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    STE 9704 Search Results

    STE 9704 Result Highlights (4)

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    70P1338S266RM Renesas Electronics Corporation QDR-II B2 STE, 256K CNTRS Visit Renesas Electronics Corporation
    70P1308S167RMI Renesas Electronics Corporation QDR-II B2 STE, 512K CNTRS Visit Renesas Electronics Corporation
    70P1338S167RM Renesas Electronics Corporation QDR-II B2 STE, 256K CNTRS Visit Renesas Electronics Corporation
    70P1308S166RM Renesas Electronics Corporation QDR-II B2 STE, 512K CNTRS Visit Renesas Electronics Corporation

    STE 9704 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Rudy Severns

    Abstract: mospower applications handbook 3RH1140-1AD00 DE-150 DE-275 DE-375 Directed Energy "mospower applications handbook"
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE The destructive effects of Kelvin leaded packages in high speed, high frequency operation Directed Energy, Inc. • 2401 Research Blvd., Ste 108 • Fort Collins, CO 80526 TEL: 970-493-1901 • FAX: 970-493-1903 • EMAIIL: deiinfo@directedenergy.com • WEB: www.directedenergy.com


    Original     		PDF DE-275 Rudy Severns mospower applications handbook 3RH1140-1AD00 DE-150 DE-375 Directed Energy "mospower applications handbook"

    393 ST

    Abstract: 7358 9753 AZ85234
    Text: SALES REPRESENTATIVES UNITED STATES ARIZONA, NEW MEXICO NEW YORK, CONNETICUT Cain Southwest 131 N. Riata St. Gilbert, AZ 85234 Tel: 480-558-5266 Fax: 480-558-5280 rtkaz@cainsw.com E-Squared Marketing, Inc. 82 Twin Oaks Drive Kings Park, NY 11754 Tel: 631-269-4715/631-544-4788


    Original     		PDF 909-612-izon 393 ST 7358 9753 AZ85234

    12 pulse diode rectifier

    Abstract: GS8DI25104 D-68623 Directed Energy
    Text: GS8DI25104 IDC = 4 A V RRM = 250 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data C1 A2 C2 5. 8. A = Anode, C = Cathode 4. 1. C1 A1 C2 Symbol Conditions Maximum Ratings IFAV IFAV TC = 25°C; DC TC = 90°C; DC


    Original     		PDF GS8DI25104 D-68623 12 pulse diode rectifier GS8DI25104 Directed Energy

    str 5707

    Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification


    Original     		PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703

    D-68623

    Abstract: No abstract text available
    Text: GS150TA25104 GS150TI25104 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25104 Triple Independent 250 250 GS150 TC25104 Triple Common cathode 250 250 GS150 TA25104 Triple Common anode


    Original     		PDF GS150TA25104 GS150TI25104 GS150 TI25104 TC25104 TA25104 GS150TC25104 D-68623

    GS150TA25110

    Abstract: Directed Energy D-68623 TI25110 92000
    Text: GS150TA25110 GS150TI25110 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25110 Triple Independent 250 250 GS150 TC25110 Triple Common cathode 250 250 GS150 TA25110 Triple Common anode


    Original     		PDF GS150TA25110 GS150TI25110 GS150 TI25110 TC25110 TA25110 GS150TC25110 D-68623 GS150TA25110 Directed Energy TI25110 92000

    Untitled

    Abstract: No abstract text available
    Text: FILE PATH/NAME: X:\OtterDesign\1000 Series\1000 REV CO# DESCRIPTION - INITIAL RELEASE A DRAWN BY DATE CHK'D BY DATE TDB 5.24.07 JLJ 5.24.07 BODY LENGTH A 115.98 4.566 STRAP OPENING 3.57 .141 B B C 36.65 Strap 1.443 Opening INT. 59.69 DEPTH 2.350 Dimensions:


    Original     		PDF \OtterDesign\1000 Series\1000 TDB/5-24-07 JLJ/5-24-07

    atmel AT89C52 PROGRAMMER

    Abstract: dataman s4 LEAP-U1 AT89C2051 PROGRAMMING INTERFACE ALL07 UNIVERSAL PROGRAMMER AND TESTER PAC DIP 40 GANGPRO 8 atmel 2051 AT89S53 for proteus labtool 48 at89s8252 Seprog
    Text: Programming Vendors Atmel Corporation works closely with major suppliers of programming equipment that support our family of Flash microcontrollers. Atmel has a program in place which certifies the programming vendors, and a complete list can be found on our Bulletin Board at 408 436-4309. This list will


    Original     		PDF 0515B-A FLEX-700 TUP-400 TUP-51F TUP-51F-PL AT89C52 AT89C2051 AT89C1051 atmel AT89C52 PROGRAMMER dataman s4 LEAP-U1 AT89C2051 PROGRAMMING INTERFACE ALL07 UNIVERSAL PROGRAMMER AND TESTER PAC DIP 40 GANGPRO 8 atmel 2051 AT89S53 for proteus labtool 48 at89s8252 Seprog

