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    SRAM 8T Search Results

    SRAM 8T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    SRAM 8T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    23K256

    Abstract: 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi
    Text: Serial SRAM Memory Serial SRAM Memory Family www.microchip.com/SRAM Serial SRAM Memory Do you need more RAM in your application? Does it need to be small, cheap, fast and low power? Are you completing a design and need just a little more volatile memory? Do you need a simple, inexpensive way to add RAM without


    Original     		PDF R60-4-227-8870 DS22127A DS22127A* 23K256 8631 23A256 23K640 256 kbyte Low Power Serial SRAM 6166 ram pic with spi

    K7D803671B

    Abstract: K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33
    Text: K7D803671B K7D801871B Preliminary 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History -Initial document. Draft Data July. 2000 Remark Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance


    Original     		PDF K7D803671B K7D801871B 256Kx36 512Kx18 -HC16 012MAX K7D803671B K7D801871B-HC25 K7D801871B-HC30 K7D801871B-HC33 K7D803671B-HC25 K7D803671B-HC30 K7D803671B-HC33

    k7d161888m-hc33

    Abstract: fcBGA PACKAGE thermal resistance SRAM 8T
    Text: K7D163688M K7D161888M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History Initial document. Draft Data October. 2000 Remark Advance Rev. 0.1 Add-HC37 part Part Number, Idd, AC Characteristics April. 2001


    Original     		PDF K7D163688M K7D161888M 512Kx36 1Mx18 Add-HC37 27x16 k7d161888m-hc33 fcBGA PACKAGE thermal resistance SRAM 8T

    CIRCUIT SCHEMATIC CAR ECU

    Abstract: SF126 ADUC7030 ADuC703x DDI0029G, ARM7TDMI Technical Reference Manual DDI0029G LSB16 adi please confirm the manufacturing date from the serial number recorded on the product
    Text: Integrated Precision Battery Sensor For Automotive ADuC7030/ADuC7033 Preliminary Technical Data FEATURES Memory 32 kbytes Flash/EE memory, 4 kbytes SRAM ADuC7030 96 kbytes Flash/EE memory, 6 kbytes SRAM (ADuC7033) 10 kcycles Flash/EE endurance, 20 years Flash/EE retention


    Original     		PDF ADuC7030/ADuC7033 ADuC7030) ADuC7033) MS-026-BBC 48-Lead ST-48) PR05994-0-10/06 CIRCUIT SCHEMATIC CAR ECU SF126 ADUC7030 ADuC703x DDI0029G, ARM7TDMI Technical Reference Manual DDI0029G LSB16 adi please confirm the manufacturing date from the serial number recorded on the product

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 128Kx36 & 256Kx18 SRAM KM736S4017 KM718S4017 Document Title 4M DDR SYNCHRONOUS SRAM Revision History Rev. No. Rev. 0.0 Rev.0.5 History Initial document. Correction on the miss print and the package size. -1- Draft Data Remark Aug. 1998 Advance July. 1999


    Original     		PDF KM736S4017 KM718S4017 128Kx36 256Kx18 128Kx36

    K7D163671B-HC33

    Abstract: K7D163671B-HC37 K7D161871B-HC30
    Text: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 512Kx36 1Mx18 K7D163671B K7D161871B Bin-40 012MAX K7D163671B-HC33 K7D163671B-HC37 K7D161871B-HC30

    K7D801871B-HC30

    Abstract: 5G13
    Text: Advance 256Kx36 & 512Kx18 SRAM K7D803671C K7D801871C Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. May 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 256Kx36 512Kx18 K7D803671C K7D801871C Bin-40 012MAX K7D801871B-HC30 5G13

    78H15

    Abstract: No abstract text available
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 IDD37 800mA 78H15

    hc40 3p

    Abstract: K7D161871M-HC40 tkxc 153-FCBGA-1422
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 27x16 hc40 3p K7D161871M-HC40 tkxc 153-FCBGA-1422

    ARM7TDMI Technical Reference Manual

    Abstract: ADUC7033 cd4580 psm 125 adi please confirm the manufacturing date from the serial number recorded on the product RBU AF
    Text: Integrated Precision Battery Sensor For Automotive ADuC7030/ADuC7033 Preliminary Technical Data FEATURES Memory 32 kbytes Flash/EE memory, 4 kbytes SRAM ADuC7030 96 kbytes Flash/EE memory, 6 kbytes SRAM (ADuC7033) 10 kcycles Flash/EE endurance, 20 years Flash/EE retention


    Original     		PDF 16-bit 16-/32-bit debu23/2009 ADUC7033BSTZ8L-RL EVALADUC7033QSPZ ARM7TDMI Technical Reference Manual ADUC7033 cd4580 psm 125 adi please confirm the manufacturing date from the serial number recorded on the product RBU AF

    K7D161871M-HC40

    Abstract: r1250 535BB1
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 27x16 K7D161871M-HC40 r1250 535BB1

