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    STMicroelectronics STB60NE06L-16T4

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey STB60NE06L-16T4 Reel 1,000
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    STMicroelectronics STB60NE06L16T4

    N-CHANNEL 60V-0.014 OHM-60A-D2PAK STRIPFET II POWER MOSFET Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA STB60NE06L16T4 7,710
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    B60NE06 Datasheets Context Search

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    B60NE06L

    Abstract: B60NE06L-16 b60ne
    Text: B60NE06L-16  N - CHANNEL 60V - 0.014 Ω - 60A - D2PAK ”SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST B60NE06L-16 60 V <0.016 Ω 60 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.014 Ω AVALANCE RUGGED TECHNOLOGY


    Original     		PDF STB60NE06L-16 B60NE06L-16 175oC O-263 B60NE06L B60NE06L-16 b60ne

    b60ne

    Abstract: B60NE06L STB60NE06L-16T4 B60NE06
    Text: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		PDF STB60NE06L-16 STB60NE06L-16T4erein b60ne B60NE06L STB60NE06L-16T4 B60NE06

    B60NE06L

    Abstract: b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4
    Text: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A • Avalanche rugged technology ■ High current capability ■ Low gate charge ■ 175 °C operating temperature


    Original     		PDF STB60NE06L-16 B60NE06L b60ne JESD97 STB60NE06L-16 STB60NE06L-16T4

    b60ne

    Abstract: B60NE06L
    Text: B60NE06L-16 N-channel 60V - 0.014Ω - 60A - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID B60NE06L-16 60V <0.016Ω 60A ) s ( t c u d o ) r s ( P t c e t u Description e d l o o r s P b Internal schematic diagram e O t e l )


    Original     		PDF STB60NE06L-16 STB60NE06L-16 b60ne B60NE06L