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    STB60 Search Results

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    STB60 Price and Stock

    Rochester Electronics LLC STB60N06HDT4

    RF MOSFET 60V D2PAK
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    DigiKey STB60N06HDT4 Bulk 14,400 293
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    SMC Diode Solutions STB60100C

    DIODE ARRAY SCHOTT 100V D2PAK
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    DigiKey STB60100C Reel 4,800 800
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    onsemi NSTB60BDW1T1G

    TRANS PREBIAS 1NPN 1PNP 50V SC88
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    DigiKey NSTB60BDW1T1G Reel 3,000 3,000
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    STMicroelectronics STB60NF06T4

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey STB60NF06T4 Reel 1,655 1,000
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    STB60NF06T4 Digi-Reel 1
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    Mouser Electronics STB60NF06T4 4,627
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    Newark STB60NF06T4 Reel 1,000
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    STMicroelectronics STB60NF06T4 4,623 1
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    STMicroelectronics STB60NF06LT4

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey STB60NF06LT4 Reel 1,000 1,000
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    Mouser Electronics STB60NF06LT4 19,148
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    Newark STB60NF06LT4 Cut Tape 7,412 1
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    STB60NF06LT4 Reel 1,000
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    STMicroelectronics STB60NF06LT4 18,873 1
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    Quest Components STB60NF06LT4 181
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    STB60NF06LT4 146
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    Avnet Silica STB60NF06LT4 17 Weeks 1,000
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    Win Source Electronics STB60NF06LT4 25,888
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    Find more STB60 price and stock on Findchips.com

    STB60 Datasheets (136)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STB6000 STMicroelectronics QPSK DVB/DIRECTVTM DIRECT CONVERSION TUNER IC STB6000 Original PDF
    STB6010 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6010 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB60100CTR SMC Diode Solutions Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTTKY 100V D2PAK Original PDF
    STB6011 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6012 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6013 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6015 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6015 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6016 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6016 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6018 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6020 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6022 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6024 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6027 EIC Semiconductor SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Original PDF
    STB6027 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6030 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6033 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    STB6036 EIC Semiconductor Transient Voltage Suppressor Diodes Original PDF
    ...

    STB60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STB60NE06L-16

    Abstract: No abstract text available
    Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STB60NE06L-16 O-263) STB60NE06L-16

    STB60NF03L

    Abstract: No abstract text available
    Text: STB60NF03L N-CHANNEL 30V - 0.008Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF03L • ■ VDSS RDS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature


    Original     		PDF STB60NF03L STB60NF03L

    b60nf06

    Abstract: B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368
    Text: STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NF06-1 60V <0.016Ω 60A STB60NF06 60V <0.016Ω 60 3 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		PDF STB60NF06 STB60NF06-1 b60nf06 B60NF JESD97 STB60NF06 STB60NF06-1 STB60NF06T4 diode k 0368

    B60NE06L

    Abstract: B60NE06L-16 b60ne
    Text: STB60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY


    Original     		PDF STB60NE06L-16 B60NE06L-16 175oC O-263 B60NE06L B60NE06L-16 b60ne

    STB6000

    Abstract: stv0299 application STV0299 QFN-32 bpsk QFN32Pin ST omega
    Text: STB6000 QPSK DVB/DIRECTVTM direct conversion tuner IC DATA BRIEF Description satellite front end that can seamlessly interface to ST’s OMEGA range of set-top box decoders. Packaged in a small QFN 32-pin package, it is ideal for low cost DBS design. The STB6000 ASIC is a highly integrated, low


    Original     		PDF STB6000 32-pin STB6000 stv0299 application STV0299 QFN-32 bpsk QFN32Pin ST omega

    STB60NE06L-16

    Abstract: No abstract text available
    Text: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STB60NE06L-16 O-263) STB60NE06L-16

    STB60NE03L-12

    Abstract: No abstract text available
    Text: STB60NE03L-12 N-CHANNEL 30V - 0.009 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS R DS on ID STB60NE03L-12 30 V <0.012 Ω 60 A TYPICAL RDS(on) = 0.009 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STB60NE03L-12 STB60NE03L-12

    b60ne

    Abstract: B60NE06L STB60NE06L-16T4 B60NE06
    Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		PDF STB60NE06L-16 STB60NE06L-16T4erein b60ne B60NE06L STB60NE06L-16T4 B60NE06

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS STB60100C-A Technical Data Data Sheet N1620, Rev. - Green Products STB60100C-A SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • •


