GW60H65DFB
Abstract: No abstract text available
Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
GW60H65DFB
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Untitled
Abstract: No abstract text available
Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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Original
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PDF
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
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GW60H65DFB
Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
Text: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current 2 Very low saturation voltage: VCE sat = 1.65 V
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Original
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PDF
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
GW60H65DFB
GWT60H65DFB
fieldstop igbt
GW60
AM01507v1
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Untitled
Abstract: No abstract text available
Text: STGW60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V
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Original
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PDF
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STGW60H65DFB
STGWT60H65DFB
O-247
DocID024365
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