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    IBM0418A8ACLAB

    Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
    Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A4ACLAB IBM0436A8ACLAB IBM0418A8ACLAB IBM0436A4ACLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlh3320 IBM0418A8ACLAB IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB

    K7D803671B-HC33

    Abstract: K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37
    Text: K7D803671B K7D801871B 256Kx36 & 512Kx18 SRAM Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 -Initial document. July. 2000 Advance Rev. 0.1 -ZQ tolerance changed from 10% to 15% Aug. 2000 Advance Rev. 0.2


    Original     		PDF K7D803671B K7D801871B 256Kx36 512Kx18 -HC16 012MAX K7D803671B-HC33 K7D803671B-HC30 K7D801871B-HC35 K7D801871B-HC37 K7D803671B K7D803671B-HC25 K7D803671B-HC35 K7D803671B-HC37

    CXK77Q18B80AGB

    Abstract: CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33
    Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36B80AGB CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q18B80AGB 640mA 600mA CXK77Q36B80AGB-28 CXK77Q36B80AGB-33

    K7D163674B

    Abstract: No abstract text available
    Text: K7D163674B K7D161874B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.


    Original     		PDF K7D163674B K7D161874B 512Kx36 1Mx18 012MAX

    SRAM 8T

    Abstract: No abstract text available
    Text: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7D323674C K7D321874C 1Mx36 2Mx18 153BGA 012MAX SRAM 8T

    K7D161871B-HC30

    Abstract: K7D163671B-HC33 K7D163671B-HC37
    Text: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 512Kx36 1Mx18 K7D163671B K7D161871B Bin-40 012MAX K7D161871B-HC30 K7D163671B-HC33 K7D163671B-HC37

    78H15

    Abstract: No abstract text available
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 IDD37 800mA 78H15

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36B160GB 16Mb LW LS R-R HSTL High Speed Synchronous SRAM 512K x 36 28/33/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77Q36B160GB CXK77Q36B160GB IDD-33

    TSMC single port sram

    Abstract: No abstract text available
    Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input


    Original     		PDF CXK77Q36B80AGB CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q18B80AGB 640mA 600mA TSMC single port sram

    hc40 3p

    Abstract: K7D161871M-HC40 tkxc 153-FCBGA-1422
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 27x16 hc40 3p K7D161871M-HC40 tkxc 153-FCBGA-1422

    K7D161871M-HC40

    Abstract: r1250 535BB1
    Text: K7D163671M K7D161871M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. March. 1999 Advance Rev. 0.1 Addition of New speed bin -25 New part number from KM736FS16017 to K7D163671M


    Original     		PDF K7D163671M K7D161871M 512Kx36 1Mx18 KM736FS16017 -HC25 Add-HC37 27x16 K7D161871M-HC40 r1250 535BB1

    153BGA

    Abstract: K7D321874C
    Text: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 32Mb C-die DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7D323674C K7D321874C 1Mx36 2Mx18 153BGA 012MAX K7D321874C

    jtag samsung

    Abstract: CQ 20.000 K7D321874A K7D323674A U/25/20/TN26/15/850/SAMSUNG SRAM
    Text: K7D323674A K7D321874A 1Mx36 & 2Mx18 SRAM 32Mb A-die DDR SRAM Specification 153FCBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7D323674A K7D321874A 1Mx36 2Mx18 153FCBGA jtag samsung CQ 20.000 K7D321874A K7D323674A U/25/20/TN26/15/850/SAMSUNG SRAM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7D323674C K7D321874C 1Mx36 2Mx18 153BGA 012MAX

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK77Q36B160GB 16Mb LW R-R HSTL High Speed Synchronous SRAM 512K x 36 Organization 28/33/37/4 Preliminary Description The CXK77Q36B160GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77Q36B160GB CXK77Q36B160GB 830mA 930mA IDD-28 700mA 840mA IDD-33 640mA 780mA

    Untitled

    Abstract: No abstract text available
    Text: K7D323674C K7D321874C 1Mx36 & 2Mx18 SRAM 36Mb DDR SRAM Specification 153BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K7D323674C K7D321874C 1Mx36 2Mx18 153BGA 012MAX

    k7d163674b-hc33

    Abstract: K7D163674B K7D161874B-HC27 K7D161874B-HC30 K7D161874B-HC33 K7D161874B-HC37 K7D163674
    Text: Advance 512Kx36 & 1Mx18 SRAM K7D163674B K7D161874B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Oct. 2003 Advance Rev. 0.1 Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items.