    X28C64B

    Abstract: x2444 Application Note XICOR x2004 "BP MICROSYSTEMS" EP-1 allpro 88 x2444 FLEX-700 ALL-07 allpro clk-3100 adapters X2816A
    Text: Application Note AN54 2 E PROM Programmer Vendors for Xicor Devices by Jordon Inkeles, July 1996 The following listing summarizes the most current information available to Xicor regarding external support of our products. Each manufacturer's listing has been condensed in order to provide a legible


    Original     		PDF U84/U40/U32, AN54-4 X28C64B x2444 Application Note XICOR x2004 "BP MICROSYSTEMS" EP-1 allpro 88 x2444 FLEX-700 ALL-07 allpro clk-3100 adapters X2816A

    DEIC420 RF MOSFET Gate Driver IC

    Abstract: 102N06 DEIC420 DE-275 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet DE-375
    Text: EVIC420 DEIC420 High Frequency Gate Driver IC Evaluation Board General Description The EVIC420 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the DEI DEIC420 gate drive IC, as well as to provide a building block


    Original     		PDF EVIC420 DEIC420 EVIC420 EVIC420. DE150 DE-275 DE-375 DE-475 DEIC420 RF MOSFET Gate Driver IC 102N06 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet

    TO-263 5pin Package

    Abstract: IXDD414YI EVDD414 IXDD408 SOT-227 pcb D-68623 EVDD408 IXDD408YI IXDD414 SCHEMATIC WITH IGBTS
    Text: EVDD408 And EVDD414 IXDD408 And IXDD414 Gate Driver IC Evaluation Boards General Description The EVDD408/EVDD414 evaluation boards are generalpurpose circuit boards designed to simplify the evaluation of the IXYS IXDD408 and IXDD414 gate drive ICs, as well as to


    Original     		PDF EVDD408 EVDD414 IXDD408 IXDD414 EVDD408/EVDD414 O-220 O-263) O-263 TO-263 5pin Package IXDD414YI EVDD414 SOT-227 pcb D-68623 IXDD408YI SCHEMATIC WITH IGBTS

    IXDN404

    Abstract: IXDD404 EVDN404 IXDI404PI mosfet driver dip 16 IXDD404PI IXDN404PI SOT-227 pcb EVDD404 IXDI404
    Text: EVDD404 IXDD404, IXDI404 And IXDN404 Gate Driver IC Evaluation Board General Description The EVDD404 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS IXDD404, IXDI404 and IXDN404 gate drive ICs, as well as to


    Original     		PDF EVDD404 IXDD404, IXDI404 IXDN404 EVDD404 SO-16 SI-16) IXDD404 EVDN404 IXDI404PI mosfet driver dip 16 IXDD404PI IXDN404PI SOT-227 pcb

    IXDD404PI

    Abstract: SO 227 Package SOT-227 Package IXDD408SI IXDD408PI ixys mosfet development board pin diagram of MOSFET D-68623 EVDD404 IXDD404
    Text: EVDD404 IXDD404 Gate Driver IC Evaluation Board General Description The EVDD404 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS IXDD404 gate drive IC, as well as to provide a building block for power circuit development. Either the DIP-8 IXDD408PI


    Original     		PDF EVDD404 IXDD404 EVDD404 IXDD408PI) SO-16 IXDD408SI-16) O-220, O-247, O-264 IXDD404PI SO 227 Package SOT-227 Package IXDD408SI IXDD408PI ixys mosfet development board pin diagram of MOSFET D-68623

    IXDD415SI

    Abstract: IXDD415 DE-275 EVDD415 DE275102N06A DE-150 Directed PUSH PULL MOSFET DRIVER DE275 DE275-102N06A
    Text: EVDD415 IXDD415 High Frequency Gate Driver IC Evaluation Board General Description The EVDD415 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS/DEI IXDD415 gate drive IC, as well as to provide a building block


    Original     		PDF EVDD415 IXDD415 EVDD415 IXDD415SI SO-28 EVDD415. DE150 DE-275 DE275102N06A DE-150 Directed PUSH PULL MOSFET DRIVER DE275 DE275-102N06A

    POWER MOSFET Rise Time 1 ns

    Abstract: IXZ4DF18N50 S 170 MOSFET DEIC-515 mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF IXZ318N50 deic 515
    Text: IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver matched to MOSFET 500 Volts 19 A 0.29 Ohms Features • Isolated substrate − high isolation voltage >2500V − excellent thermal transfer


    Original     		PDF IXZ4DF18N50 DEIC-515 IXZ318N50 IXZ4DF18N50 POWER MOSFET Rise Time 1 ns S 170 MOSFET mosfet IDM 200 DEIC515 rf mosfet power amplifier 10UF deic 515

    Ultrafast MOSFET Driver

    Abstract: 408CI
    Text: IXDD408PI / 408SI / 408YI / 408CI 8 Ampere Low-Side Ultrafast MOSFET Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. • Latch Up Protected • High Peak Output Current: 8A Peak • Operates from 4.5V to 25V


