STN2N10L Search Results

STN2N10L Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STN2N10L		STMicroelectronics	N-Channel Enhancement Mode Power MOS Transistor		Original	PDF

STN2N10L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
n2n10 Abstract: N2N10L STN2N10L Text: STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST N2N10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.5 Ω 2 A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON	Original	STN2N10L N2N10L OT-223 OT-223 n2n10 N2N10L STN2N10L	PDF
P008B DIODE Abstract: STN2N10L STN2N10 Text: STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS R DS on I D CONT STN2N10L 100 V < 0.5 Ω 2A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON	Original	STN2N10L OT-223 OT-223 P008B DIODE STN2N10L STN2N10	PDF
ste30na50 Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20 Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0	Original	OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20	PDF
IRF540 complementary Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3	Original	RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR	PDF
STP3N60FI Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90 Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L	Original	O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90	PDF
SSH6N80 Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent	PDF
Untitled Abstract: No abstract text available Text: rZ Z SGS-THOMSON ^7# MDOi@ilL[i Sra M(gS STN2N10L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STN2N10L V dss RDS(on Id 100 V < 0.5 a 2 A • TYPICAL RDS(on) = 0.35 £1 ■ AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW SOLDERED . AVAILABLE IN TAPE AND REEL ON	OCR Scan	STN2N10L OT-223 OT-223 OT223 007745b	PDF
2n10l Abstract: n10l Text: * 7# TYPE STN 2N 10L SGS-THOMSON [MOeiMillLieraeiDIgS S T N 2 N1 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0.5 Ç1 2 A • TYPICAL RDS(on) = 0.35 £2 . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW SOLDERED	OCR Scan	OT-223 OT-223 2n10l n10l	PDF