    Original     		PDF 512Kx36 1Mx18 K7D163674B K7D161874B 012MAX k7d163674b-hc33 K7D163674B K7D161874B-HC27 K7D161874B-HC30 K7D161874B-HC33 K7D161874B-HC37 K7D163674

    K7D161871B-HC30

    Abstract: K7D161871B-HC40 K7D163671B-HC33 K7D163671B-HC37 K7D163671B-HC40
    Text: Advance K7D163671B K7D161871B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K7D163671B K7D161871B 512Kx36 1Mx18 K7D16366 012MAX K7D161871B-HC30 K7D161871B-HC40 K7D163671B-HC33 K7D163671B-HC37 K7D163671B-HC40

    K7D163671B-HC33

    Abstract: K7D163671B-HC37 K7D161871B-HC30
    Text: Advance 512Kx36 & 1Mx18 SRAM K7D163671B K7D161871B Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 512Kx36 1Mx18 K7D163671B K7D161871B Bin-40 012MAX K7D163671B-HC33 K7D163671B-HC37 K7D161871B-HC30

    CXK77P36R80GB

    Abstract: CXK77P36R80GB-33 CXK77P36R80GB-37 CXK77P36R80GB-4A
    Text: SONY CXK77P36R80GB 8Mb LW R-R HSTL High Speed Synchronous SRAM 256K x 36 33/37/4 Preliminary Description The CXK77P36R80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer


    Original     		PDF CXK77P36R80GB CXK77P36R80GB -100uA IDD-37 680mA CXK77P36R80GB-33 CXK77P36R80GB-37 CXK77P36R80GB-4A

    K7D801871B-HC30

    Abstract: 5G13
    Text: Advance 256Kx36 & 512Kx18 SRAM K7D803671C K7D801871C Document Title 8M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. May 2003 Advance Rev. 0.1 Change AC CHARACTERISTICS -Remove Bin-40 -Data Setup time -33 : 0.25 -> 0.3


    Original     		PDF 256Kx36 512Kx18 K7D803671C K7D801871C Bin-40 012MAX K7D801871B-HC30 5G13

    k7d161888m-hc33

    Abstract: fcBGA PACKAGE thermal resistance SRAM 8T
    Text: K7D163688M K7D161888M 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. Rev. 0.0 History Initial document. Draft Data October. 2000 Remark Advance Rev. 0.1 Add-HC37 part Part Number, Idd, AC Characteristics April. 2001


    Original     		PDF K7D163688M K7D161888M 512Kx36 1Mx18 Add-HC37 27x16 k7d161888m-hc33 fcBGA PACKAGE thermal resistance SRAM 8T

    2f 1001

    Abstract: CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q36B80AGB-28 CXK77Q36B80AGB-33 sony tsmc
    Text: SONY CXK77Q36B80AGB / CXK77Q18B80AGB 28/33/37/4 8Mb LW LS R-R HSTL High Speed Synchronous SRAMs 256K x 36 or 512K x 18 Preliminary Description The CXK77Q36B80AGB (organized as 262,144 words by 36 bits) and the CXK77Q18B80AGB (organized as 524,288 words


    Original     		PDF CXK77Q36B80AGB CXK77Q18B80AGB CXK77Q36B80AGB CXK77Q18B80AGB IDD-28 IDD-33 830mA 750mA 740mA 700mA 2f 1001 CXK77Q36B80AGB-28 CXK77Q36B80AGB-33 sony tsmc

    Untitled

    Abstract: No abstract text available
    Text: TEKELEC COMPONENTS bflE •iDD37fl7 OOOD1MÜ S7fl J> DOUBLE BALANCED MIXERS Modeln* Package Type F56ÓS2 Flat Pack BMH 160 TO 4011 TO 8 T 0 8 -1 4 4 Frequency range RF LO 15 - 1500 MHz IF DC - 1500 MHz LO Level 3 dBm Temperature range - 5 5 / 100'C min max


    OCR Scan     		PDF iDD37fl7 F56682