD09P10-195-GE3 18-Jul-08

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836