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    N10L Search Results

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    N10L Price and Stock

    Infineon Technologies AG BSC082N10LSGATMA1

    MOSFET N-CH 100V 13.8A 8TDSON
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    DigiKey BSC082N10LSGATMA1 Digi-Reel 8,705 1
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    BSC082N10LSGATMA1 Cut Tape 8,705 1
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    BSC082N10LSGATMA1 Reel 5,000 5,000
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    Chip 1 Exchange BSC082N10LSGATMA1 858
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    EBV Elektronik BSC082N10LSGATMA1 5,000 17 Weeks 5,000
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    New Advantage Corporation BSC082N10LSGATMA1 5,000 1
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    Taiwan Semiconductor TSM160N10LCR-RLG

    MOSFET N-CH 100V 46A 8PDFN
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    DigiKey TSM160N10LCR-RLG Reel 7,500 2,500
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    onsemi FQB33N10LTM

    MOSFET N-CH 100V 33A D2PAK
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    DigiKey FQB33N10LTM Reel 6,400 800
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    onsemi FDD850N10L

    MOSFET N-CH 100V 15.7A DPAK
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    DigiKey FDD850N10L Reel 5,000 2,500
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    Avnet Americas FDD850N10L Reel 0 Weeks, 2 Days 1,471
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    FDD850N10L Reel 16 Weeks 2,500
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    Bristol Electronics FDD850N10L 4,650
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    TME FDD850N10L 2,426 1
    • 1 $1.15
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    Richardson RFPD FDD850N10L 2,500
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    Avnet Silica FDD850N10L 17 Weeks 2,500
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    EBV Elektronik FDD850N10L 18 Weeks 2,500
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    Flip Electronics FDD850N10L 2,355
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    Infineon Technologies AG BSC096N10LS5ATMA1

    MOSFET N-CH 100V 40A TDSON-8-6
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    DigiKey BSC096N10LS5ATMA1 Digi-Reel 1,635 1
    • 1 $1.87
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    • 1000 $0.89314
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    BSC096N10LS5ATMA1 Cut Tape 1,635 1
    • 1 $1.87
    • 10 $1.41
    • 100 $1.097
    • 1000 $0.89314
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    Newark BSC096N10LS5ATMA1 Cut Tape 1,672 1
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    Chip1Stop BSC096N10LS5ATMA1 Cut Tape 4,757
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    BSC096N10LS5ATMA1 3
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    EBV Elektronik BSC096N10LS5ATMA1 20,000 19 Weeks 5,000
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    N10L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n10u

    Abstract: n10e Diode N10Z N10Y N10Z 738 39A diode N10H n10g p10j n10p
    Text: Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts 10 x 1000 µs double


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description Uni-directional Bi-directional The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


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    PDF E128662 DO-214AA 12mm/13â RS-481

    O10F

    Abstract: N10H n10u n10e
    Text: Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor IKSMBJ Series The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts 10 x 1000 µs double


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    PDF automo39 O10F N10H n10u n10e

    n10u

    Abstract: N10H A10N A10y 1KSMB10A 1KSMB11A 1KSMB12A 1KSMB75CA n10g 1KSMB33A
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W RoHS 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


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    PDF E128662 1000s DO-214AA n10u N10H A10N A10y 1KSMB10A 1KSMB11A 1KSMB12A 1KSMB75CA n10g 1KSMB33A

    N10Y

    Abstract: B10F n10Z n10u
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series RoHS Pb Description The 1KSMB series is designed speciically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


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    PDF DO-214AA 12mm/13â RS-481 N10Y B10F n10Z n10u

    PK P6KE 200A

    Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
    Text: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop


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    PDF EC111 EC2111v1E0804 PK P6KE 200A SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA

    SC-05 Fuji

    Abstract: SC03Y square d starter type sc03 Fuji 3pole 3 phase magnetic Contactor SC-N* "Fuji" SCN5 KK05-042 SC-03RM TR-N3 SC03 Index 1
    Text: Magnetic Contactors and Starters General information 01 FUJI low-voltage contactors and starters are available in a broad choice of types, from high-performance to economy, for all consumer and industrial needs. For standard applications, we offer the highperformance SC series. We offer the


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    PDF SC-03 WN11J SZ-WN10RJ SZ-WN11RJ SW-N10RM/3H SW-N11RM/3H, N12RM/3H SC-05 Fuji SC03Y square d starter type sc03 Fuji 3pole 3 phase magnetic Contactor SC-N* "Fuji" SCN5 KK05-042 SC-03RM TR-N3 SC03 Index 1

    N10E

    Abstract: 16.7 do-214aa 6.8A DO-214AA diode marking 1.0/50 71 n10u n10Z DEVICE MARKING CODE 150A diode 68A DO-214AA 16.7 O10S
    Text: Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts 10 x 1000 µs double


    Original
    PDF DO-214AA N10E 16.7 do-214aa 6.8A DO-214AA diode marking 1.0/50 71 n10u n10Z DEVICE MARKING CODE 150A diode 68A DO-214AA 16.7 O10S

    N10T

    Abstract: N10J N10P A10P n10u n10l
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description Uni-directional Bi-directional The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