    Original     		PDF STB60100C-A N1620, STB60100C-A AEC-Q101

    B60NE06L

    Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
    Text: STB60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STB60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		PDF STB60NE06L-16 B60NE06L b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4

    60N55F3

    Abstract: No abstract text available
    Text: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ


    Original     		PDF STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 O-220 O-220FP STB60N55F3 STD60N55F3 60N55F3

    P60NF10

    Abstract: P60NF
    Text: STB60NF10 STB60NF10-1 - STP60NF10 N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB60NF10 100V <0.023Ω 80A STB60NF10-1 100V <0.023Ω 80A STP60NF10 100V <0.023Ω 80A 3


    Original     		PDF STB60NF10 STB60NF10-1 STP60NF10 O-220 STB60NF10-1 O-220 P60NF10 P60NF

    STB60NF03L

    Abstract: No abstract text available
    Text: STB60NF03L  N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE STB60NF03L • ■ ■ ■ V DSS R DS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE


    Original     		PDF STB60NF03L O-263 STB60NF03L

    60N55F3

    Abstract: STI60N55F3 STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 60N55
    Text: STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ


    Original     		PDF STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 O-220 O-220FP STB60N55F3 STD60N55F3 60N55F3 STI60N55F3 STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 60N55

    B60N06

    Abstract: DD 127 D TRANSISTOR b60n06-14 D2PACK transistor DD 127 D STB60N06-14
    Text: STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STB60N06-14 B60N06-14 100oC O-262) O-263) O-262 B60N06 DD 127 D TRANSISTOR b60n06-14 D2PACK transistor DD 127 D STB60N06-14

    320 5400

    Abstract: STB60NE03L-10 b60ne airbag
    Text: STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET T YPE V DSS R DS o n ID ST B60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		PDF STB60NE03L-10 B60NE03L-10 O-263 320 5400 STB60NE03L-10 b60ne airbag

    STB60NE03L-10

    Abstract: No abstract text available
    Text: STB60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STB60NE03L-10 30 V < 0.010 Ω 60 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.007 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC


    Original     		PDF STB60NE03L-10 O-263 STB60NE03L-10

    STB60N55F3

    Abstract: STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 275 L20
    Text: STB60N55F3 - STD60N55F3 - STF60N55F3 STP60N55F3 - STU60N55F3 N-channel 55V - 6.5mΩ - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET Power MOSFET General features Type VDSS RDS on ID Pw STB60N55F3 55V <8.5mΩ 80A 110W STD60N55F3 55V <8.5mΩ 80A 110W


    Original     		PDF STB60N55F3 STD60N55F3 STF60N55F3 STP60N55F3 STU60N55F3 O-220/FP STB60N55F3 STD60N55F3 STP60N55F3 STF60N55F3 STU60N55F3 275 L20

    DD 127 D TRANSISTOR

    Abstract: STB60N06-14 D2PACK STB60N06
    Text: STB60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STB60N06-14 100oC O-262) O-263) O-262 DD 127 D TRANSISTOR STB60N06-14 D2PACK STB60N06

    STB60

    Abstract: No abstract text available
    Text: STB60NE06L-16  N - CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE V DSS R DS on ID STB60NE06L-16 60 V < 0.16 Ω 60 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF STB60NE06L-16 STB60

    schematic diagram 48v UPS

    Abstract: schematic diagram 24v UPS schematic diagram 48V telecom ups STB60NF06
    Text: STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 • ■ ■ ■ ■ VDSS RDS on ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STB60NF06 schematic diagram 48v UPS schematic diagram 24v UPS schematic diagram 48V telecom ups STB60NF06

    Untitled

    Abstract: No abstract text available
    Text: STB60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T B 6 0 N E 0 6 L -1 6 60 V < 0 .0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		PDF STB60NE06L-16 AT100Â O-263

    Untitled

    Abstract: No abstract text available
    Text: STB60NF03L N-CHANNEL 30V - 0.008 Q. - 60A D2PAK _ STripFET POWER MOSFET PRELIMINARY DATA TYP E S TB60N F03L V d ss R dS oii Id 30 V < 0.01 Q. 60 A • TYPICAL R D S (on) = 0.008 . OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS . LOW THRESHOLD DRIVE


    OCR Scan     		PDF STB60NF03L TB60N O-263 P011P6/E

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ÍIJCTIMfflO STB60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STB60N06-14 dss 60 V Id R D S o n < 0.014 n 60 A TYPICAL R DS(on) =0.012 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STB60N06-14 O-262) O-263) cl2ci237 O-263