    KM718S4017H-44

    Abstract: KM718S4017H-5
    Text: KM736S4017 KM718S4017 128Kx36 & 256Kx18 SRAM Document Title 4M DDR SYNCHRONOUS SRAM Revision History Rev. No. Rev. 0.0 History Initial document. Draft Data Remark Aug. 1998 Advance Rev.0.5 Correction on the miss print and the package size. July. 1999 Preliminary


    Original     		PDF KM736S4017 KM718S4017 128Kx36 256Kx18 500Mbps) 128Kx36 KM718S4017H-44 KM718S4017H-5

    K7D803671B-HC33

    Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
    Text: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2


    Original     		PDF K7D803671B K7D801871B 256Kx36 512Kx18 -HC16 012MAX K7D803671B-HC33 K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37

    K7D161871B-HC30

    Abstract: K7D163671B-HC33 K7D163671B-HC37
    Text: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 512Kx36 1Mx18 K7D163671B K7D161871B Bin-40 012MAX K7D161871B-HC30 K7D163671B-HC33 K7D163671B-HC37

    PSD321

    Abstract: No abstract text available
    Text: µPSD321X Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM FEATURES SUMMARY The µPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD321X Devices of Flash PSDs feature dual banks of Flash memory, SRAM, general


    Original     		PDF PSD321X 16Kbit PSD321X 16-bit 64KByte 16KByte PSD321

    8D-18

    Abstract: K7D801871B-HC30
    Text: Advance 256Kx36 & 512Kx18 SRAM K7D803671C K7D801871C Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. May 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 256Kx36 512Kx18 K7D803671C K7D801871C Bin-40 012MAX 8D-18 K7D801871B-HC30

    Untitled

    Abstract: No abstract text available
    Text: µPSD325X Flash Programmable System Devices with 8032 Microcontroller Core and 256Kbit SRAM FEATURES SUMMARY • The µPSD325X devices combine a Flash PSD architecture with an 8032 microcontroller core. The µPSD325X devices of Flash PSDs feature dual banks of Flash memory, SRAM, general


    Original     		PDF PSD325X 256Kbit PSD325X 16-bit 32KByte 52-lead,

    Untitled

    Abstract: No abstract text available
    Text: ^ AUSTIN SEMICONDUCTOR, INC. SRAM 256K x 1 SRAM 256K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88725, -88544 • MIL-STD-883, Class B • Radiation tolerant (consult factory) 24- Pin DIP FEATURES • • • • •


    OCR Scan     		PDF MIL-STD-883, MT5C2561 TQ02117

    S4k marking

    Abstract: 64K X 4 SRAM
    Text: •71T5Q2564 883C ri « -1 SRAM M ' S f I !\ Sf- !VIif r >\j J •< ! f »N IN< SRAM 64K x 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS ■ PIN ASSIGNMENT Top View) • SM D 5962-88545, SM D 5962-88681 • M IL-STD -883 FEATURES 24-Pin DIP (D-9) • • •


    OCR Scan     		PDF 71T5Q2564 24-Pin 28-Pin MT5C2564 DS000024 S4k marking 64K X 4 SRAM

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH 50V SF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is


    OCR Scan     		PDF TH50VSF0320/0321BCXB SF0320/0321BCXB 576-bit 608bit 48-pin P-BGA48-1012-1 TH50VSF0320/0321

    sharp mask rom

    Abstract: No abstract text available
    Text: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH


    OCR Scan     		PDF LR-S13011 LR-S1302 LR-S1304 LR-S1303 LR-S1313 LR-S1306 LR-S1305A LR-S1307 56FBGA 72FBGA sharp mask rom

    Untitled

    Abstract: No abstract text available
    Text: A U S T I N S I M U O N D I ! O H . INC. MILITARY SRAM M T 5 C 6 4 0 4 883C I6K X 4 SRAM 16K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SM D 5962-86859, -89692 • M IL-STD -883, Class B • Radiation tolerant (consult factor)')


    OCR Scan     		PDF 22-Pin MIL-STD-883 MTSCM04

    TN-58-11

    Abstract: 18B-3
    Text: |V |IC =R O N 64K SYNCHRONOUS SRAM M T5 8LC 64K 16/18B3 16/18 SY N C B U R S T SRAM X 64Kx 16/18 SRAM FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and 11ns Fast OE# access time: 5ns Single +3.3V +10%/-5% pow er supply


    OCR Scan     		PDF 16/18B3 100-lead MT58LC64K16/13B3 TN-58-11 18B-3

    Untitled

    Abstract: No abstract text available
    Text: ASi? MT5C6404 883C 16K x 4 SRAM A U S T I N S E M I C O N D U C T O R , INC. 16K X 4 SRAM SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-86859, 5962-89692 • M IL-STD -883 22-Pin DIP FEATURES • H ig h sp eed : 1 2 ,15, 2 0 ,2 5 and 35ns


    OCR Scan     		PDF MT5C6404 22-Pin MT5C640* DS000004 RQQ2117