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    B60N06 Search Results

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    B60N06 Price and Stock

    Rochester Electronics LLC STB60N06HDT4

    RF MOSFET 60V D2PAK
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    DigiKey STB60N06HDT4 Bulk 12,000 293
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    Flip Electronics NTB60N06T4G

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey NTB60N06T4G Reel 7,200 200
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    onsemi NTB60N06L

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey NTB60N06L Tube 500
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    onsemi NTB60N06G

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey NTB60N06G Tube 500
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    onsemi NTB60N06LG

    MOSFET N-CH 60V 60A D2PAK
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    DigiKey NTB60N06LG Tube
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    B60N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B60N06

    Abstract: DD 127 D TRANSISTOR b60n06-14 D2PACK transistor DD 127 D STB60N06-14
    Text: B60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.014 Ω 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STB60N06-14 B60N06-14 100oC O-262) O-263) O-262 B60N06 DD 127 D TRANSISTOR b60n06-14 D2PACK transistor DD 127 D STB60N06-14

    L9380

    Abstract: L9380-TR SO20 U405
    Text: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1


    Original     		PDF L9380 L9380 L9380-TR L9380-TR SO20 U405

    B60N06

    Abstract: b60 n06 MTB60N06J3 N06 MOSFET
    Text: CYStech Electronics Corp. Spec. No. : C708J3 Issued Date : 2009.04.29 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET B60N06J3 BVDSS 60V ID 12A RDSON MAX 60mΩ Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package


    Original     		PDF C708J3 MTB60N06J3 O-252 UL94V-0 B60N06 b60 n06 MTB60N06J3 N06 MOSFET

    L9380

    Abstract: L9380-TR SO20 L9380-TR-LF B60N06
    Text: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1


    Original     		PDF L9380 L9380 L9380-TR L9380-LF L9380-TR SO20 L9380-TR-LF B60N06

    B60N06

    Abstract: L9380 SO20 charge pump mosfet driver external
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION


    Original     		PDF L9380 L9380 B60N06 SO20 charge pump mosfet driver external

    L9380

    Abstract: SO20 voltage comparator IC 5 pin B60N06
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION FOR CHANNEL 1 AND 2


    Original     		PDF L9380 L9380 SO20 voltage comparator IC 5 pin B60N06

    B60N06

    Abstract: SMB7W01-200
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • ■ ■ ■ ■ ■ OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION


    Original     		PDF L9380 L9380 D98AT391 L9380-TR B60N06 SMB7W01-200

    Untitled

    Abstract: No abstract text available
    Text: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1


    Original     		PDF L9380 L9380 L9380-TR L9380-LF

    Untitled

    Abstract: No abstract text available
    Text: L9380 Triple high-side MOSFET driver Features • Overvoltage charge pump shut off ■ For VS > 25 V ■ Reverse battery protection referring to the application circuit diagram ■ Programmable overload protection function for channel 1 and 2 ■ Open ground protection function for channel 1


    Original     		PDF L9380 L9380 L9380-TR L9380-LF

    B60N06

    Abstract: L9380 SO20
    Text: L9380 TRIPLE HIGH-SIDE MOSFET DRIVER OVERVOLTAGE CHARGE PUMP SHUT OFF FOR VVS > 25V REVERSE BATTERY PROTECTION REFERRING TO THE APPLICATION CIRCUIT DIAGRAM PROGRAMMABLE OVERLOAD PROTECTION FUNCTION FOR CHANNEL 1 AND 2 OPEN GROUND PROTECTION FUNCTION FOR CHANNEL 1 AND 2


    Original     		PDF L9380 L9380 B60N06 SO20

    bma 023

    Abstract: SUB60N06-14 SUP60N06-14
    Text: T e m ic SUP/B60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) 60 0.014 : I d (A) 60a T0-220AB o TO-263 o D R A IN con n ected to TAB n G D S Top View GD Ò S S SU B60N06-14


    OCR Scan     		PDF sup/sub60n06-14 O-220AB SUP60N06-14 O-263 SUB60N06-14 O-220AB O-263) O-263 A554735 bma 023 SUB60N06-14 SUP60N06-14