    Original     		PDF IXDD408PI 408SI 408YI 408CI 2500pF Edisonstrasse15 D-68623; DS99081 Ultrafast MOSFET Driver 408CI

    IXZ4DF12N100

    Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
    Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original     		PDF IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz

    evld02

    Abstract: IXDD415 DEIC420 SOP-28 thermal DEIC420 RF MOSFET Gate Driver IC IXLD02 SOP28 Package DE-275 EVDD415 SOP28 socket
    Text: DE-Series MOSFET, DEIC420 And SOP-28 IC Device Installation & Mounting Instructions The DE-Series MOSFETs or ICs may be mounted in three different configurations, depending upon the application and power dissipation required. This document refers to MOSFET mounting, however these mounting instructions also apply to


    Original     		PDF DEIC420 OP-28 DE-275 IXDD415 IXLD02 evld02 SOP-28 thermal DEIC420 RF MOSFET Gate Driver IC SOP28 Package EVDD415 SOP28 socket

    IXDN430CI

    Abstract: 10uf 35v IXDD430 IXDD430CI IXDI430MCI IXDD409 IXDS430SI IXDI430 IXDI430CI IXDI409YI
    Text: EVDD430S / EVDD430CY 30A Ultra Fast MOSFET / IGBT Driver Evaluation Boards General Description The EVDD430S / EVDD430CY evaluation boards are general-purpose circuit boards designed to simplify the evaluation of the IXYS IXDS430, IXDD430, IXDI430, and IXDN430 MOSFET / IGBT driver, as well as to provide a


    Original     		PDF EVDD430S EVDD430CY EVDD430CY IXDS430, IXDD430, IXDI430, IXDN430 SOIC-28, O-220, IXDN430CI 10uf 35v IXDD430 IXDD430CI IXDI430MCI IXDD409 IXDS430SI IXDI430 IXDI430CI IXDI409YI

    DIODE BY

    Abstract: TI251
    Text: G S150TA 25120 G S 150TC 25120 G S 150TI25120 Gallium Arsenide Schottky Rectifier I dc Isolated Surface Mount Package Type Part Number GS150 TI25120 Triple Independent 2 » } 250 GS150 TC25120 Triple Common cathode 250 250 GS150 TA25120 Triple Common anode


    OCR Scan     		PDF GS150TA25120 GS150TI25120 GS150TC25120 GS150 TI25120 TC25120 TA25120 DIODE BY TI251

    FZH 261

    Abstract: FZH 181 gal 16v8 programming algorithm FZH 201 VP16V8E-25 FZL 111 VP16V8 VP16V8EPC fzl 181
    Text: I V L S I V P 1 6 V 8E TECHNOLOGY INC _72 D E =1300347 ODOD4QS b Ò T -4 lt'l3 47 PRELIMINARY GENERIC ARRAY LOGIC FEATURES • Replaces all series 20 bipolar PAL* devices — Output Drive 24 mA IOL • High performance CMOS technology Low Power: 90 mA Max Active


    OCR Scan     		PDF

    VP16V8

    Abstract: VP20V8 VP20V8E-25 VP16V8E VP20V8E-35 ST 6395 BI VP16V8E-25 VP20V8E 16H8 gal programming algorithm
    Text: VP16V8E • VP20V8E € GENERIC ARRAY LOGIC FEATURES • VP16V8E replaces most 20-pin bipolar PAL devices • Power-on reset for all registers • High-speed programming algorithm • VP20V8E replaces most 24-pin bipolar PAL devices • JEDEC approved TTL compatible


    OCR Scan     		PDF VP16V8E VP20V8E VP16V8E 20-pin VP20V8E 24-pin 8100-046-a-23-036 VP16V8 VP20V8 VP20V8E-25 VP20V8E-35 ST 6395 BI VP16V8E-25 16H8 gal programming algorithm

    22v10q

    Abstract: BD008400 CE22V10Q pal 22v10Q
    Text: -7 .Z o PALCE22V10Q-25 24-Pin E2 CMOS Programmable Array Logic PAL •0 > DISTINCTIVE CHARACTERISTICS E lectrically Erasable (E2) device using A M D 's advanced C M O S EEPROM te ch n olo gy R eprogram m able ce lls a llow AC and DC testing to be perform ed at th e fa cto ry


    OCR Scan     		PDF PALCE22V10Q-25 24-Pin 25-ns 22v10q BD008400 CE22V10Q pal 22v10Q

    Untitled

    Abstract: No abstract text available
    Text: 12 11 9 10 7 8 Ï 6 4 5 SYMBOL D E F I N I T I O N THE NUMBER INSIDE THE SYMBOL Cl CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER H G 3 M IS S IN G NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 5 LAST NO. USED 6 DWG STATUS DATE ZONE


    OCR Scan     		PDF 17AU00 ASTM2600 CDA-260