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    PDF JESD201A IEC-61000-4-2 IEC801-2) DO-214AA 12mm/13" RS-481 N10T N10J N10P A10P n10u n10l

    n10u

    Abstract: n10e A10y N10Y n10q A10P n10Z N10P N10d n10f
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original
    PDF E128662 1000s 10x1000s DO-214AA RS-481 n10u n10e A10y N10Y n10q A10P n10Z N10P N10d n10f

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description Uni-directional Bi-directional The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original
    PDF E128662 DO-214AA tape/13â RS-481

    n10v

    Abstract: n10h n10u a106 diode A10N N10E code A106 n10g n10f n10q
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W RoHS 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


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    PDF 1000s DO-214AA 12mm/13" RS-481 n10v n10h n10u a106 diode A10N N10E code A106 n10g n10f n10q

    N10L16

    Abstract: N10L-16 n10l IPI70N10SL-16 IPB70N10SL-16 IPP70N10SL-16 PG-TO263-3-2 SP0002-25708 SP0002-25700 IPI70
    Text: IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor • N-Channel Product Summary VDS 100 V • Enhancement mode RDS on 16 mΩ • Logic Level ID 70 A Feature • 175°C operating temperature P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 • Avalanche rated


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    PDF IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 IPP70N10SL-16 PG-TO220-3-1 SP0002-25708 N10L16 N10L-16 n10l IPI70N10SL-16 IPB70N10SL-16 IPP70N10SL-16 PG-TO263-3-2 SP0002-25708 SP0002-25700 IPI70

    B10F

    Abstract: n10f A10y A10P A10N 1KSMB12A 1KSMB10A 1KSMB11A n10u A10a
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W RoHS 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


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    PDF E128662 1000s DO-214AA B10F n10f A10y A10P A10N 1KSMB12A 1KSMB10A 1KSMB11A n10u A10a

    GCS9030

    Abstract: STD8N10L 066AA 100VDS
    Text: rz Z ^ 7/ S C S -T H O M S O N IKJDra IILIOT©raDSl STD8 N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss N10L 100 V RDS on < 0.33 Id n % 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STD8N10L STD8N10L O-251) O-252) 0068771-E 07ab3^ O-252 0068772-B 0072b3S GCS9030 066AA 100VDS

    MB81C78A-35

    Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
    Text: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)


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    PDF 28PIN LC3664R/RL-10 LC3664RM/RML-10 64RS/RSL-10 LC36640-70 M5M5165P-70L M5M5178P-35 M5M5178P-45 M5M5178P-55 MB81C78-45 MB81C78A-35 LH5164-10 MB81C78A LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12

    CMOS256K

    Abstract: lh51256l
    Text: • 32,768 x 8 bit organization • Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (T a = -40 to 85°C, minimum cycle) Standby: 5.5 nW (MAX.) (Ta = 0 to 60°C) • • Fully-static operation TTL compatible I/O • Three-state outputs


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    PDF LH51256L 28-pin, 600-mil 450-mil LH51256L LH51256 DIP28-P-600) CMOS256K

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


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    PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP blE » LH51256L FEATURES Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (Ta = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (Ta = 0 to 60°C) DESCRIPTION The LH51256L is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby


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    PDF LH51256L 28-pin, 600-mil 450-mil 28-pin LH51256

    LH51256N10L

    Abstract: N12L LH51256 LH51256N-10L
    Text: LH51256L DESCRIPTION FEATURES • 32,768 x 8 bit organization • Access times: 100/120 ns MAX. • Power consumption: Operating: 248 mW (MAX.) (T a = -40 to 85°C, minimum cycle) (MAX.) (T a = 0 to 60°C) • • Fully-static operation TTL compatible I/O


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    PDF LH51256L 28-pin, 600-mi 450-mil LH51256L 28-pin LH51256 LH51256N10L N12L LH51256 LH51256N-10L

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


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    PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN

    2222LM

    Abstract: 0610LL vn10 N10LM
    Text: T em ic VNlO/0605/0610/2222 Series S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors N10LE N10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber rDSion M a x Q ) VG S(th) (V ) I d M in (A ) VN 10LE 5 @ V Gs = 10 V


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    PDF VNlO/0605/0610/2222 VN10LE VN10LM VN0605T 0610LL 2222LL VN2222LM VN0610LL 2222LM vn10 N10LM

    818l

    Abstract: No abstract text available
    Text: LH51256L DESCRIPTION FEATURES • 32 ,768 x 8 bit organization • Access times: 100/120 ns M AX. • Operating: 248 m W (M AX.) (T a = -40 to 85°C , minimum cycle) (M AX.) (T a = 0 to 60°C ) • Fully static operation • TTL compatible I/O • The LH51256L is a 256K bit static RAM organized


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    PDF LH51256L LH51256L 28-PIN 51256L-1 51256L LH512561- 28-Din. 600-mil DIP28-P-600) 818l

    Untitled

    Abstract: No abstract text available
    Text: CMOS 256K 32K FEATURES • 32,768 x 8 bit organization • Access times: 100/120 ns (MAX. • Power consumption: Operating: 248 mW (MAX.) (T a = -40 to 85°C, minimum cycle) Standby: 5.5 (MAX.) (T a = 0 to 60°C) • Fully static operation • TTL compatible I/O


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    PDF 28-pin, 600-mil 450-mil LH51256L 28-PIN 51256L5 LH51256L LH51256