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    STGW60 Search Results

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    STGW60 Price and Stock

    STMicroelectronics STGW60V60DF

    IGBT 600V 80A 375W TO247
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    DigiKey STGW60V60DF Tube 2,831 1
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    STMicroelectronics STGW60H65DFB

    IGBT TRENCH FS 650V 80A TO247
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    DigiKey STGW60H65DFB Tube 690 1
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    STMicroelectronics STGW60H65DFB-4

    IGBT
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    DigiKey STGW60H65DFB-4 Tube 600 1
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    STMicroelectronics STGW60V60F

    IGBT 600V 80A 375W TO247
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    DigiKey STGW60V60F Tube 591 1
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    Arrow Electronics STGW60V60F 600 15 Weeks 1
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    STMicroelectronics STGW60H65FB

    IGBT TRENCH FS 650V 80A TO247
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    DigiKey STGW60H65FB Tube 453 1
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    STGW60 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STGW60H60DLFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 375W TO-247 Original PDF
    STGW60H65DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 360W TO247 Original PDF
    STGW60H65DFB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO-247 Original PDF
    STGW60H65DFB-4 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF
    STGW60H65DRF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 420W TO247 Original PDF
    STGW60H65F STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 360W TO247 Original PDF
    STGW60H65FB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO247 Original PDF
    STGW60V60DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 375W TO247 Original PDF
    STGW60V60F STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 80A 375W TO247 Original PDF

    STGW60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution


    Original
    PDF STGW60V60F O-247 DocID024701

    GW60H65DFB

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB

    STGW60

    Abstract: gw60 STGWT60H65F 019012 AM-1185 stgw60h65
    Text: STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ 2 Lead free package


    Original
    PDF STGW60H65F STGWT60H65F O-247 STGW60 gw60 STGWT60H65F 019012 AM-1185 stgw60h65

    42-06A

    Abstract: No abstract text available
    Text: STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet - production data Applications • Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction 2  High switching frequency converters


    Original
    PDF STGW60H65DRF O-247 DocID022346 42-06A

    ST IGBT code marking

    Abstract: STGW60H65F GW60H65F
    Text: STGW60H65F 60 A, 650 V field stop trench gate IGBT Preliminary data Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications


    Original
    PDF STGW60H65F O-247 ST IGBT code marking STGW60H65F GW60H65F

    gw60h65drf

    Abstract: STGW60H65DRF ST IGBT code marking schematic diagram welding device mj 340
    Text: STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode


    Original
    PDF STGW60H65DRF O-247 gw60h65drf STGW60H65DRF ST IGBT code marking schematic diagram welding device mj 340

    GW60V60DF

    Abstract: No abstract text available
    Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    PDF STGW60V60DF STGWT60V60DF O-247 DocID024154 GW60V60DF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365

    gw60v60

    Abstract: No abstract text available
    Text: STGW60V60F 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Very high speed switching series • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 2 • Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    PDF STGW60V60F O-247 DocID024701 gw60v60

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65FB STGWT60H65FB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65FB STGWT60H65FB O-247 DocID025187

    Untitled

    Abstract: No abstract text available
    Text: STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.6 V (typ.) @ IC = 60 A


    Original
    PDF STGW60H60DLFB STGWT60H60DLFB O-247 DocID024403

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    PDF STGW60H65DRF O-247

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65F 60 A, 650 V field stop trench gate IGBT Features • Very high speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247


    Original
    PDF STGW60H65F O-247

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65FB STGWT60H65FB O-247 DocID025187

    Untitled

    Abstract: No abstract text available
    Text: STGW60H60DLFB STGWT60H60DLFB 600 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Low saturation voltage: VCE sat = 1.65 V (typ.)


    Original
    PDF STGW60H60DLFB STGWT60H60DLFB O-247 DocID024403

    IGBT 60A

    Abstract: No abstract text available
    Text: STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    PDF STGW60H65DF O-247 IGBT 60A

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DF 60 A, 650 V field stop trench gate IGBT with very fast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    PDF STGW60H65DF O-247

    GW60H65F

    Abstract: STPSC1206D STGW60H65F
    Text: STGW60H65F 60 A, 650 V field stop trench gate IGBT Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Lead free package 2 3 1 Applications TO-247


    Original
    PDF STGW60H65F O-247 GW60H65F STPSC1206D STGW60H65F

    GW60V60DF

    Abstract: gwt60v60df gw60v60
    Text: STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution


    Original
    PDF STGW60V60DF, STGWT60V60DF O-247 DocID024154 GW60V60DF gwt60v60df gw60v60

    GW60V60DF

    Abstract: gwt60v60df
    Text: STGW60V60DF STGWT60V60DF 600 V, 60 A very high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Very high speed switching series  Maximum junction temperature: TJ = 175 °C  Tail-less switching off 2 3 3 2 1 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original
    PDF STGW60V60DF STGWT60V60DF O-247 DocID024154 GW60V60DF gwt60v60df

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW60H65DFB STGWT60H65DFB O-247 DocID024365

    Untitled

    Abstract: No abstract text available
    Text: STGW60H60DLFB STGWT60H60DLFB 600 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current • VCE sat = 1.6 V (typ.) @ IC = 60 A


    Original
    PDF STGW60H60DLFB STGWT60H60DLFB O-247 DocID024403

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original
    PDF STGW60H65DRF O-247