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    STMicroelectronics STGWT60H65FB

    IGBT 650V 80A 375W TO3P-3L
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    Mouser Electronics STGWT60H65FB 297
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    Verical STGWT60H65FB 210 4
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    STMicroelectronics STGWT60H65FB 297 1
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    Quest Components STGWT60H65FB 164
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    TME STGWT60H65FB 1
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    Avnet Silica STGWT60H65FB 16 Weeks 30
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    Chip1Stop STGWT60H65FB 210
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    STGWT60H65F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STGWT60H65FB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 375W TO3P-3L Original PDF

    STGWT60H65F Datasheets Context Search

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    STGW60

    Abstract: gw60 STGWT60H65F 019012 AM-1185 stgw60h65
    Text: STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features • High speed switching ■ Tight parameter distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ 2 Lead free package


    Original     		PDF STGW60H65F STGWT60H65F O-247 STGW60 gw60 STGWT60H65F 019012 AM-1185 stgw60h65

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65FB STGWT60H65FB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65FB STGWT60H65FB O-247 DocID025187

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		PDF STGW60H65FB STGWT60H65FB O-247 DocID025187